ON MSD601-RT1 Npn general purpose amplifier transistors surface mount Datasheet

MSD601-RT1, MSD601-ST1
Preferred Device
NPN General Purpose
Amplifier Transistors
Surface Mount
Features
http://onsemi.com
• Pb−Free Packages are Available
COLLECTOR
3
MAXIMUM RATINGS (TA = 25°C)
Symbol
Value
Unit
Collector − Base Voltage
V(BR)CBO
60
Vdc
Collector − Emitter Voltage
V(BR)CEO
50
Vdc
Emitter − Base Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
IC(P)
200
mAdc
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 ~ +150
°C
Rating
Collector Current − Continuous
Collector Current − Peak
1
BASE
2
EMITTER
MARKING
DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
SC−59
CASE 318D
x
=
M
G
=
=
Yx M G
G
R for RT1
S for ST1
Date Code
Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 9
1
Publication Order Number:
MSD601−RT1/D
MSD601−RT1, MSD601−ST1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Symbol
Min
Max
Unit
Collector − Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
−
Vdc
Collector − Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
7.0
−
Vdc
Collector − Base Cutoff Current
(VCB = 45 Vdc, IE = 0)
ICBO
−
0.1
mAdc
Collector − Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
ICEO
−
100
nAdc
Characteristic
DC Current Gain (Note 1)
(VCE = 10 Vdc, IC = 2.0 mAdc)
MSD601−RT1
MSD601−ST1
(VCE = 2.0 Vdc, IC = 100 mAdc)
−
hFE1
Collector − Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
hFE2
210
290
90
340
460
−
VCE(sat)
−
0.5
Vdc
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Package
Shipping†
SC−59
3000 / Tape & Reel
SC−59
(Pb−Free)
3000 / Tape & Reel
SC−59
3000 / Tape & Reel
SC−59
(Pb−Free)
3000 / Tape & Reel
Device
MSD−601RT1
MSD−601RT1G
MSD−601ST1
MSD−601ST1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
MSD601−RT1, MSD601−ST1
PACKAGE DIMENSIONS
SC*59
CASE 318D*04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
E
2
b
e
C
A
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
L
A1
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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MSD601−RT1/D
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