ON EMZ1DXV6T1 Dual general purpose transistor Datasheet

EMZ1DXV6T1,
EMZ1DXV6T5
Dual General Purpose
Transistors
NPN/PNP Dual (Complementary)
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This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
(3)
(2)
(1)
Features
Q1
• Lead−Free Solder Plating
• Low VCE(SAT), t0.5 V
• These are Pb−Free Devices
Q2
(4)
(5)
(6)
MAXIMUM RATINGS
Symbol
Value
Unit
Collector −Emitter Voltage
Rating
VCEO
−60
V
Collector −Base Voltage
VCBO
−50
V
Emitter −Base Voltage
VEBO
−6.0
V
IC
−100
mAdc
Symbol
Max
Collector Current − Continuous
Total Device Dissipation
TA = 25°C
Derate above 25°C
Characteristic
(Both Junctions Heated)
Unit
PD
mW
357 (Note 1)
2.9 (Note 1)
mW/°C
RqJA
350
(Note 1)
°C/W
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
3Z M G
G
mW/°C
RqJA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad.
April, 2006 − Rev. 1
MARKING DIAGRAM
mW
500 (Note 1)
4.0 (Note 1)
Thermal Resistance,
Junction-to-Ambient
© Semiconductor Components Industries, LLC, 2006
1
SOT−563
CASE 463A
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
6
1
3Z = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
EMZ1DXV6/D
EMZ1DXV6T1, EMZ1DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
(IC = −50 mAdc, IE = 0)
V(BR)CBO
−60
−
−
Vdc
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
V(BR)CEO
−50
−
−
Vdc
Emitter−Base Breakdown Voltage
(IE = −50 mAdc, IE = 0)
V(BR)EBO
−6.0
−
−
Vdc
Collector−Base Cutoff Current
(VCB = −30 Vdc, IE = 0)
ICBO
−
−
−0.5
nA
Emitter−Base Cutoff Current
(VEB = −5.0 Vdc, IB = 0)
IEBO
−
−
−0.5
mA
−
−
−0.5
120
−
560
−
140
−
COB
−
3.5
−
pF
Collector-Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
V(BR)CBO
60
−
−
Vdc
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
−
−
Vdc
Emitter-Base Breakdown Voltage
(IE = 50 mAdc, IE = 0)
V(BR)EBO
7.0
−
−
Vdc
Collector-Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
ICBO
−
−
0.5
mA
Emitter-Base Cutoff Current
(VEB = 7.0 Vdc, IB = 0)
IEBO
−
−
0.5
mA
−
−
0.4
120
−
560
fT
−
180
−
MHz
COB
−
2.0
−
pF
Q1: PNP
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat)
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
hFE
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
Vdc
−
fT
Output Capacitance
(VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
MHz
Q2: NPN
Collector-Emitter Saturation Voltage (Note 3)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
DC Current Gain (Note 3)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
Vdc
hFE
Transition Frequency
(VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
Output Capacitance
(VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz)
−
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
ORDERING INFORMATION
Package
Shipping †
EMZ1DXV6T1
SOT−563*
4000 Units / Tape & Reel
EMZ1DXV6T1G
SOT−563*
4000 Units / Tape & Reel
EMZ1DXV6T5
SOT−563*
8000 Units / Tape & Reel
EMZ1DXV6T5G
SOT−563*
8000 Units / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
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2
EMZ1DXV6T1, EMZ1DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − Q1, PNP
120
VCE , COLLECTOR-EMITTER VOLTAGE (V)
300 mA
250
200
60
150
IB = 50 mA
0
3
6
9
12
10
0.1
15
1
10
100
VCE, COLLECTOR VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
Figure 1. IC − VCE
Figure 2. DC Current Gain
2
900
TA = 25°C
800
1.5
1
0.5
700
600
500
400
300
TA = 25°C
VCE = 5 V
200
100
0
0.01
0.1
1
10
0
0.2
100
1
5
10
20
40
60
80
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. On Voltage
13
14
12
12
11
10
9
8
7
6
0.5
IB, BASE CURRENT (mA)
C ob, CAPACITANCE (pF)
Cib, INPUT CAPACITANCE (pF)
TA = − 25°C
100
100
30
0
DC CURRENT GAIN
90
VCE = 10 V
TA = 25°C
TA = 75°C
COLLECTOR VOLTAGE (mV)
IC, COLLECTOR CURRENT (mA)
1000
TA = 25°C
100
150 200
10
8
6
4
2
0
1
2
3
0
4
0
VEB (V)
10
20
VCB (V)
Figure 5. Capacitance
Figure 6. Capacitance
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3
30
40
EMZ1DXV6T1, EMZ1DXV6T5
TYPICAL ELECTRICAL CHARACTERISTICS − Q2, NPN
1000
160 mA
TA = 25°C
50
140 mA
120 mA
40
100 mA
30
80 mA
20
60 mA
10
IB = 20 mA
TA = − 25°C
100
40 mA
0
0
2
4
6
VCE, COLLECTOR VOLTAGE (V)
10
0.1
8
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
2
900
TA = 25°C
800
COLLECTOR VOLTAGE (mV)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 1. IC − VCE
1.5
1
0.5
700
600
500
400
TA = 25°C
VCE = 5 V
300
200
100
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
0
0.2
100
1
5
10
20
40
60
80
100
150 200
Figure 4. On Voltage
20
7
6
C ob, CAPACITANCE (pF)
18
16
14
12
10
0.5
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Cib, INPUT CAPACITANCE (pF)
VCE = 10 V
TA = 25°C
TA = 75°C
DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
60
5
4
3
2
0
1
2
3
1
4
0
10
20
VEB (V)
VCB (V)
Figure 5. Capacitance
Figure 6. Capacitance
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4
30
40
EMZ1DXV6T1, EMZ1DXV6T5
PACKAGE DIMENSIONS
SOT−563, 6 LEAD
CASE 463A−01
ISSUE F
D
−X−
6
5
1
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
A
L
4
3
E
−Y−
HE
b 65 PL
0.08 (0.003)
DIM
A
b
C
D
E
e
L
HE
C
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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EMZ1DXV6/D
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