DMP21D0UFB 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max BVDSS RDS(ON) Max @ TA = +25C (Note 5) -20V 495m @ VGS = -4.5V -0.77A 690m @ VGS = -2.5V -0.67A 960m @ VGS = -1.8V -0.57A Footprint of Just 0.6mm2 – Thirteen Times Smaller Than SOT23 Low Gate Threshold Voltage Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) ESD Protected Gate 3kV Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Portable Electronics Case: X1-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) D G S D G Gate Protection Diode ESD PROTECTED TO 3kV Top View Internal Schematic Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMP21D0UFB-7B Notes: Case X1-DFN1006-3 Packaging 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information X1-DFN1006-3 NG NG = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMP21D0UFB Datasheet Number: DS35277 Rev. 4 - 2 1 of 7 www.diodes.com June 2017 © Diodes Incorporated DMP21D0UFB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Steady State VGS=-4.5V Continuous Drain Current TA = +25°C (Note 5) TA = +85°C (Note 5) TA = +25°C (Note 6) Pulsed Drain Current (Note 7) Symbol VDSS VGSS Value -20 ±8 Unit V V ID -0.77 -0.55 -1.17 A IDM -5.0 A Value 0.43 293 0.99 126 -55 to +150 Unit W °C/W W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Thermal Characteristics P(pk), PEAK TRANSIENT POWER (W) 10 9 Single Pulse o RθJA = 120癈 R C/W/W JA=120 RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) 8 7 6 5 4 3 2 1 0 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (SEC) Fig. 1 Single Pulse Maximum Power Dissipation 100 1,000 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RJA(t) = r(t) * RJA o RθJA = 120癈 R C/W/W JA=120 D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 DMP21D0UFB Datasheet Number: DS35277 Rev. 4 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 2 Transient Thermal Response 2 of 7 www.diodes.com 10 100 1,000 June 2017 © Diodes Incorporated DMP21D0UFB Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current, TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -1 ±10 V A A VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) -0.5 -0.7 V Static Drain-Source On-Resistance RDS(ON) - - |Yfs| VSD 50 - - -1.0 495 690 960 -1.2 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -400mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -100mA VDS = -3V, ID = -300mA VGS = 0V, IS = -300mA Ciss Coss Crss Rg Qg Qg Qgs Qgd - 76.5 13.7 10.7 195 1.5 1.0 0.2 0.3 7.1 8.0 31.7 18.5 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(ON) tR tD(OFF) tF m mS V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -8V, VDS = -15V, ID = -1A VGS = -4.5V, VDS = -15V, ID = -1A VDS = -10V, ID = -1A VGS = -4.5V, RG = 6Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. Typical Characteristics 2.0 2.0 VGS = -4.5V VGS = -4.0V VGS = -2.5V 1.5 )A 1.5 ( T N E R R U C 1.0 N IA R D ,D I- 0.5 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -3.0V VGS = -2.0V 1.0 VGS = -1.8V 0.5 VGS = -1.5V VDS= -5V TA = 150°C TA = 125°C VGS = -1.2V 0 0 1 2 3 4 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 3 Typical Output Characteristic DMP21D0UFB Datasheet Number: DS35277 Rev. 4 - 2 0 5 3 of 7 www.diodes.com TA = 85°C TA = 25°C TA = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS ,GATE-SOURCE VOLTAGE (V) Fig. 4 Typical Transfer Characteristic 3.0 June 2017 © Diodes Incorporated DMP21D0UFB ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.0 0.9 0.8 0.7 0.6 VGS = -1.8V 0.5 0.4 VGS = -2.5V 0.3 VGS = -4.5V 0.2 0.1 0 O (S D 0 0.4 0.8 1.2 1.6 -ID, DRAIN-SOURCE CURRENT (A) Fig. 5 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 1.5 1.3 1.1 VGS = -5.0V ID = -500mA 0.9 VGS = -2.5V ID = -250mA 0.7 R 0.5 -50 -25 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ((癈 C)) Fig. 7 On-Resistance Variation with Temperature V - 0.6 0.5 TA = 150°C 0.4 TA = 125°C TA = 85°C 0.3 TA = 25°C 0.2 TA = -55°C 0.1 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Temperature 2.0 0.8 0.7 0.6 VGS = -2.5V ID = -250mA 0.5 0.4 0.3 VGS = -5.0V ID = -500mA 0.2 0.1 0 -50 1.8 ) A ( T N E R R U C E C R U O S ,S I- -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) T ( S G VGS= -4.5V 2.0 1.2 1.0 0.8 0.6 0.7 -25 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ((癈 C)) Fig. 8 On-Resistance Variation with Temperature 1.4 )V ( E G A T L O V D L O H S E R H T E T A G , )H 0.8 ID = -1mA ID = -250µA 0.4 1.6 1.4 1.2 TA = 25°C 1.0 0.8 0.6 0.4 0.2 0.2 0 -50 -25 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (°C) Fig. 9 Gate Threshold Variation vs. Ambient Temperature DMP21D0UFB Datasheet Number: DS35277 Rev. 4 - 2 4 of 7 www.diodes.com 0 0.4 0.6 0.8 1.0 1.2 -VSD , SOURCE-DRAIN VOLTAGE (V) Fig. 10 Diode Forward Voltage vs. Current June 2017 © Diodes Incorporated DMP21D0UFB 10,000 100,000 )A n ( T N E R R U C E G A K A E L ,S TA = 150°C TA = 125°C TA = 85°C I TA = 25°C 1 0 10,000 IGSS, LEAKAGE CURRENT (nA) -IDSS, LEAKAGE CURRENT (nA) )A n ( T 1,000 N E R R U C E 100 G A K A E L ,S S D 10 -I TA = 125°C 1,000 100 TA = 85°C TA = 25°C 10 TA = -55°C S G 8 12 16 20 -VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Leakage Current vs. Drain-Source Voltage 4 1 0.1 0 2 4 6 8 VGS , GATE-SOURCE VOLTAGE (V) Fig.12 Leakage Current vs. Gate-Source Voltage 8 1,000 CT, JUNCTION CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) f = 1MHz )F p ( E C N A 100 T I C A P A C N O IT C 10 N U J ,T C 1 TA = 150°C ) V ( E G A T L O V E C R U O S -E T A G ,S G V - Ciss Coss Crss 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 -VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Junction Capacitance DMP21D0UFB Datasheet Number: DS35277 Rev. 4 - 2 5 of 7 www.diodes.com 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Qg , TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics 1.6 June 2017 © Diodes Incorporated DMP21D0UFB Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1006-3 A A1 Seating Plane D b Pin #1 ID e E b2 X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L3 L2 L1 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1006-3 C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X G1 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 X1 DMP21D0UFB Datasheet Number: DS35277 Rev. 4 - 2 6 of 7 www.diodes.com June 2017 © Diodes Incorporated DMP21D0UFB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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