UTC MPSA42 High voltage transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MPSA42/43
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
„
DESCRIPTION
The UTC MPSA42/43 are high voltage transistors, designed for
telephone switch and high voltage switch.
„
FEATURES
*Collector-Emitter voltage:
VCEO=300V(UTC MPSA42)
VCEO=200V(UTC MPSA43)
*High current gain
*Complement to UTC MPSA92/93
*Pb-free plating product number: MPSA42L
MPSA43L
„
ORDERING INFORMATION
Normal
MPSA42-AB3-R
MPSA42-T92-B
MPSA42-T92-K
MPSA43-AB3-R
MPSA43-T92-B
MPSA43-T92-K
Ordering Number
Lead Free
MPSA42L-AB3-R
MPSA42L-T92-B
MPSA42L-T92-K
MPSA43L-AB3-R
MPSA43L-T92-B
MPSA43L-T92-K
Halogen Free
MPSA42G-AB3-R
MPSA42G-T92-B
MPSA42G-T92-K
MPSA43G-AB3-R
MPSA43G-T92-B
MPSA43G-T92-K
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Package
SOT-89
TO-92
TO-92
SOT-89
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
E
B
C
E
B
C
B
C
E
E
B
C
E
B
C
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
Tape Box
Bulk
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MPSA42/43
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER
RATINGS
UNIT
300
V
VCBO
200
V
Collector-Emitter Voltage
300
V
VCEO
200
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
Ic
500
mA
SOT-89
500
mW
Collector Dissipation (Ta=25℃)
Pc
TO-92
625
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Collector-Base Voltage
„
SYMBOL
MPSA42
MPSA43
MPSA42
MPSA43
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
SYMBOL
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
DC Current Gain
Current Gain Bandwidth Product
Collector Base Capacitance
BVCBO
Ic=100μA, IE=0
BVCEO
Ic=1mA, IB=0
BVEBO
IE=100μA, Ic=0
VCB=200V, IE=0
VCB=160V, IE=0
VEB=6V, Ic=0
VEB=4V, Ic=0
VCE=10V, Ic=1mA
VCE=10V, Ic=10mA
VCE=10V, Ic=30mA
Ic=20mA, IB=2mA
Ic=20mA, IB=2mA
VCE=20V, Ic=10mA,
f=100MHz
VCB=20V, IE=0
f=1MHz
ICBO
IEBO
hFE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
VBE(SAT)
fT
MPSA42
MPSA43
Ccb
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
TEST CONDITIONS
MIN
300
200
300
200
6
TYP
MAX
100
100
100
100
80
80
80
UNIT
V
V
V
V
V
nA
nA
nA
nA
300
0.2
0.90
50
V
V
MHz
3
4
pF
pF
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MPSA42/43
TYPICAL CHARACTERISTICS
Fig.1 DC Current Gain
10
Fig.2 Saturation Voltage
3
10
1
Ic=10*IB
10
VCE(SAT),VBE(SAT) (V)
10
2
1
10
0
10
10
0
10
1
10
-1
10
VCE(SAT)
10
-1
10
0
10
1
10
2
Collector Current, Ic(mA)
Fig.3 Capacitance
Fig.4 Current Gain
Bandwidth Product
2
1
-1
10
VBE(SAT)
0
Collector Current, Ic(mA)
IE=0
f=1MHz
10
10
-2
10
2
Current Gain Bandwidth Product (MHz)
DC Current Gain, hFE
VCE=10V
CAPACITANCE (pF)
„
NPN SILICON TRANSISTOR
10
0
10
1
10
2
Collector-Base Voltage(V)
10
10
3
3
VCE=20V
10
10
2
1
10
0
10
1
10
2
Collector Current, Ic(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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