VS-FB190SA10 Vishay Semiconductors Power MOSFET, 190 A FEATURES • Fully isolated package • Very low on-resistance • Fully avalanche rated • Dynamic dV/dt rating • Low drain to case capacitance • Low internal inductance SOT-227 • Optimized for SMPS applications • Easy to use and parallel • Industry standard outline • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY DESCRIPTION VDSS 100 V ID DC 190 A RDS(on) 0.0065 Type Modules - MOSFET Package SOT-227 High current density power MOSFETs are paralleled into a compact, high power module providing the best combination of switching, ruggedized design, very low on-resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low thermal resistance and easy connection to the SOT-227 package contribute to its universal acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Continuous drain current at VGS 10 V ID Pulsed drain current IDM Power dissipation PD TEST CONDITIONS MAX. TC = 40 °C 190 TC = 100 °C 130 UNITS A 720 TC = 25 °C Linear derating factor 568 W 2.7 W/°C ± 20 V EAS (2) 700 mJ Avalanche current IAR (1) 180 A Repetitive avalanche energy EAR (1) 48 mJ Gate to source voltage VGS Single pulse avalanche energy Peak diode recovery dV/dt dV/dt (3) 5.7 V/ns Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C Insulation withstand voltage (AC-RMS) Mounting torque VISO M4 screw 2.5 kV 1.3 Nm Notes (1) Repetitive rating; pulse width limited by maximum junction temperature. (2) Starting T = 25 °C, L = 43 μH, R = 25 , I J g AS = 180 A. (3) I SD 180 A, dI/dt 83 A/μs, VDD V(BR)DSS, TJ 150 °C. Document Number: 93459 Revision: 12-Apr-11 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Power MOSFET, 190 A Vishay Semiconductors THERMAL RESISTANCE PARAMETER SYMBOL MIN. TYP. MAX. Junction to case RthJC - - 0.22 Case to heatsink, flat, greased surface RthCS - 0.05 - UNITS °C/W ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient SYMBOL V(BR)DSS V(BR)DSS/TJ TEST CONDITIONS VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA MIN. TYP. MAX. UNITS 100 - - V - 0.093 - V/°C Static drain to source on-resistance RDS(on) VGS = 10 V, ID = 180 A - 0.0054 0.0065 Gate threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 3.3 4.35 V gfs VDS = 25 V, ID = 180 A 93 - - S VDS = 100 V, VGS = 0 V - - 50 VDS = 80 V, VGS = 0 V, TJ = 125 °C - - 500 Forward transconductance Drain to source leakage current IDSS Gate to source forward leakage IGSS Total gate charge Qg Gate to source charge Qgs Gate to drain ("Miller") charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) VGS = 20 V - - 200 VGS = - 20 V - - - 200 ID = 180 A VDS = 80 V VGS = 10 V - 250 - - 40 - VDD = 50 V ID = 180 A Rg = 2.0(internal) RD = 0.27 - 110 - - 45 - - 351 - - 181 - Fall time tf - 335 - Internal source inductance LS Between lead, and center of die contact - 5.0 - Input capacitance Ciss - 10 700 - Output capacitance Coss - 2800 - Reverse transfer capacitance Crss VGS = 0 V VDS = 25 V f = 1.0 MHz - 1300 - MIN. TYP. MAX. - - 190 - - 740 μA nA nC ns nH pF SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER Continuous source current (body diode) SYMBOL IS TEST CONDITIONS D UNITS Pulsed source current (body diode) ISM MOSFET symbol showing the integral reverse p-n junction diode. Diode forward voltage VSD TJ = 25 °C, IS = 180 A, VGS = 0 V - 1.0 1.3 TJ = 25 °C, IF = 180 A, dI/dt = 100 A/μs - 300 - ns - 2.6 - μC Reverse recovery time trr Reverse recovery charge Qrr Forward turn-on time ton www.vishay.com 2 A G S V Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) For technical questions, contact: [email protected] Document Number: 93459 Revision: 12-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Power MOSFET, 190 A 2.5 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) TOP 100 4.5V 10 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 R DS(on) , Drain-to-Source On Resistance (Normalized) 1000 Vishay Semiconductors 100 ID = 180A 2.0 1.5 1.0 0.5 1000 0 VGS = Ciss = Crss = Coss = C, Capacitance (pF) I D , Drain-to-Source Current (A) TOP 100 4.5V 10 10 Coss Crss 0 1 100 20 VGS , Gate-to-Source Voltage (V) I D , Drain-to-Source Current (A) TJ = 150 ° C 100 TJ = 25 ° C 10 V DS = 25V 20µs PULSE WIDTH 6 7 8 9 ID = 180 A VDS = 80V VDS = 50V VDS = 20V 15 10 5 FOR TEST CIRCUIT SEE FIGURE 13 0 10 VGS , Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Document Number: 93459 Revision: 12-Apr-11 100 Fig. 5 - Typical Capacitance vs. Drain to Source Voltage 1000 5 10 VDS , Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics 4 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 10000 VDS , Drain-to-Source Voltage (V) 1 80 100 120 140 160 Ciss 20μs PULSE WIDTH TJ = 150 °C 1 60 15000 5000 1 0.1 40 Fig. 4 - Normalized On-Resistance vs. Temperature 20000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 20 TJ , Junction Temperature( ° C) VDS , Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics VGS = 10V 0.0 -60 -40 -20 0 50 100 150 200 250 300 350 400 Q G , Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate to Source Voltage For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Power MOSFET, 190 A Vishay Semiconductors 175 Allowable Case Temperature (°C) ISD , Reverse Drain Current (A) 1000 TJ = 150 ° C 100 10 TJ = 25 ° C 1 0.1 0.2 150 125 DC 100 V GS = 0 V 0.6 1.0 1.4 75 50 25 0 1.8 25 50 75 100 125 150 175 200 I D , Drain Current in DC (A) VSD ,Source-to-Drain Voltage (V) Fig. 7 - Typical Source Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 I D , Drain Current (A) VDS RD 10us VGS 100us 100 RG D.U.T. + - VDD 1ms 10 V 10ms 10 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % TC = 25 ° C TJ = 150 ° C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 10a - Switching Time Test Circuit Fig. 8 - Maximum Safe Operating Area VDS 90% 10% VGS td(on) tr t d(off) tf Fig. 10b - Switching Time Waveforms www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 93459 Revision: 12-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Power MOSFET, 190 A Vishay Semiconductors ZthJC - Thermal Impedance (°C/W) 1 0.75 0.5 0.1 0.3 0.2 Single pulse (thermal resistance) 0.1 DC 0.01 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction to Case EAS , Single Pulse Avalanche Energy (mJ) 1500 ID 71A 100A BOTTOM 160A TOP 1200 15 V L VDS Driver D.U.T RG + - VDD IAS 20 V 0.01 Ω tp A 900 600 300 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( ° C) Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current V (B R )D S S tp QG 10 V QGS QGD VG IAS Charge Fig. 12b - Unclamped Inductive Waveforms Document Number: 93459 Revision: 12-Apr-11 Fig. 13a - Basic Gate Charge Waveform For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Power MOSFET, 190 A Vishay Semiconductors Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 12 V 0.3 µF + V - DS D.U.T. VGS 3 mA IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 RG • • • • + dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - Device under test - VDD Fig. 13c - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive P.W. D= Period P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 14 - For N-Channel Power MOSFETs www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93459 Revision: 12-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FB190SA10 Power MOSFET, 190 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- F B 190 S A 10 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Power MOSFET 3 - Generation 5 MOSFET 4 - Current rating (190 = 190 A) 5 - Single switch 6 - Package indicator (SOT-227) 7 - Voltage rating (10 = 100 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) 3 (D) 2 (G) 4 (S) 1 (S) G (2) S (1-4) Lead Assignment Single switch S (S) (D) 4 3 1 2 (S) (G) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Document Number: 93459 Revision: 12-Apr-11 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 Revision: 15-Nov-10 For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1