Elpida HM51W17805LS-5 16 m edo dram (2-mword x 8-bit) 2 k refresh Datasheet

16 M EDO DRAM (2-Mword × 8-bit)
2 k Refresh
E0155H10 (Ver. 1.0)
(Previous ADE-203-631D (Z))
Jun. 27, 2001
LP
EO
Description
HM51W17805 Series
The HM51W 17805 is a C MOS dynamic R AM orga nized 2, 097,152-w ord × 8-bit. It employs the most
adva nce d C MOS tec hnology for high per forma nce and low powe r. The HM51W 17805 off ers Extende d Da ta
Out (ED O) P age Mode as a high spee d ac ce ss mode. Multiplexe d addr ess input per mits the HM51W 17805 to
be packaged in standard 28-pin plastic SOJ and 28-pin TSOP.
Features
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• Single 3.3 V (±0.3 V)
• Access time: 50 ns/60 ns/70 ns (max)
• Power dissipation
 Active mode: 396 mW/360 mW/324 mW (max)
 Standby mode : 7.2 mW (max)
: 0.54 mW (max) (L-version)
• EDO page mode capability
• Long refresh period
 2048 refresh cycles : 32 ms
: 128 ms (L-version)
• 4 variations of refresh
 RAS-only refresh
 CAS-before-RAS refresh
 Hidden refresh
 Self refresh (L-version)
• Battery backup operation (L-version)
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
EO
HM51W17805 Series
Ordering Information
Type No.
Access time
Package
HM51W17805J-5
HM51W17805J-6
HM51W17805J-7
50 ns
60 ns
70 ns
400-mil 28-pin plastic SOJ (CP-28DA)
HM51W17805LJ-5
HM51W17805LJ -6
HM51W17805LJ -7
50 ns
60 ns
70 ns
HM51W17805S-5
HM51W17805S-6
HM51W17805S-7
50 ns
60 ns
70 ns
HM51W17805TT-5
HM51W17805TT-6
HM51W17805TT-7
LP
HM51W17805LS-5
HM51W17805LS-6
HM51W17805LS-7
300-mil 28-pin plastic SOJ (CP-28DNA)
50 ns
60 ns
70 ns
50 ns
60 ns
70 ns
50 ns
60 ns
70 ns
HM51W17805TS-5
HM51W17805TS-6
HM51W17805TS-7
50 ns
60 ns
70 ns
HM51W17805LTS-5
HM51W17805LTS-6
HM51W17805LTS-7
ro
HM51W17805LTT-5
HM51W17805LTT-6
HM51W17805LTT-7
400-mil 28-pin plastic TSOP II (TTP-28DA)
300-mil 28-pin plastic TSOP II (TTP-28DB)
50 ns
60 ns
70 ns
ct
du
Data Sheet E0155H10
2
EO
HM51W17805 Series
Pin Arrangement
HM51W17805TT/LTT Series
HM51W17805TS/LTS Series
HM51W17805J/LJ Series
HM51W17805S/LS Series
VCC
1
28
VSS
I/O0
2
27
I/O7
I/O6
I/O1
3
26
I/O6
25
I/O5
I/O2
4
25
I/O5
5
24
I/O4
I/O3
5
24
I/O4
6
23
CAS
WE
6
23
CAS
7
22
OE
RAS
7
22
OE
8
21
A9
NC
8
21
A9
9
20
A8
A10
9
20
A8
10
19
A7
A0
10
19
A7
11
18
A6
A1
11
18
A6
12
17
A5
A2
12
17
A5
13
16
A4
A3
13
16
A4
14
15
VSS
14
15
VSS
28
VSS
I/O0
2
27
I/O7
I/O1
3
26
4
I/O2
I/O3
WE
RAS
NC
A10
A0
A1
A3
VCC
(Top view)
Pin Description
VCC
(Top view)
du
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A2
VCC
LP
1
Pin name
Function
A0 to A10
Address input
 Row/Refresh address A0 to A10
 Column address
Data input/data output
RAS
Row address strobe
CAS
Column address strobe
WE
Read/Write enable
OE
Output enable
VCC
Power supply
VSS
Ground
NC
No connection
A0 to A9
ct
I/O0 to I/O7
Data Sheet E0155H10
3
EO
HM51W17805 Series
Block Diagram
A9
•
•
•
buffers
Row
address
Column decoder
2M array
2M array
2M array
2M array
I/O buffers
2M array
2M array
ro
buffers
A10
OE
address
Row decoder
•
•
•
WE
Timing and control
Column
A1
to
CAS
LP
A0
RAS
2M array
2M array
ct
du
Data Sheet E0155H10
4
I/O0
to
I/O7
EO
HM51W17805 Series
Absolute Maximum Ratings
Symbol
Value
Unit
Voltage on any pin relative to VSS
VT
–0.5 to VCC + 0.5 (≤ 4.6 V (max))
V
Supply voltage relative to VSS
VCC
–0.5 to +4.6
V
Short circuit output current
Iout
50
mA
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
–55 to +125
°C
LP
Parameter
Storage temperature
Tstg
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Supply voltage
Input high voltage
Input low voltage
Note:
Symbol
Min
Typ
Max
Unit
Note
VCC
3.0
3.3
3.6
V
1
VIH
2.0
—
VCC + 0.3
V
1
VIL
–0.3
—
0.8
V
1
1. All voltage referred to VSS .
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Data Sheet E0155H10
5
EO
HM51W17805 Series
DC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)
-5
Parameter
-6
-7
Symbol
Min Max Min Max Min Max Unit
Test conditions
Operating current
I CC1
—
110 —
100 —
90
mA
t RC = min
Standby current
I CC2
—
2
—
2
—
2
mA
TTL interface
RAS, CAS = VIH
Dout = High-Z
—
1
—
1
—
1
mA
CMOS interface
RAS, CAS ≥ VCC – 0.2V
Dout = High-Z
*1, *2
LP
Standby current (L-version)
I CC2
—
150 —
150 —
150 µA
CMOS interface
RAS, CAS ≥ VCC – 0.2V
Dout = High-Z
RAS-only refresh current*2
I CC3
—
110 —
100 —
90
mA
t RC = min
I CC5
—
5
5
5
mA
RAS = VIH, CAS = VIL
Dout = enable
CAS-before-RAS refresh
current
I CC6
—
110 —
100 —
90
mA
t RC = min
EDO page mode current*1, *3
I CC7
—
100 —
90
85
mA
t HPC = min
Battery backup current
(Standby with CBR refresh)
(L-version)
I CC10
—
400 —
400 —
400 µA
CMOS interface
Dout = High-Z
CBR refresh: t RC = 62.5 µs
t RAS ≤ 0.3 µs
Self refresh mode current
(L-version)
I CC11
—
250 —
250 —
250 µA
CMOS interface
RAS, CAS ≤ 0.2V
Dout = High-Z
Input leakage current
I LI
–10 10
–10 10
–10 10
µA
0 V ≤ Vin ≤ 4.6 V
Output leakage current
I LO
–10 10
–10 10
–10 10
µA
0 V ≤ Vout ≤ 4.6 V
Dout = disable
Output high voltage
VOH
2.4
VCC 2.4
VCC 2.4
VCC
V
High Iout = –2 mA
Output low voltage
VOL
0
0.4
0.4
0.4
V
Low Iout = 2 mA
*1
Standby current
0
—
—
du
ro
*4
—
0
ct
Notes: 1. I CC depends on output load condition when the device is selected. I CC max is specified at the output
open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
4. CAS = L (≤ 0.2 V) while RAS = L (≤ 0.2 V).
Data Sheet E0155H10
6
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HM51W17805 Series
Capacitance (Ta = 25°C, VCC = 3.3 V ± 0.3 V)
Parameter
Symbol
Typ
Max
Unit
Notes
Input capacitance (Address)
CI1
—
5
pF
1
Input capacitance (Clocks)
CI2
—
7
pF
1
Output capacitance (Data-in, Data-out)
CI/O
—
7
pF
1, 2
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. CAS = VIH to disable Dout.
LP
AC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)*1, *2, *18
Test Conditions
•
•
•
•
•
Input rise and fall time: 2 ns
Input levels: VIL = 0 V, VIH = 3 V
Input timing reference levels: 0.8 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + C L (100 pF) (Including scope and jig)
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Data Sheet E0155H10
7
EO
HM51W17805 Series
Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters)
HM51W17805
-5
-6
-7
Symbol
Min
Max
Min
Max
Min
Max
Unit
Random read or write cycle time
t RC
84
—
104
—
124
—
ns
RAS precharge time
t RP
30
—
40
—
50
—
ns
CAS precharge time
t CP
8
—
10
—
13
—
ns
t RAS
50
10000 60
10000 70
10000 ns
t CAS
8
10000 10
10000 13
10000 ns
Row address setup time
t ASR
0
—
0
—
0
—
ns
Row address hold time
t RAH
8
—
10
—
10
—
ns
Column address setup time
t ASC
0
—
0
—
0
—
ns
Column address hold time
t CAH
8
—
10
—
13
—
ns
RAS to CAS delay time
t RCD
12
37
14
45
14
52
ns
3
RAS to column address delay time t RAD
10
25
12
30
12
35
ns
4
RAS hold time
t RSH
10
—
13
—
13
—
ns
t CSH
35
—
40
—
45
—
ns
5
—
5
—
5
—
ns
13
—
15
—
18
—
ns
5
0
—
0
—
0
—
ns
6
0
—
0
—
0
—
ns
6
2
50
2
50
2
50
ns
7
RAS pulse width
CAS pulse width
CAS to RAS precharge time
t CRP
OE to Din delay time
t OED
OE delay time from Din
t DZO
CAS delay time from Din
t DZC
Transition time (rise and fall)
tT
ct
du
ro
CAS hold time
LP
Parameter
Data Sheet E0155H10
8
Notes
EO
HM51W17805 Series
Read Cycle
HM51W17805
-5
-6
-7
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Access time from RAS
t RAC
—
50
—
60
—
70
ns
8, 9
Access time from CAS
t CAC
—
13
—
15
—
18
ns
9, 10, 17
Access time from address
t AA
—
25
—
30
—
35
ns
9, 11, 17
Access time from OE
t OEA
—
13
—
15
—
18
ns
9
Read command setup time
t RCS
0
—
0
—
0
—
ns
Read command hold time to CAS
t RCH
0
—
0
—
0
—
ns
Read command hold time from RAS t RCHR
50
—
60
—
70
—
ns
Read command hold time to RAS
t RRH
0
—
0
—
0
—
ns
Column address to RAS lead time
t RAL
25
—
30
—
35
—
ns
Column address to CAS lead time
t CAL
15
—
18
—
23
—
ns
CAS to output in low-Z
t CLZ
0
—
0
—
0
—
ns
Output data hold time
t OH
3
—
3
—
3
—
ns
Output data hold time from OE
t OHO
3
—
3
—
3
—
ns
Output buffer turn-off time
t OFF
Output buffer turn-off to OE
t OEZ
CAS to Din delay time
t CDD
Output data hold time from RAS
t OHR
Output buffer turn-off to RAS
t OFR
Output buffer turn-off to WE
t WEZ
WE to Din delay time
ro
LP
Parameter
12
12
20
13
—
15
—
15
ns
13, 20
—
13
—
15
—
15
ns
13
13
—
15
—
18
—
ns
5
3
—
3
—
3
—
ns
20
—
13
—
15
—
15
ns
20
—
13
—
15
—
15
ns
t WED
13
—
RAS to Din delay time
t RDD
13
—
RAS next CAS delay time
t RNCD
50
—
du
—
15
—
18
—
ns
15
—
18
—
ns
60
—
70
—
ns
ct
Data Sheet E0155H10
9
EO
HM51W17805 Series
Write Cycle
HM51W17805
-5
-6
-7
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Write command setup time
t WCS
0
—
0
—
0
—
ns
14
Write command hold time
t WCH
8
—
10
—
13
—
ns
Write command pulse width
t WP
8
—
10
—
10
—
ns
Write command to RAS lead time
t RWL
8
—
10
—
13
—
ns
Write command to CAS lead time
t CWL
8
—
10
—
13
—
ns
Data-in setup time
t DS
0
—
0
—
0
—
ns
15
t DH
8
—
10
—
13
—
ns
15
Notes
Data-in hold time
LP
Parameter
Read-Modify-Write Cycle
-5
-6
-7
Symbol
Min
Max
Min
Max
Min
Max
Unit
Read-modify-write cycle time
t RWC
111
—
135
—
161
—
ns
RAS to WE delay time
t RWD
67
—
79
—
92
—
ns
14
CAS to WE delay time
t CWD
30
—
34
—
40
—
ns
14
Column address to WE delay time
t AWD
42
—
49
—
57
—
ns
14
OE hold time from WE
t OEH
13
—
15
—
18
—
ns
Refresh Cycle
du
ro
Parameter
HM51W17805
HM51W17805
-5
Parameter
Symbol
-6
-7
Max
Min
Max
Min
Max
Unit
CAS setup time (CBR refresh cycle) t CSR
5
—
5
—
5
—
ns
CAS hold time (CBR refresh cycle) t CHR
8
—
10
—
10
—
ns
WE setup time (CBR refresh cycle) t WRP
0
—
0
—
0
—
ns
WE hold time (CBR refresh cycle)
t WRH
8
—
10
—
10
—
ns
RAS precharge to CAS hold time
t RPC
5
—
5
—
5
—
ns
Data Sheet E0155H10
10
ct
Min
Notes
EO
HM51W17805 Series
EDO Page Mode Cycle
HM51W17805
-5
-6
-7
Symbol
Min Max
Min Max
Min Max
Unit
Notes
EDO page mode cycle time
t HPC
20
—
25
30
ns
19
EDO page mode RAS pulse width
t RASP
—
100000 —
100000 —
100000 ns
16
Access time from CAS precharge
t CPA
—
30
—
35
—
40
ns
9, 17
RAS hold time from CAS precharge t CPRH
30
—
35
—
40
—
ns
Output data hold time from CAS low t DOH
3
—
3
—
3
—
ns
CAS hold time referred OE
t COL
8
—
10
—
13
—
ns
CAS to OE setup time
t COP
5
—
5
—
5
—
ns
30
—
35
—
40
—
ns
LP
Parameter
Read command hold time from CAS t RCHC
precharge
—
—
9, 17
EDO Page Mode Read-Modify-Write Cycle
HM51W17805
ro
-5
Parameter
Symbol
EDO page mode read- modify-write t HPRWC
cycle time
WE delay time from CAS precharge t CPW
-6
-7
Min
Max
Min
Max
Min
57
—
68
—
79
ns
45
—
54
—
62
ns
Parameter
Symbol
Refresh period
t REF
Refresh period (L-version)
t REF
du
Refresh
Max
Unit
Notes
14
Max
Unit
Note
32
ms
2048 cycles
128
ms
2048 cycles
ct
Data Sheet E0155H10
11
EO
HM51W17805 Series
Self Refresh Mode (L-version)
HM51W17805L
-5
-6
-7
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
RAS pulse width (self refresh)
t RASS
100
—
100
—
100
—
µs
RAS precharge time (self refresh)
t RPS
90
—
110
—
130
—
ns
CAS hold time (self refresh)
t CHS
–50
—
–50
—
–50
—
ns
Notes
ct
du
ro
LP
Notes: 1. AC measurements assume t T = 2 ns.
2. An initial pause of 200 µs is required after power up followed by a minimum of eight initialization
cycles (any combination of cycles containing RAS-only refresh or CAS-before-RAS refresh). If the
internal refresh counter is used, a minimum of eight CAS-before-RAS refresh cycles are required.
3. Operation with the t RCD (max) limit insures that t RAC (max) can be met, t RCD (max) is specified as a
reference point only; if t RCD is greater than the specified t RCD (max) limit, then access time is controlled
exclusively by t CAC .
4. Operation with the t RAD (max) limit insures that t RAC (max) can be met, t RAD (max) is specified as a
reference point only; if t RAD is greater than the specified t RAD (max) limit, then access time is controlled
exclusively by t AA .
5. Either t OED or t CDD must be satisfied.
6. Either t DZO or t DZC must be satisfied.
7. VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Also, transition times
are measured between VIH (min) and VIL (max).
8. Assumes that t RCD ≤ t RCD (max) and t RAD ≤ t RAD (max). If t RCD or t RAD is greater than the maximum
recommended value shown in this table, t RAC exceeds the value shown.
9. Measured with a load circuit equivalent to 1 TTL loads and 100 pF.
10. Assumes that t RCD ≥ t RCD (max) and t RAD ≤ t RAD (max).
11. Assumes that t RCD ≤ t RCD (max) and t RAD ≥ t RAD (max).
12. Either t RCH or t RRH must be satisfied for a read cycles.
13. t OFF (max) and t OEZ (max) define the time at which the outputs achieve the open circuit condition and
are not referred to output voltage levels.
14. t WCS , t RWD, t CWD, t AWD and t CPW are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only; if t WCS ≥ t WCS (min), the cycle is an early write cycle and the data
out pin will remain open circuit (high impedance) throughout the entire cycle; if t RWD ≥ t RWD (min), t CWD ≥
t CWD (min), and t AWD ≥ t AWD (min), or t CWD ≥ t CWD (min), t AWD ≥ t AWD (min) and t CPW ≥ t CPW (min), the cycle is a
read-modify-write and the data output will contain data read from the selected cell; if neither of the
above sets of conditions is satisfied, the condition of the data out (at access time) is indeterminate.
15. These parameters are referred to CAS leading edge in early write cycles and to WE leading edge in
delayed write or read-modify-write cycles.
16. t RASP defines RAS pulse width in EDO page mode cycles.
17. Access time is determined by the longest among t AA , t CAC and t CPA.
18. In delayed write or read-modify-write cycles, OE must disable output buffer prior to applying data to
the device.
19. t HPC (min) can be achieved during a series of EDO page mode write cycles or EDO page mode read
cycles. If both write and read operation are mixed in a EDO page mode RAS cycle (EDO page mode
mix cycle (1), (2)), minimum value of CAS cycle (tCAS + t CP + 2 t T) becomes greater than the specified
t HPC (min) value. The value of CAS cycle time of mixed EDO page mode is shown in EDO page mode
mix cycle (1) and (2).
Data Sheet E0155H10
12
EO
HM51W17805 Series
ct
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LP
20. Data output turns off and becomes high impedance from later rising edge of RAS and CAS. Hold time
and turn off time are specified by the timing specifications of later rising edge of RAS and CAS
between t OHR and t OH , and between t OFR and t OFF.
21. Please do not use t RASS timing, 10 µs ≤ t RASS ≤ 100 µs. During this period, the device is in transition
state from normal operation mode to self refresh mode. If t RASS ≥ 100 µs, then RAS precharge time
should use t RPS instead of t RP.
22. If you use RAS only refresh or CBR burst refresh mode in normal read/write cycles, 2048 cycles of
distributed CBR refresh with 15.6 µs interval should be executed within 32 ms immediately after
exiting from and before entering into the self refresh mode.
23. If you use distributed CBR refresh mode with 15.6 µs interval in normal read/write cycle, CBR refresh
should be executed within 15.6 µs immediately after exiting from and before entering into self
refresh mode.
24. Repetitive self refresh mode without refreshing all memory is not allowed. Once you exit from self
refresh mode, all memory cells need to be refreshed before re-entering the self refresh mode again.
25. XXX: H or L (H: VIH (min) ≤ VIN ≤ VIH (max), L: VIL (min) ≤ VIN ≤ VIL (max))
///////: Invalid Dout
When the address, clock and input pins are not described on timing waveforms, their pins must be
applied VIH or VIL.
Data Sheet E0155H10
13
EO
HM51W17805 Series
Timing Waveforms*25
Read Cycle
t RC
t RAS
t RP
RAS
LP
t CSH
t CRP
t RCD
t RSH
t CAS
tT
CAS
t RAD
t ASR
Address
t RAH
Row
t RAL
t ASC
t CAL
t CAH
Column
ro
t RRH
t RCHR
t RCS
WE
t DZC
t RCH
t WED
t CDD
du
t RDD
High-Z
Din
t DZO
t OEA
OE
t OEZ
t OHO
t OFF
t AA
ct
t CAC
t OED
t OH
t OFR
t OHR
t RAC
t CLZ
t WEZ
Dout
Dout
Data Sheet E0155H10
14
EO
HM51W17805 Series
Early Write Cycle
tRC
tRAS
tRP
RAS
tCSH
tCRP
LP
tRCD
tRSH
tCAS
tT
CAS
tASR
Address
tRAH
Row
tASC
tCAH
Column
ro
tWCS
WE
tWCH
Din
Dout
tDH
Din
du
tDS
High-Z*
ct
* t WCS
t WCS (min)
Data Sheet E0155H10
15
EO
HM51W17805 Series
Delayed Write Cycle*18
t RC
t RAS
t RP
RAS
t CSH
t CRP
LP
t RCD
t RSH
t CAS
tT
CAS
t ASR
Address
t RAH
t ASC
Row
t CAH
Column
t CWL
ro
t RCS
WE
t DZC
High-Z
Din
t DZO
t OEH
t OED
t OEZ
t CLZ
High-Z
Dout
Invalid Dout
Data Sheet E0155H10
16
ct
OE
t DH
du
Din
t DS
t RWL
t WP
EO
HM51W17805 Series
Read-Modify-Write Cycle*18
t RWC
t RAS
t RP
RAS
t RCD
LP
CAS
tT
t CAS
t CRP
t RAD
t ASR
Address
tRAH
t ASC
Row
t CAH
Column
t RCS
tCWL
t AWD
t RWL
t RWD
t WP
ro
WE
t CWD
t DZC
t DH
t DS
du
High-Z
Din
Din
t OED
t DZO
t OEH
t OEA
OE
t CAC
t OEZ
t RAC
t OHO
Dout
Dout
t CLZ
ct
t AA
High-Z
Data Sheet E0155H10
17
EO
HM51W17805 Series
RAS-Only Refresh Cycle
t RC
t RAS
t RP
RAS
t CRP
t RPC
LP
CAS
tT
t ASR
Address
t CRP
t RAH
Row
t OFR
t OFF
Data Sheet E0155H10
18
ct
du
!
High-Z
ro
Dout
EO
HM51W17805 Series
CAS-Before-RAS Refresh Cycle
t RC
t RP
t RAS
t RP
RAS
t CSR
t CHR
t RPC
t CRP
,
t RPC
tT
LP
CAS
t CP
WE
Address
t OFF
Dout
t CP
t WRH
High-Z
ct
du
ro
t OFR
t WRP
Data Sheet E0155H10
19
EO
HM51W17805 Series
Hidden Refresh Cycle
t RC
t RC
t RP
t RAS
t RAS
t RC
t RP
t RAS
t RP
RAS
tT
t RSH
t CHR
t CRP
LP
t RCD
CAS
t RAD
t ASR t RAH
Address
t RAL
t ASC
Row
t CAH
Column
t WRH
t WRP
t WRP
tWRH
WE
t DZC
t DZO
t OEA
OE
t CAC
t AA
t RAC
Dout
t OHR
Data Sheet E0155H10
t CDD
t RDD
t OED
t OFF
t OH
t OFR
20
t WED
ct
t CLZ
Dout
t RRH
t RCH
High-Z
du
Din
ro
t RCS
t RRH
t OEZ
t WEZ
t OHO
EO
HM51W17805 Series
EDO Page Mode Read Cycle
t RP
t RNCD
t RASP
RAS
tT
t CSH
Address
tRAH tASC
Row
t HPC
tCAH
Column 1
RSH
tCAS
tCAS
t RCHC
t ASC t CAH
t ASC t CAH
Column 2
Column 3
t CAL
t CRP
t CPRH
t CP
t
t RCH t RCS
LP
tASR
t CP
t CAS
t RCHR
t RCS
WE
t HPC
t CP
t CAS
CAS
t HPC
t CAL
t RRH
t RCH
t RAL
t CAH
tASC
t WED
Column 4
t CAL
t CAL
tRDD
tCDD
tDZC
Din
High-Z
tCOL
tCOP
tOED
ro
tDZO
OE
tCPA
tOEA
tAA
tCAC
tCAC
tAA
tWEZ
Dout
Dout 1
tOHO
tAA
tOEZ
tOEA
Dout 2
tDOH
du
tRAC
tOEZ
tOFR
tOHR
tOEZ
tCPA
tCPA
tAA
tCAC
Dout 2
tOHO
Dout 3
tCAC
tOHO
tOFF
tOH
tOEA
Dout 4
ct
Data Sheet E0155H10
21
EO
HM51W17805 Series
EDO Page Mode Early Write Cycle
tRP
tRASP
RAS
tT
tASR
Address
tHPC
tCAS
tRCD
LP
CAS
tCSH
Row
tRAH
tASC
tCAH
Column 1
tWCH
WE
tDS
Dout
tDH
Din 1
tCAS
tASC
tCAH
Column 2
tWCH
tWCS
tDS
tDH
tCP
tCAS
tASC
tCRP
tCAH
Column N
tWCS
tDS
tWCH
tDH
du
Din
tCP
ro
tWCS
tRSH
Din 2
Din N
High-Z*
ct
* t WCS
Data Sheet E0155H10
22
t WCS (min)
EO
HM51W17805 Series
EDO Page Mode Delayed Write Cycle*18
t RASP
t RP
RAS
tT
t CP
CAS
t HPC
t CAS
LP
t CSH
t RCD
t CRP
t CP
t CAS
t RSH
t CAS
t RAD
t ASR
t ASC
t RAH
Address
t ASC
t CAH
Row
t ASC
t CAH
Column 1
t CAH
Column 2
t CWL
t RCS
t WP
t WP
t DZC t DS
t DZC t DS
t DH
Din
1
Din
t DH
Din
2
Din
N
t DZO
#
t DZO
t DH
du
t DZO
t CWL
t RCS
ro
t WP
t DZC t DS
t CWL
t RWL
t RCS
WE
Column N
t OED
t OED
t OEH
t OEH
OE
t CLZ
t CLZ
t OEZ
t OEH
t CLZ
t OEZ
Invalid Dout
t OEZ
High-Z
ct
Dout
Invalid Dout
t OED
Invalid Dout
Data Sheet E0155H10
23
EO
HM51W17805 Series
EDO Page Mode Read-Modify-Write Cycle*18
t RASP
t RP
RAS
tT
t HPRWC
t RCD
CAS
t RSH
t CP
LP
t CP
t CAS
t CAS
t CRP
t CAS
t RAD
t ASR
Address
t ASC
t RAH
Row
t ASC
t CAH
t CAH
Column 1
t RWD
Column 2
t CWL
t WP
t DZC t DS
t RCS
t WP
t DZO
t OED
t WP
t DH
Din
N
t OED
t DZO
t OEH
t OEH
*#
t OEH
t DH
Din
2
t OED
t DZO
t RWL
t DZC t DS
du
Din
1
t CWL
t CWD
t DZC t DS
t DH
Din
t CPW
t AWD
t CWD
ro
t RCS
t CWL
t AWD
t RCS
WE
Column N
t CPW
t AWD
t CWD
t ASC
t CAH
OE
t OHO
t OEA
t CAC
t OHO
t OEA
t CAC
t AA
t AA
t CPA
t RAC
t CLZ
t AA
t CPA
t OEZ
t CLZ
t OEZ
ct
t OEZ
t CLZ
t OHO
t OEA
t CAC
High-Z
Dout
Dout 1
Dout 2
Data Sheet E0155H10
24
Dout N
EO
HM51W17805 Series
EDO Page Mode Mix Cycle (1)
t RP
t RASP
RAS
tT
t CAS
CAS
t CRP
t CP
t CP
t CP
t CAS
tCAS
tCAS
LP
t CSH
tRSH
t RCD
t WCS
WE
t ASC
tRAH
tASR
Address
Row
t WCH
tCAH
Column 1
t CAL
t DS
tCPW
tAWD
t ASC t CAH
tASC t CAH
Column 2
Column 3
t CAL
tASC
t RAL
t CAH
Column 4
t CAL
t DH
Din 1
tWP
High-Z
tRDD
tCDD
t CAL
t DH
t DS
Din 3
ro
tOED
tWED
Din
t RRH
t RCH
t RCS
t RCS
OE
tCPA
tAA
tOEA
Dout
tAA
t OEZ
tCAC t OHO
du
tCAC
t DOH
Dout 2
tOFR
tWEZ
tCPA
tCPA
Dout 3
tAA
tOEZ
tCAC
tOHO
tOEA
tOFF
tOH
Dout 4
ct
Data Sheet E0155H10
25
EO
HM51W17805 Series
EDO Page Mode Mix Cycle (2)
t RNCD
t RP
t RASP
RAS
tT
CAS
t CSH
t CAS
t ASC
tRAH
tASR
Address
Row
t RCH tWCS t WCH
tCAH
tCAS
Column 1
Column 2
Column 3
t RAL
t CAH
tASC
Column 4
t CAL
t CAL
t DS
t DH
tRDD
tCDD
t DH
Din 2
ro
High-Z
t CAL
t RRH
t RCH
tWP
tCPW
t ASC t CAH
t DS
tRSH
t RCS
t RCS
t ASC t CAH
t CAL
Din
tCAS
t RCHR
t RCS
WE
t CAS
LP
t RCD
t CRP
t CP
t CP
Din 3
tOED
tOED
tCOP
tWED
tCOL
OE
tAA
tOEA
tCAC
tOEZ
tCPA
tAA
Dout 1
tOEZ
du
t OHO
tOFR
tWEZ
tCPA
tCAC
tRAC
Dout
t OEA
t OHO
Dout 3
tAA
tCAC
tOEZ
tOEA
tOFF
tOH
tOHO
Dout 4
ct
Data Sheet E0155H10
26
EO
HM51W17805 Series
Self Refresh Cycle (L-version)* 21, 22, 23, 24
t RASS
t RP
t RPS
RAS
tT
,
,
t RPC
t WRP
WE
t CHS
LP
CAS
t CP
t CRP
t CSR
t WRH
$%&+,
t OFR
t OFF
ro
Dout
High-Z
ct
du
Data Sheet E0155H10
27
EO
HM51W17805 Series
Package Dimensions
HM51W17805J/LJ Series (CP-28DA)
Unit: mm
18.17
18.54 Max
11.18 ± 0.13
LP
ro
0.43 ± 0.10
0.41 ± 0.08
0.80 +0.25
–0.17
1.30 Max
1.27
0.10
Dimension including the plating thickness
Base material dimension
2.85 ± 0.12
14
0.74
3.50 ± 0.26
1
10.16 ± 0.13
15
28
9.40 ± 0.25
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
CP-28DA
Conforms
Conforms
1.16 g
ct
du
Data Sheet E0155H10
28
EO
HM51W17805 Series
HM51W17805S/LS Series (CP-28DNA)
Unit: mm
18.41
18.84 Max
0.25
2.45 +– 0.36
1.165 Max
0.43 ± 0.10
0.41 ± 0.08
8.51 ± 0.12
14
0.90 ± 0.26
0.74
3.50 ± 0.26
LP
1
7.62 ± 0.12
15
28
6.79 ± 0.18
1.27
ro
0.10
Dimension including the plating thickness
Base material dimension
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
CP-28DNA
—
—
0.95 g
ct
du
Data Sheet E0155H10
29
EO
HM51W17805 Series
HM51W17805TT/LTT Series (TTP-28DA)
Unit: mm
18.41
18.81 Max
15
LP
0.21
14
0.80
M
11.76 ± 0.20
Dimension including the plating thickness
Base material dimension
0.145 ± 0.05
0.125 ± 0.04
0.10
0° – 5°
0.50 ± 0.10
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TTP-28DA
Conforms
—
0.43 g
ct
du
ro
1.20 Max
1.15 Max
Data Sheet E0155H10
30
0.68
0.42 ± 0.08
0.40 ± 0.06
1.27
0.13 ± 0.05
1
10.16
28
EO
HM51W17805 Series
HM51W17805TS/LTS Series (TTP-28DB)
Unit: mm
18.41
18.81 Max
15
LP
0.42 ± 0.08
0.40 ± 0.06
1.27
14
0.21 M
0.80
9.22 ± 0.2
Dimension including the plating thickness
Base material dimension
0.13 ± 0.05
0.50 ± 0.10
0.145 ± 0.05
0.125 ± 0.04
0.10
0° – 5°
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TTP-28DB
—
—
0.35 g
ct
du
ro
1.20 Max
1.15 Max
0.63
1
7.62
28
Data Sheet E0155H10
31
EO
HM51W17805 Series
Cautions
ct
du
ro
LP
1. Elpida Memory, Inc. neither warrants nor grants licenses of any rights of Elpida Memory, Inc.’s or any third
party’s patent, copyright, trademark, or other intellectual property rights for information contained in this
document. Elpida Memory, Inc. bears no responsibility for problems that may arise with third party’s rights,
including intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, contact Elpida Memory, Inc. before using the product in an application that demands especially
high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic,
safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Elpida Memory, Inc.
particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when
used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. product does not cause bodily injury, fire or other
consequential damage due to operation of the Elpida Memory, Inc. product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Elpida Memory, Inc..
7. Contact Elpida Memory, Inc. for any questions regarding this document or Elpida Memory, Inc.
semiconductor products.
Data Sheet E0155H10
32
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