PHILIPS BYT79 Rectifier diodes ultrafast Datasheet

Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYT79 series
FEATURES
SYMBOL
QUICK REFERENCE DATA
VR = 300 V/ 400 V/ 500 V
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Low thermal resistance
k
1
VF ≤ 1.05 V
a
2
IF(AV) = 14 A
trr ≤ 60 ns
GENERAL DESCRIPTION
PINNING
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYT79 series is supplied in the
conventional
leaded
SOD59
(TO220AC) package.
PIN
SOD59 (TO220AC)
DESCRIPTION
1
cathode
2
anode
tab
tab
cathode
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
VRRM
VR
Peak repetitive reverse voltage
Continuous reverse voltage
IF(AV)
Average forward current1
IFSM
Non-repetitive peak forward
current.
Tstg
Tj
Storage temperature
Operating junction temperature
CONDITIONS
MIN.
BYT79
Tmb ≤ 147˚C
square wave; δ = 0.5;
Tmb ≤ 117 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRRM(max)
-
MAX.
-300
300
300
-400
400
400
UNIT
-500
500
500
V
V
-
14
A
-
130
143
A
A
-40
-
150
150
˚C
˚C
THERMAL RESISTANCES
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Rth j-a
CONDITIONS
in free air.
MIN.
TYP.
MAX.
UNIT
-
-
2.0
K/W
-
60
-
K/W
1 Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYT79 series
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qs
Reverse recovery charge
trr
Reverse recovery time
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
IF = 15 A; Tj = 150˚C
IF = 30 A
VR = VRRM
VR = VRRM; Tj = 100 ˚C
IF = 2 A to VR ≥ 30 V;
dIF/dt = 20 A/µs
IF = 1 A to VR ≥ 30 V;
dIF/dt = 100 A/µs
IF = 10 A to VR ≥ 30 V;
dIF/dt = 50 A/µs; Tj = 100˚C
IF = 10 A; dIF/dt = 10 A/µs
I
dI
F
25
F
MIN.
TYP.
MAX.
UNIT
-
0.90
1.17
5.0
0.2
50
1.05
1.38
50
0.8
60
V
V
µA
mA
nC
-
50
60
ns
-
4.0
5.2
A
-
2.5
-
V
BYT79
PF / W
Tmb(max) / C
100
D = 1.0
Vo = 0.9075 V
Rs = 0.0095 Ohms
dt
110
20
t
0.5
rr
15
120
time
0.2
0.1
10
Q
I
I
R
s
10%
100%
D=
tp
T
140
5
t
T
rrm
0
Fig.1. Definition of trr, Qs and Irrm
I
130
tp
I
0
5
10
15
IF(AV) / A
20
150
25
Fig.3. Maximum forward dissipation PF = f(IF(AV));
square wave where IF(AV) =IF(RMS) x √D.
20
F
PF / W
BYT79
Tmb(max) / C
110
Vo = 0.9075 V
Rs = 0.0095 Ohms
a = 1.57
15
1.9
120
2.2
2.8
time
10
130
4
VF
140
5
V
fr
VF
0
time
Fig.2. Definition of Vfr
September 1998
0
5
IF(AV) / A
10
150
15
Fig.4. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYT79 series
trr / ns
1000
1000
Qs / nC
IF=20 A
IF = 20 A
100
100
1A
2A
10
10
Tj = 25 C
Tj = 100 C
1
1
1
100
10
dIF/dt (A/us)
1.0
Fig.5. Maximum trr at Tj = 25˚C and 100˚C
10
10
-dIF/dt (A/us)
100
Fig.8. Maximum Qs at Tj = 25˚C
Irrm / A
10
IF= 20 A
Transient thermal impedance, Zth j-mb (K/W)
1
1
IF=1A
0.1
0.1
PD
0.01
Tj = 25 C
Tj = 100 C
0.01
10
-dIF/dt (A/us)
1
0.001
1us
100
Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C.
50
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYV79E
10s
Fig.9. Transient thermal impedance Zth = f(tp)
BYT79
IF / A
Tj = 25 C
Tj = 150 C
40
30
typ
max
20
10
0
0
0.5
1
VF / V
1.5
2
Fig.7. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
September 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYT79 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1
(2x)
2
0,9 max (2x)
5,08
0,6
2,4
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast
BYT79 series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1998
5
Rev 1.300
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