NCS2551 500 MHz Voltage Feedback Op Amp NCS2551 is a 500 MHz voltage feedback monolithic operational amplifier featuring high slew rate and low differential gain and phase error. The voltage feedback architecture allows for a superior bandwidth and low power consumption. http://onsemi.com Features −3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 500 MHz Typ Slew Rate 1400 V/ms Supply Current 5.5 mA Input Referred Voltage Noise 6.0 nV/ ǸHz THD −62 dBc (f = 5.0 MHz, VO = 2.0 Vp−p) Output Current 100 mA Pin Compatible with AD8055, TSH341 This is a Pb−Free Device 5 1 SOT23−5 (TSOP−5) SN SUFFIX CASE 483 MARKING DIAGRAM Applications • Line Drivers • Radar/Communication Receivers 5 YF1 AYWG G NORMALIZED GAIN (dB) 3 1 YF1 = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 0 VOUT = 0.5 VPP −3 VOUT = 1.0 VPP VOUT = 2.0 VPP −6 −9 −12 −15 10k SOT23−5 PINOUT Gain = +2 VS = ±5V RF = 150W RL = 150W 100k 10M 1M FREQUENCY (Hz) 100M 1G Figure 1. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 OUT 1 VEE 2 +IN 3 5 VCC + • • • • • • • • − 4 −IN (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 11 of this data sheet. © Semiconductor Components Industries, LLC, 2006 September, 2006 − Rev. 2 1 Publication Order Number: NCS2551/D NCS2551 PIN FUNCTION DESCRIPTION Pin (SOT23−5/SC70) Symbol Function 1 OUT Output Equivalent Circuit VCC ESD OUT VEE 2 VEE Negative Power Supply 3 +IN Non−inverted Input VCC ESD ESD −IN +IN VEE 4 −IN Inverted Input 5 VCC Positive Power Supply See Above VCC −IN +IN OUT CC VEE Figure 2. Simplified Device Schematic http://onsemi.com 2 NCS2551 ATTRIBUTES Characteristics Value ESD Human Body Model Machine Model Charged Device Model 2.0 kV 200 V 1.0 kV Moisture Sensitivity (Note 1) Level 1 Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in 1. For additional information, see Application Note AND8003/D. MAXIMUM RATINGS Parameter Symbol Rating Unit Power Supply Voltage VS 11 Vdc Input Voltage Range VI vVS Vdc Input Differential Voltage Range VID vVS Vdc Output Current IO 100 mA Maximum Junction Temperature (Note 2) TJ 150 °C Operating Ambient Temperature TA −40 to +85 °C Storage Temperature Range Tstg −60 to +150 °C Power Dissipation PD (See Graph) mW RqJA 158 °C/W Thermal Resistance, Junction−to−Air Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded. MAXIMUM POWER DISSIPATION (mW) MAXIMUM POWER DISSIPATION The maximum power that can be safely dissipated is limited by the associated rise in junction temperature. For the plastic packages, the maximum safe junction temperature is 150°C. If the maximum is exceeded momentarily, proper circuit operation will be restored as soon as the die temperature is reduced. Leaving the device in the “overheated’’ condition for an extended period can result in device damage. 1400 1200 1000 800 600 400 200 0 −50 −25 0 25 50 75 100 AMBIENT TEMPERATURE (C) 125 150 Figure 3. Power Dissipation vs. Temperature http://onsemi.com 3 NCS2551 AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW GF0.1dB Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 2.0 Vp−p 500 300 AV = +2.0 15 MHz dG Differential Gain AV = +2.0, RL = 150 W, f = 3.58 MHz 0.06 % dP Differential Phase AV = +2.0, RL = 150 W, f = 3.58 MHz 0.06 ° Slew Rate AV = +2.0, Vstep = 2.0 V 1400 V/ms Settling Time 0.1% AV = +2.0, Vstep = 2.0 V 10 (10%−90%) AV = +2.0, Vstep = 2.0 V 2.4 ns TIME DOMAIN RESPONSE SR ts tr tf Rise and Fall Time ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −62 dB HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −68 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 2.0 Vp−p −63 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 1.0 Vp−p 40 dBm Spurious−Free Dynamic Range f = 5.0 MHz, VO = 2.0 Vp−p 63 dBc SFDR eN Input Referred Voltage Noise f = 1.0 MHz 6.0 nVń ǸHz iN Input Referred Current Noise f = 1.0 MHz 3.0 pAń ǸHz http://onsemi.com 4 NCS2551 DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit −10 0 +10 mV DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT Input Offset Voltage Input Offset Voltage Temperature Coefficient mV/°C 6.0 Input Bias Current VO = 0 V "3.2 "20 Input Bias Current Temperature Coefficient VO = 0 V "40 nA/°C "3.0 "4.0 V 40 50 dB mA INPUT CHARACTERISTICS VCM CMRR Input Common Mode Voltage Range (Note 3) Common Mode Rejection Ratio (See Graph) RIN Input Resistance 4.5 MW CIN Differential Input Capacitance 1.0 pF 0.1 17 W OUTPUT CHARACTERISTICS ROUT Output Resistance Closed Loop Open Loop VO Output Voltage Range "3.0 "4.0 V IO Output Current "50 "100 mA 10 V POWER SUPPLY VS Operating Voltage Supply IS Power Supply Current PSRR Power Supply Rejection Ratio (See Graph) 3. Guaranteed by design and/or characterization. http://onsemi.com 5 2.0 5.5 40 60 10 mA dB NCS2551 AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit FREQUENCY DOMAIN PERFORMANCE BW GF0.1dB Bandwidth 3.0 dB Small Signal 3.0 dB Large Signal 0.1 dB Gain Flatness Bandwidth MHz AV = +2.0, VO = 0.5 Vp−p AV = +2.0, VO = 1.0 Vp−p 400 200 AV = +2.0 10 MHz dG Differential Gain AV = +2.0, RL = 150 W, f = 3.58 MHz 0.07 % dP Differential Phase AV = +2.0, RL = 150 W, f = 3.58 MHz 0.06 ° Slew Rate AV = +2.0, Vstep = 1.0 V 800 V/ms Settling Time 0.1% AV = +2.0, Vstep = 1.0 V 10 (10%−90%) AV = +2.0, Vstep = 1.0 V 2.2 ns TIME DOMAIN RESPONSE SR ts tr tf Rise and Fall Time ns HARMONIC/NOISE PERFORMANCE THD Total Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −59 dB HD2 2nd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −60 dBc HD3 3rd Harmonic Distortion f = 5.0 MHz, VO = 1.0 Vp−p −67 dBc IP3 Third−Order Intercept f = 10 MHz, VO = 0.5 Vp−p 35 dBm Spurious−Free Dynamic Range f = 5.0 MHz, VO = 1.0 Vp−p 60 dBc SFDR eN Input Referred Voltage Noise f = 1.0 MHz 6.0 nVń ǸHz iN Input Referred Current Noise f = 1.0 MHz 3.0 pAń ǸHz http://onsemi.com 6 NCS2551 DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 150 W to GND, RF = 150 W, AV = +2.0, Enable is left open, unless otherwise specified). Symbol Characteristic Conditions Min Typ Max Unit −10 0 +10 mV DC PERFORMANCE VIO DVIO/DT IIB DIIB/DT Input Offset Voltage Input Offset Voltage Temperature Coefficient mV/°C 6.0 Input Bias Current VO = 0 V "3.2 "20 Input Bias Current Temperature Coefficient VO = 0 V "40 nA/°C "0.9 "1.5 V 40 50 dB mA INPUT CHARACTERISTICS VCM CMRR Input Common Mode Voltage Range (Note 3) Common Mode Rejection Ratio (See Graph) RIN Input Resistance 4.5 MW CIN Differential Input Capacitance 1.0 pF 0.1 17 W OUTPUT CHARACTERISTICS ROUT Output Resistance Closed Loop Open Loop VO Output Voltage Range "0.9 "1.5 V IO Output Current "50 "100 mA 5.0 V POWER SUPPLY VS Operating Voltage Supply IS Power Supply Current PSRR Power Supply Rejection Ratio (See Graph) 4. Guaranteed by design and/or characterization. + − VIN VOUT RL RF RF Figure 4. Typical Test Setup (AV = +2.0, RF = 150 kW, RL = 150 W) http://onsemi.com 7 2.0 5.2 40 60 10 mA dB 3 9 0 6 NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) NCS2551 VOUT = 0.5 VPP −3 VOUT = 1.0 VPP VOUT = 2.0 VPP −6 −9 −12 −15 10k Gain = +2 VS = ±5V RF = 150W RL = 150W 100k 3 0 VOUT = 0.5 VPP −3 −6 −9 1M 10M FREQUENCY (Hz) −12 10k 1G 100M Gain = +1 VS = ±5V RF = 150W RL = 150W 100k Figure 5. Frequency Response: Gain (dB) vs. Frequency Av = +2.0 1G 10G 9 Gain = +1 VOUT = 1.0 VPP 6 NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) 1M 10M 100M FREQUENCY (Hz) Figure 6. Frequency Response: Gain (dB) vs. Frequency Av = +1.0 9 3 0 Gain = +2 VOUT = 2.0 VPP −3 −6 −9 VOUT = 1.0 VPP VS = ±5V RF = 150W RL = 150W −12 10k 100k Gain = +2 VOUT = 1.0 VPP 1M 10M 100M FREQUENCY (Hz) 6 Gain = +1 3 0 −3 Gain = +2 −6 VOUT = 0.5 VPP VS = ±5V RF = 150W RL = 150W −9 1G −12 10k 10G Figure 7. Large Signal Frequency Response Gain (dB) vs. Frequency 100k 1M 10M 100M FREQUENCY (Hz) 1G Figure 8. Small Signal Frequency Response Gain (dB) vs. Frequency VS = ±5V VS = ±5V Figure 9. Small Signal Step Response Vertical: 500 mV/div Horizontal: 10 ns/div Figure 10. Large Signal Step Response Vertical: 2V/div Horizontal: 10 ns/div http://onsemi.com 8 10G NCS2551 −50 −50 DISTORTION (dB) −55 −55 −60 HD3 −65 HD2 THD −60 HD3 −65 HD2 −70 −70 −75 VS = ±5V f = 5MHz RL = 150 W THD DISTORTION (dB) VS = ±5 V VOUT = 2 VPP RL = 150 W −75 1 0 100 10 1 0.5 FREQUENCY (MHz) Figure 11. THD, HD2, HD3 vs. Frequency VS = ±5V PSRR (dB) CMRR (dB) 4 4.5 −20 −30 −40 −30 −5V −40 +5V −50 −50 −60 −60 10 100 10k 1k FREQUENCY (Hz) −70 10k 1M 100k Figure 13. CMRR vs. Frequency 1M 10M FREQUENCY (Hz) 100M Figure 14. PSRR vs. Frequency 0.04 0.04 VS = ±5V RL = 150W Gain = +2 0.02 DIFFERENTIAL PHASE (°) DIFFERENTIAL GAIN (%) 3.5 −10 −20 0.01 0 3.58MHz −0.01 −0.02 4.43MHz −0.03 −0.04 −0.8 3 0 −10 0.02 2 2.5 VOUT (VPP) Figure 12. THD, HD2, HD3 vs. Output Voltage 0 0.03 1.5 0 VS = ±5V RL = 150W Gain = +2 3.58MHz −0.02 −0.04 −0.06 4.43MHz −0.08 −0.1 −0.12 10MHz −0.14 20MHz −0.6 −0.4 10MHz −0.2 0 0.2 0.4 OFFSET VOLTAGE (V) 0.6 −0.16 −0.8 0.8 Figure 15. Differential Gain 20MHz −0.6 −0.4 −0.2 0 0.2 0.4 OFFSET VOLTAGE (V) Figure 16. Differential Phase http://onsemi.com 9 0.6 0.8 NCS2551 10 10 OUTPUT VOLTAGE (VPP) 9 CURRENT (mA) 8 85°C 7 6 25°C 5 −40°C 4 3 2 25°C 8 85°C 7 6 −40°C 5 4 3 1 0 9 4 5 6 7 8 10 9 2 11 4 5 6 7 8 9 POWER SUPPLY VOLTAGE (V) POWER SUPPLY VOLTAGE (V) Figure 17. Supply Current vs. Power Supply 11 Figure 18. Output Voltage Swing vs. Supply Voltage 9 1000 10pF NORMALIZED GAIN (dB) VS = ±5V 100 10 1 0.1 6 3 0 −3 −6 −9 0.01 10k 100k 10M 1M 100M −12 10k 1G 100pF Gain = +2 VOUT = 0.5 VPP VS = ±5V RF = 150W RL = 150W 100k 47pF 1M 100M 1G Figure 20. Frequency Response vs. Capacitive Load 50 VS = ±5 V 40 30 20 10 0 100 10M FREQUENCY (Hz) FREQUENCY (Hz) Figure 19. Closed Loop Output Resistance vs. Frequency VOLTAGE NOISE (nV/√Hz) OUTPUT RESISTANCE (W) 10 1k 10k 100k FREQUENCY (Hz) Figure 21. Input Referred Voltage Noise vs. Frequency http://onsemi.com 10 1M 10G NCS2551 Printed Circuit Board Layout Techniques to input overdrive voltages above the supplies. The ESD diodes can support high input currents with current limiting series resistors. Keep these resistor values as low as possible since high values degrade both noise performance and frequency response. Under closed−loop operation, the ESD diodes have no effect on circuit performance. However, under certain conditions the ESD diodes will be evident. If the device is driven into a slewing condition, the ESD diodes will clamp large differential voltages until the feedback loop restores closed−loop operation. Also, if the device is powered down and a large input signal is applied, the ESD diodes will conduct. NOTE: Human Body Model for +IN and –IN pins are rated at 0.8kV while all other pins are rated at 2.0kV. Proper high speed PCB design rules should be used for all wideband amplifiers as the PCB parasitics can affect the overall performance. Most important are stray capacitances at the output and inverting input nodes as it can effect peaking and bandwidth. A space (3/16″ is plenty) should be left around the signal lines to minimize coupling. Also, signal lines connecting the feedback and gain resistors should be short enough so that their associated inductance does not cause high frequency gain errors. Line lengths less than 1/4″ are recommended. Video Performance This device designed to provide good performance with NTSC, PAL, and HDTV video signals. Best performance is obtained with back terminated loads as performance is degraded as the load is increased. The back termination reduces reflections from the transmission line and effectively masks transmission line and other parasitic capacitances from the amplifier output stage. VCC Internal Circuitry External Pin ESD Protection All device pins have limited ESD protection using internal diodes to power supplies as specified in the attributes table (see Figure 22). These diodes provide moderate protection VEE Figure 22. Internal ESD Protection ORDERING INFORMATION Device NCS2551SNT1G Package Shipping † SOT23−5 (TSOP−5) (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 11 NCS2551 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE F NOTE 5 2X 0.10 T 2X 0.20 T NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 5 1 4 2 3 M B S K L DETAIL Z G A DIM A B C D G H J K L M S DETAIL Z J C 0.05 SEATING PLANE H T SOLDERING FOOTPRINT* 0.95 0.037 MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 12 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCS2551/D