NJD2873T4 Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. http://onsemi.com Features • Pb−Free Package is Available • High DC Current Gain − • • • • SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mA Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V MARKING DIAGRAM 4 MAXIMUM RATINGS 1 2 Rating 3 Symbol Value Unit VCB 50 Vdc VCEO 50 Vdc VEB 5 Vdc IC 2 3 Adc Base Current IB 0.4 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 15 0.1 W W/°C Total Device Dissipation @ TA = 25°C* Derate above 25°C PD 1.68 0.011 W W/°C NJD2873G TJ, Tstg −65 to +175 °C NJD2873RL Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current Continuous Peak Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Y WW G Characteristic Symbol Max Unit Thermal Resistance Junction−to−Case Junction−to−Ambient* RqJC RqJA 10 89.3 °C/W = Year = Work Week = Pb−Free Device ORDERING INFORMATION Device NJD2873 NJD2873RLG NJD2873T4 NJD2873T4G THERMAL CHARACTERISTICS YWW J 2873G DPAK CASE 369C STYLE 1 Package Shipping † DPAK 75 Units / Rail DPAK (Pb−Free) 75 Units / Rail DPAK 1800 Units / Reel DPAK (Pb−Free) 1800 Units / Reel DPAK 2500 Units / Reel DPAK (Pb−Free) 2500 Units / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. © Semiconductor Components Industries, LLC, 2006 November, 2006 − Rev. 8 1 Publication Order Number: NJD2873T4/D NJD2873T4 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 50 − Vdc − 100 − 100 120 40 80 360 − 360 − 0.3 − 1.2 − − 1.2 0.95 fT 65 − MHz Cob − 80 pF OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 0.5 A, VCE = 2 V) (IC = 2 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) hFE Collector−Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 A) VCE(sat) Base−Emitter Saturation Voltage (Note 1) (IC = 1 A, IB = 0.05 Adc) VBE(sat) Base−Emitter On Voltage (Note 1) (IC = 1 Adc, VCE = 2 Vdc) (IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 2) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%. 2. fT = ⎪hfe⎪• ftest. http://onsemi.com 2 NJD2873T4 TYPICAL CHARACTERISTICS PD , POWER DISSIPATION (WATTS) 25 20 15 10 5 0 0 25 50 75 100 125 150 175 200 T, TEMPERATURE (°C) Figure 1. Power Derating 1000 0.4 10 0.01 25°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 100°C 100 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE = 2.0 V −40°C 0.6 0.5 100°C 150°C 0.4 0.3 Ic/Ib = 20 175°C 0.2 0.01 0.2 0.1 Ic/Ib = 20 Figure 3. Collector−Emitter Saturation Voltage 0.9 25°C 25°C −40°C Figure 2. DC Current Gain 1.0 0.7 100°C 0 0.01 10 1.1 −40°C 150°C 0.3 IC, COLLECTOR CURRENT (AMPS) 1 1.2 0.8 175°C 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.1 VBE(on), BASE−EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 175°C 150°C 0.1 1 10 1.2 1.1 VCE = 2.0 V −40°C 1.0 25°C 0.9 100°C 150°C 175°C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 4. Base−Emitter Saturation Voltage Figure 5. Base−Emitter Voltage http://onsemi.com 3 10 10 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) NJD2873T4 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.02 RqJC(t) = r(t) qJC RqJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) 0.05 0.1 0.2 0.5 1 2 t, TIME (ms) 5 Figure 6. Thermal Response http://onsemi.com 4 10 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 20 50 100 200 NJD2873T4 PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE −T− E R 4 Z A S 1 2 3 U K F J L STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR H D 2 PL G DIM A B C D E F G H J K L R S U V Z 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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