Mitsubishi M54585P 8-unit 500ma darlington transistor array with clamp diode Datasheet

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585P and M54585FP are eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
Á High breakdown voltage (BV CEO ≥ 50V)
Á High-current driving (Ic(max) = 500mA)
Á With clamping diodes
Á Driving available with TTL output or with PMOS IC output
Á Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION








INPUT 








IN1→ 1
18 →O1 
IN2→ 2
17 →O2 

IN3→ 3
16 →O3 
IN4→ 4
15 →O4 
IN5→ 5
14 →O5 
IN6→ 6
13 →O6 
IN7→ 7
12 →O7 
IN8→ 8
11 →O8 
GND
10 →COM COMMON
FUNCTION
The M54585P and M54585FP each have eight circuits,
which are NPN Darlington transistors. Input transistors have
resistance of 2.7kΩ between the base and input pin. A spikekiller clamping diode is provided between each output pin
and GND. Output transistor emitters are all connected to the
GND pin.
Collector current is 500mA maximum. The maximum collector-emitter voltage is 50V.
The M54585FP is enclosed in a molded small flat package,
enabling space-saving design.


 OUTPUT




9
Package type 18P4G(P)
NC
APPLICATION
Drives of relays and printers, digit drives of indication elements such as LEDs and lamps, and MOS-bipolar logic IC
interfaces









INPUT 








1
20
NC
IN1→ 2
19 →O1 
IN2→ 3
18 →O2 
IN3→ 4
17 →O3 
IN4→ 5
16 →O4 
IN5→ 6
15 →O5 
IN6→ 7
14 →O6 
IN7→ 8
13 →O7 
IN8→ 9
12 →O8 
GND
11 →COM COMMON




 OUTPUT




10
Package type 20P2N-A(FP)
NC : No connection
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
2.7K
7.2K
3K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS
Symbol
(Unless otherwise noted, Ta = –20 ~ +75 °C)
Parameter
Conditions
VCEO
IC
Collector-emitter voltage
Collector current
VI
IF
Input voltage
Clamping diode forward current
VR
Pd
Clamping diode reverse voltage
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
Ta = 25°C, when mounted on board
RECOMMENDED OPERATING CONDITIONS
Symbol
VO
IC
VIH
“H” input voltage
VIL
“L” input voltage
Symbol
V (BR) CEO
Limits
typ
max
0
—
50
0
—
400
0
—
200
3.85
—
3.4
0
—
—
min
Duty Cycle
P : no more than 6%
FP : no more than 4%
Duty Cycle
P : no more than 34%
FP : no more than 20%
IC ≤ 400mA
IC ≤ 200mA
ELECTRICAL CHARACTERISTICS
mA
V
500
50
mA
V
1.79(P)/1.10(FP)
–20 ~ +75
W
°C
–55 ~ +125
°C
Unit
V
30
V
0.6
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
Test conditions
VF
IR
Clamping diode reverse current VR = 50V
h FE
DC amplification factor
II
500
–0.5 ~ +30
mA
Collector-emitter breakdown voltage ICEO = 100µA
VI = 3.85V, I C = 400mA
Collector-emitter saturation voltage
VI = 3.4V, IC = 200mA
VI = 3.85V
Input current
VI = 25V
Clamping diode forward voltage IF = 400mA
VCE (sat)
Unit
V
(Unless otherwise noted, Ta = –20 ~ +75°C)
Parameter
Output voltage
Collector current
(Current per 1 circuit when 8 circuits
are coming on simultaneously)
Ratings
–0.5 ~ +50
Output, H
Current per circuit output, L
VCE = 4V, IC = 350mA, Ta = 25°C
Limits
typ+
—
max
—
—
1.3
2.4
—
1.0
1.6
—
—
0.95
8.7
1.8
18
min
50
Unit
V
V
mA
—
1.5
2.4
V
—
—
100
1000
2500
—
µA
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
typ
max
—
12
—
ns
—
240
—
ns
min
Unit
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
INPUT
VO
50%
Measured device
50%
INPUT
RL
OPEN
OUTPUT
PG
OUTPUT
50Ω
CL
50%
50%
ton
toff
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 3.85V
(2) Input-output conditions : RL = 25Ω, VO = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TYPICAL CHARACTERISTICS
Output Saturation Voltage
Collector Current Characteristics
Thermal Derating Factor Characteristics
500
2.0
VI = 3.4V
Collector current Ic (mA)
Power dissipation Pd (W)
M54585P
1.5
M54585FP
1.0
0.5
400
300
200
Ta = 25°C
100
Ta = –20°C
Ta = 75°C
0
0
25
50
75
0
100
0
Duty-Cycle-Collector Characteristics
(M54585P)
➂
200
➃
➄
➅
➆
➇
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
0
20
40
60
Duty cycle (%)
80
2.0
100
500
Collector current Ic (mA)
Collector current Ic (mA)
➁
300
100
1.5
Duty-Cycle-Collector Characteristics
(M54585P)
➀
400
1.0
Output saturation voltage VCE (sat) (V)
Ambient temperature Ta (°C)
500
0.5
➀
400
300
➁
200
100
0
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
0
20
40
60
80
➂
➃
➄
➅
➇➆
100
Duty cycle (%)
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Duty-Cycle-Collector Characteristics
(M54585FP)
Duty-Cycle-Collector Characteristics
(M54585FP)
500
500
300
➁
➂
➃
➅➄
➆
➇
200
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 25°C
100
0
0
20
40
60
80
Collector current Ic (mA)
Collector current Ic (mA)
➀
400
400
➁
200
100
0
100
➀
300
0
20
40
Duty cycle (%)
Grounded Emitter Transfer Characteristics
VCE = 4V
Ta = 75°C
3
2
103
7
Ta = –20°C
5
Ta = 25°C
3
Collector current Ic (mA)
DC amplification factor hFE
100
5
400
300
200
Ta = 75°C
Ta = 25°C
100
Ta =–20°C
2
102 1
10
2
3
5 7 102
2
0
5 7 103
3
0
Collector current Ic (mA)
10
6
Ta = 25°C
4
Ta = 75°C
2
10
15
Input voltage VI (V)
20
25
Forward bias current IF (mA)
Ta = –20°C
5
3
4
Clamping Diode Characteristics
VI = 3.4V
0
2
500
8
0
1
Input voltage VI (V)
Input Characteristics
Input current II (mA)
80
500
VCE = 4V
7
60
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
104
➂
➃
➅➄
➇➆
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Ta = 75°C
400
300
200
Ta = 25°C
100
Ta = –20°C
Ta = 75°C
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Aug. 1999
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