BC846BM3T5G, NSVBC846BM3T5G General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model: >4000 V http://onsemi.com Machine Model: >400 V • NSV Prefix for Automotive and Other Applications Requiring • COLLECTOR 3 Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device 1 BASE 2 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO 65 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 6.0 Vdc IC 100 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 265 mW 2.1 mW/°C RqJA 470 °C/W PD 640 mW Collector Current − Continuous THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range 5.1 mW/°C RqJA 195 °C/W TJ, Tstg −55 to +150 °C MARKING DIAGRAM 3 1 2 SOT−723 CASE 631AA STYLE 1 1B M 1B = Specific Device Code M = Date Code ORDERING INFORMATION Package Shipping† BC846BM3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel NSVBC846BM3T5G SOT−723 (Pb−Free) 8000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. © Semiconductor Components Industries, LLC, 2014 January, 2014 − Rev. 3 1 Publication Order Number: BC846BM3/D BC846BM3T5G, NSVBC846BM3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 65 − − 80 − − 80 − − 6.0 − − − − − − 15 5.0 − 200 150 290 − 450 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) V(BR)CES Collector −Base Breakdown Voltage (IC = 10 mA) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO V V V V nA mA ON CHARACTERISTICS DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE − Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 1.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 550 580 − 645 660 − 700 700 770 mV 100 − − − − 4.5 − − 10 SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) MHz pF NF dB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 BC846BM3T5G, NSVBC846BM3T5G TYPICAL CHARACTERISTICS 0.4 150°C VCE = 5 V VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) 1,000 −55°C 100 0.1 1 10 100 VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) qVB, TEMPERATURE COEFFICIENT (mV) 25°C 0.6 150°C 0.4 IC/IB = 20 0.2 0.1 1 10 100 1,000 −55°C 0.1 1 10 100 1.2 1.0 −55°C 0.8 25°C 0.6 150°C 0.4 VCE = 5 V 0.2 0 0.1 1 10 100 1,000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Base−Emitter Saturation Voltage Figure 4. Base−Emitter “On” Voltage −0.2 VCE = 5 V −1.0 −1.4 qVB, for VBE −2.2 −2.6 −55°C to 150°C 0.1 0.1 Figure 2. Collector−Emitter Saturation Voltage 0.8 −3.0 25°C Figure 1. DC Current Gain −55°C −1.8 150°C 0.2 IC, COLLECTOR CURRENT (mA) 1.0 −0.6 0.3 IC, COLLECTOR CURRENT (mA) 1.2 0 IC/IB = 20 0 1,000 VBE(on), BASE−EMITTER ON VOLTAGE (V) 10 1 10 100 1,000 VCE, COLLECTOR−EMITTER VOLTAGE (V) hFE, DC CURRENT 25°C 2.0 TA = 25°C 10 mA 1.6 20 mA 50 mA 100 mA IC = 200 mA 1.2 0.8 0.4 0 0.01 0.1 1 10 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA) Figure 5. Base−Emitter Temperature Coefficient Figure 6. Collector Saturation Region http://onsemi.com 3 100 BC846BM3T5G, NSVBC846BM3T5G TYPICAL CHARACTERISTICS 1,000 C, CAPACITANCE (pF) Cib Cob 100 1 0.1 VCE = 5 V fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) 10 0.1 1 10 10 100 1 10 100 VR, REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 7. Capacitances Figure 8. Current−Gain−Bandwidth Product http://onsemi.com 4 BC846BM3T5G, NSVBC846BM3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D b1 A −Y− 3 E 1 2X HE 2 2X e b C 0.08 X Y SIDE VIEW TOP VIEW 3X 1 3X DIM A b b1 C D E e HE L L2 L MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.29 REF 0.15 0.20 0.25 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR L2 BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2X 0.40 2X 0.27 PACKAGE OUTLINE 1.50 3X 0.52 0.36 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. 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