Infineon BCR533 Npn silicon digital transistor Datasheet

BCR533
NPN Silicon Digital Transistor
3
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R1=10k, R2 =10k)
2
C
3
1
R1
VPS05161
R2
1
2
B
E
EHA07184
Type
Marking
BCR533
XCs
Pin Configuration
1=B
2=E
Package
3=C
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
50
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
10
Input on Voltage
Vi(on)
50
DC collector current
IC
500
mA
Total power dissipation, TS = 79 °C
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
215
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Dec-13-2001
BCR533
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
50
-
-
V(BR)CBO
50
-
-
ICBO
-
-
100
nA
IEBO
-
-
0.75
mA
hFE
70
-
-
-
-
0.3
Vi(off)
0.6
-
1.5
Vi(on)
1.1
-
2.5
7
10
13
k
0.9
1
1.1
-
-
100
-
DC Characteristics
Collector-emitter breakdown voltage
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain 1)
-
IC = 50 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat
V
IC = 50 mA, IB = 2.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 10 mA, VCE = 0.3 V
Input resistor
R1
Resistor ratio
R1 /R2
AC Characteristics
Transition frequency
fT
MHz
IC = 50 mA, VCE = 5 V, f = 100 MHz
1) Pulse test: t < 300s; D < 2%
2
Dec-13-2001
BCR533
DC Current Gain hFE = f (IC )
Collector-Emitter Saturation Voltage
VCE = 5V (common emitter configuration)
VCEsat = f (IC), hFE = 20
10 3
10 3
mA
10 2
IC
hFE
10 2
10 1
10 1
10 0
10 -1 -1
10
10
0
10
1
10
2
mA 10
10 0
0.0
3
0.2
0.4
V
0.6
IC
1.0
VCEsat
Input on Voltage Vi(on) = f (IC )
Input off voltage Vi(off) = f (IC)
VCE = 0.3V (common emitter configuration)
VCE = 5V (common emitter configuration)
10 3
10 1
mA
mA
10 2
IC
IC
10 0
10 1
10 0
10 -1
10 -1
10 -2 -1
10
10
0
10
1
V
10
10 -2
0.0
2
Vi(on)
0.5
1.0
V
2.0
Vi(off)
3
Dec-13-2001
BCR533
Total power dissipation Ptot = f (TS )
400
mW
Ptot
300
250
200
150
100
50
0
0
20
40
60
80
120 °C
100
150
TS
Permissible Pulse Load
Permissible Pulse Load RthJS = f (tp )
Ptotmax / PtotDC = f (tp)
10 3
10 4
Ptotmax / PtotDC
K/W
RthJS
10 2
10 1
10 3
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
-
10
-5
10
-4
10
-3
10
10 1
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
Dec-13-2001
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