Analogic AAT8107IAS-T1 20v p-channel power mosfet Datasheet

AAT8107
20V P-Channel Power MOSFET
General Description
Features
The AAT8107 low threshold 20V, P-channel MOSFET is a member of AnalogicTech's TrenchDMOS
product family. Using an ultra-high density proprietary TrenchDMOS technology, the AAT8107 is
designed for use as a load switch in battery-powered applications and protection in battery packs.
•
•
•
VDS(MAX) = -20V
ID(MAX)1 = -6.5A @ 25°C
Low RDS(ON):
• 35mΩ @ VGS = -4.5V
• 60mΩ @ VGS = -2.5V
SOP-8L Package
Applications
•
•
TrenchDMOS™
Top View
Battery Packs
Battery-Powered Portable Equipment
D
D
D
D
8
7
6
5
Absolute Maximum Ratings
1
2
3
4
TA = 25°C, unless otherwise noted.
S
S
S
G
Symbol
VDS
VGS
Description
Value
Drain-Source Voltage
Gate-Source Voltage
TA = 25°C
TA = 70°C
ID
Continuous Drain Current @ TJ=150°C1
IDM
IS
Pulsed Drain Current2
Continuous Source Current (Source-Drain Diode)1
PD
Maximum Power Dissipation1
TJ, TSTG
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
Units
-20
±12
±6.5
±5.2
±32
-1.7
2.5
1.6
-55 to 150
°C
Value
Units
80
50
27
°C/W
V
A
W
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
Description
1
Typical Junction-to-Ambient Steady State
Maximum Junction-to-Ambient t<10 Seconds1
Typical Junction-to-Foot1
1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2. Pulse test: Pulse Width = 300µs.
8107.2005.05.1.1
1
AAT8107
20V P-Channel Power MOSFET
Electrical Characteristics
TJ = 25°C, unless otherwise noted.
Symbol Description
Conditions
Min
DC Characteristics
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0V, ID = -250µA
-20
RDS(ON)
Drain-Source On-Resistance1
On-State Drain Current1
Gate Threshold Voltage
Gate-Body Leakage Current
Drain Source Leakage
IDSS
Current
gfs
Forward Transconductance1
Dynamic Characteristics2
QG
Total Gate Charge
QGS
Gate-Source Charge
QGD
Gate-Drain Charge
tD(ON)
Turn-On Delay
tR
Turn-On Rise Time
tD(OFF)
Turn-Off Delay
tF
Turn-Off Fall Time
Source-Drain Diode Characteristics
VSD
Source-Drain Forward
Voltage1
IS
Continuous Diode Current3
ID(ON)
VGS(th)
IGSS
VGS = -4.5V, ID = -6.5A
VGS = -2.5V, ID = -5.0A
VGS = -4.5V, VDS = 5V (Pulsed)
VGS = VDS, ID = -250µA
VGS = ±12V, VDS = 0V
VGS = 0V, VDS = -20V
VGS = 0V, VDS = -16V, TJ = 70°C
VDS = -5V, ID = -6.5A
VDS = -15V, RD = 2.3Ω, VGS = -4.5V
VDS = -15V, RD = 2.3Ω, VGS = -4.5V
VDS = -15V, RD = 2.3Ω, VGS = -4.5V
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
VDS = -15V, RD = 2.3Ω, VGS = -4.5V, RG = 6Ω
VGS = 0, IS = -6.5A
Typ
Max
Units
V
27
46
35
60
-32
-0.6
±100
-1
-5
12
mΩ
A
V
nA
µA
S
13.6
2.3
5.5
10
35
38
50
nC
ns
-1.5
V
-1.7
A
1. Pulse test: Pulse Width = 300µs.
2. Guaranteed by design. Not subject to production testing.
3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10-second pulse on a
1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the
foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design; however,
RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
2
8107.2005.05.1.1
AAT8107
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Output Characteristics
Transfer Characteristics
32
5V
4.5V
32
4V
VD = VG
25°C
3.5V
24
125°C
-55°C
24
ID (A)
IDS (A)
3V
16
16
2.5V
2V
8
8
1.5V
0
0
0
0
1
2
3
1
2
4
VDS (V)
On-Resistance vs. Drain Current
5
120
ID = 6.5A
VGS = 2.5V
50
100
RDS(ON) (mΩ)
40
30
VGS = 4.5V
20
80
60
40
20
10
0
0
0
2
4
6
8
10
0
12
1
2
4
5
Threshold Voltage
On-Resistance vs. Junction Temperature
0.5
1.4
VGS = 4.5V
ID = 6.5A
0.4
VGS(th) Variance (V)
1.3
3
VGS (V)
ID (A)
Normalized RDS(ON)
4
On-Resistance vs. Gate-to-Source Voltage
60
RDS(ON) (mΩ)
3
VGS (V)
1.2
1.1
1.0
0.9
0.8
ID = 250µA
0.3
0.2
0.1
0
-0.1
-0.2
0.7
-0.3
-50
0.6
-50
-25
0
25
50
75
100
125
150
-25
0
25
50
75
100
125
150
TJ (°C)
TJ (°C)
8107.2005.05.1.1
3
AAT8107
20V P-Channel Power MOSFET
Typical Characteristics
TJ = 25ºC, unless otherwise noted.
Gate Charge
5
100
VD = 15V
ID = 6.5A
4
TJ = 150°C
10
3
IS (A)
VGS (V)
Source-Drain Diode Forward Voltage
2
TJ = 25°C
1
1
0
0
3
6
9
12
0.1
15
0
0.2
0.4
0.6
QG, Charge (nC)
1
1.2
Single Pulse Power, Junction to Ambient
2000
50
1600
40
Ciss
Power (W)
Capacitance (pF)
Capacitance
1200
0.8
VSD (V)
800
Coss
30
20
10
400
Crss
0
0.001
0
0
5
10
15
20
0.01
0.1
1
10
100
Time (s)
VDS (V)
Transient Thermal Response, Junction to Ambient
Normalized Effective
Transient Thermal
Impedance
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
1E-04
Single Pulse
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
1E+03
Time (s)
4
8107.2005.05.1.1
AAT8107
20V P-Channel Power MOSFET
Ordering Information
Package
Marking
Part Number (Tape and Reel)1
SOP-8
8107
AAT8107IAS-T1
Package Information
3.90 ± 0.10
6.00 ± 0.20
SOP-8
4.90 ± 0.10
0.42 ± 0.09 × 8
1.27 BSC
45°
4° ± 4°
0.175 ± 0.075
1.55 ± 0.20
0.375 ± 0.125
0.235 ± 0.045
0.825 ± 0.445
All dimensions in millimeters.
1. Sample stock is generally held on all part numbers listed in BOLD.
8107.2005.05.1.1
5
AAT8107
20V P-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
6
8107.2005.05.1.1
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