BUZ111S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ111S 55 V 80 A 0.008 Ω TO-220 AB Q67040-S4003-A2 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 100 °C Values Unit A 80 Pulsed drain current IDpuls TC = 25 °C 320 Avalanche energy, single pulse mJ E AS ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 220 µH, Tj = 25 °C 700 Avalanche current,limited by Tjmax IAR 80 A Avalanche energy,periodic limited by Tjmax E AR 25 mJ Reverse diode dv/dt dv/dt kV/µs IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage V GS Power dissipation P tot TC = 25 °C Semiconductor Group ± 20 V W 250 1 28/Jan/1998 BUZ111S SPP80N05 Maximum Ratings Parameter Symbol Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC ≤ 0.6 Thermal resistance, junction - ambient RthJA ≤ 62 Values IEC climatic category, DIN IEC 68-1 Unit °C K/W 55 / 175 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 2.1 3 4 V GS(th) V GS=V DS, ID = 240 µA Zero gate voltage drain current V V (BR)DSS µA IDSS V DS = 50 V, V GS = 0 V, Tj = -40 °C - - 0.1 V DS = 50 V, V GS = 0 V, Tj = 25 °C - 0.1 1 V DS = 50 V, V GS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) V GS = 10 V, ID = 80 A Semiconductor Group nA IGSS - 2 0.0065 0.008 28/Jan/1998 BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 80 A Input capacitance 30 pF - 3600 4500 - 1100 1375 - 550 690 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 Ω Rise time - 25 37 - 30 45 - 65 95 - 40 60 tr V DD = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 Ω Fall time tf V DD = 30 V, VGS = 10 V, ID = 80 A RG = 2.4 Ω Gate charge at threshold V DD = 40 V, ID ≥ 0.1 A, V GS =0 to 1 V Gate charge at 7.0 V 5 - 95 140 - 125 185 V V (plateau) V DD = 40 V, ID = 80 A Semiconductor Group 3.3 Qg(total) V DD = 40 V, ID = 80 A, VGS =0 to 10 V Gate plateau voltage Qg(7) V DD = 40 V, ID = 80 A, VGS =0 to 7 V Gate charge total nC Qg(th) 3 5.45 28/Jan/1998 BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TC = 25 °C Inverse diode direct current,pulsed - - 320 V 1.25 1.8 ns trr - 105 160 µC Qrr - V R = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 80 - V R = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD V GS = 0 V, IF = 160 A Reverse recovery time ISM TC = 25 °C Inverse diode forward voltage A IS 4 0.29 0.45 28/Jan/1998 BUZ111S SPP80N05 Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 260 90 W A 220 Ptot ID 200 180 70 60 160 140 50 120 40 100 30 80 60 20 40 10 20 0 0 0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C 180 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 10 3 /I D K/W DS t = 29.0µs p = V A ZthJC 10 -1 R DS (o n) ID °C TC 10 2 100 µs 10 -2 D = 0.50 10 1 ms 10 -3 0.20 1 0.10 0.05 10 ms 10 -4 DC 0.02 single pulse 0.01 10 0 0 10 10 1 V 10 10 -5 -7 10 2 VDS Semiconductor Group 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 28/Jan/1998 BUZ111S SPP80N05 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 180 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.026 Ptot = 250W l Ω i kj h g A ID a b c d e f 0.022 VGS [V] a 4.0 140 e 120 100 d 80 60 c b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0 RDS (on) 0.020 0.018 0.016 0.014 0.012 g h i j 0.008 0.006 40 b 0.004 20 0.002 a 0 f 0.010 k VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 f e 6.5 7.0 g 7.5 k h i j 8.0 9.0 10.0 20.0 0.000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS 0 20 40 60 80 100 120 140 A 180 ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 100 I A D 60 40 20 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 28/Jan/1998 BUZ111S SPP80N05 Gate threshold voltage Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 80 A, VGS = 10 V V GS(th)= f (Tj) parameter:VGS=VDS, ID =240µA 0.026 5.0 Ω V 4.4 0.022 RDS (on) 0.020 VGS(th) 4.0 0.018 3.6 0.016 3.2 0.014 2.8 0.012 98% 2.4 0.010 typ 2.0 0.008 1.6 0.006 1.2 0.004 0.8 0.002 0.4 max typ 0.000 -60 min 0.0 -20 20 60 100 °C 180 -60 -20 20 60 100 140 V 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 3 nF A Ciss IF C 10 0 10 2 Coss Crss 10 -1 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 -2 0 5 10 15 20 25 30 V 40 VDS Semiconductor Group 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 28/Jan/1998 BUZ111S SPP80N05 Avalanche energy EAS = ƒ(Tj) parameter: ID = 80 A, VDD = 25 V RGS = 25 Ω, L = 220 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 80 A 16 750 mJ V 650 EAS 600 VGS 550 12 500 10 450 0,2 VDS max 400 0,8 VDS max 8 350 300 6 250 200 4 150 100 2 50 0 20 0 40 60 80 100 120 140 °C 180 Tj 0 20 40 60 80 100 120 140 nC 170 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 28/Jan/1998