Order this document by MPSA75/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 BASE 2 EMITTER 1 1 MAXIMUM RATINGS 2 Rating Symbol MPSA75 MPSA77 Unit Collector – Emitter Voltage VCES –40 –60 Vdc Emitter – Base Voltage VEBO –10 Collector Current — Continuous IC –500 Adc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) Vdc THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –100 µAdc, VBE = 0) MPSA75 MPSA77 V(BR)CES –40 –60 — — — — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) MPSA75 MPSA77 V(BR)CBO –40 –60 — — — — Vdc Collector Cutoff Current (VCB= –30 V, IE = 0) (VCB = –50 V, IE = 0) MPSA75 MPSA77 — — — — –100 –100 Collector Cutoff Current (VCE = –30 V, VBE = 0) (VCE = –50 V, VBE = 0) MPSA75 MPSA77 — — — — –500 –500 — — –100 10,000 10,000 — — — — VCE(sat) — — –1.5 Vdc VBE — — –2.0 Vdc |hfe| 1.25 2.4 — — ICBO nAdc ICES Emitter Cutoff Current (VEB = –10 Vdc) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = –10 mA, VCE = –5.0 V) (IC = –100 mA, VCE = –5.0 V) Collector – Emitter Saturation Voltage (IC = –100 mA, IB = –0.1 mAdc) Base – Emitter On Voltage (IC = –100 mA, VCE = –5.0 Vdc) hFE — SMALL– SIGNAL CHARACTERISTICS Current – Gain — High Frequency (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 hFE , DC CURRENT GAIN (X1.0 K) 200 TA = 125°C 100 70 50 –10 V 30 25°C VCE = –2.0 V –5.0 V 20 10 7.0 5.0 –55°C 3.0 2.0 –0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –200 –100 –300 IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain –2.0 TA = 25°C VBE(sat) @ IC/IB = 100 V, VOLTAGE (VOLTS) –1.6 –1.2 VBE(on) @ VCE = –5.0 V –0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 –0.4 0 –0.3 –0.5 –1.0 –2 –3 –5 –10 –20 –30 –50 IC, COLLECTOR CURRENT (mA) –100 –200 –300 –2.0 TA = 25°C –1.8 –1.6 –1.4 IC = –10 mA –50 mA –100 mA –175 mA –1.2 –1.0 –0.8 –0.6 –0.1–0.2 –0.5 –1 –2 Figure 2. “On” Voltage –1000 IC, COLLECTOR CURRENT (mA) |h FE |, HIGH FREQUENCY CURRENT GAIN VCE = –5.0 V f = 100 MHz TA = 25°C 1.0 0.4 0.2 0.1 –1.0 –2.0 2 –5 –10 –20 –50 –100–200–500 –1K–2K –5K–10K IB, BASE CURRENT (µA) Figure 3. Collector Saturation Region 10 4.0 3.0 2.0 –300 mA –5.0 –10 –20 –50 –100 –200 –500 –1K 100 µs 1.0 ms –300 –200 –100 –50 –20 –10 –1.0 TA = 25°C 1.0 s TC = 25°C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE ≤ 10%) MPSA75 MPSA77 –2.0 –4.0 –6.0 –10 –20 –40 –60 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR VOLTAGE (VOLTS) Figure 4. High Frequency Current Gain Figure 5. Active Region, Safe Operating Area Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. 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