Intersil HGTP10N40F1D 10a, 400v and 500v n-channel igbts with anti-parallel ultrafast diode Datasheet

HGTP10N40F1D,
HGTP10N50F1D
10A, 400V and 500V N-Channel IGBTs
with Anti-Parallel Ultrafast Diodes
April 1995
Features
Package
• 10A, 400V and 500V
JEDEC TO-220AB
• Latch Free Operation
EMITTER
• Typical Fall Time < 1.4µs
COLLECTOR
GATE
• High Input Impedance
• Low Conduction Loss
COLLECTOR
(FLANGE)
• Anti-Parallel Diode
• tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The
device has the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between +25oC
and +150oC. The diode used in parallel with the IGBT is an
ultrafast (tRR < 60ns) with soft recovery characteristic.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
IGBTs are ideal for many high voltage switching applications
operating at frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power
supplies and drivers for solenoids, relays and contactors.
G
E
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTP10N40F1D
TO-220AB
10N40F1D
HGTP10N50F1D
TO-220AB
10N50F1D
NOTE: When ordering, use the entire part number
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector-Gate Voltage RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCGR
Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . IC25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . IC90
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Diode Forward Current at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF25
at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF90
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
NOTE:
HGTP10N40F1D
400
400
12
10
12
±20
16
10
75
0.6
-55 to +150
260
HGTP10N50F1D
500
500
12
10
12
±20
16
10
75
0.6
-55 to +150
260
UNITS
V
V
A
A
A
V
A
A
W
W/oC
oC
oC
1. TJ = +150oC, Min. RGE = 25Ω without latch.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
3-25
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
2751.2
Specifications HGTP10N40F1D, HGTP10N50F1D
Electrical Specifications
TC = +25oC, Unless Otherwise Specified
LIMITS
HGTP10N40F1D
PARAMETERS
SYMBOL
TEST CONDITIONS
MAX
MIN
MAX
UNITS
-
500
-
V
Collector-Emitter Breakdown
Voltage
BVCES
IC = 1.25mA, VGE = 0V
400
Gate Threshold Voltage
VGE(TH)
VGE = VCE, IC = 1mA
Zero Gate Voltage Collector
Current
ICES
Gate-Emitter Leakage Current
Collector-Emitter On-Voltage
IGES
VCE(ON)
HGTP10N50F1D
MIN
2.0
4.5
2.0
4.5
V
TJ = +150oC, VCE = 400V
-
1.25
-
-
mA
TJ = +150oC, VCE = 500V
-
-
-
1.25
mA
VGE = ±20V, VCE = 0V
-
100
-
100
nA
TJ = +150oC, IC = 5A, VGE = 10V
-
2.5
-
2.5
V
TJ =
+150oC,
-
2.2
-
2.2
V
TJ = +25oC, IC = 5A, VGE = 10V
IC = 5A, VGE = 15V
-
2.5
-
2.5
V
TJ = +25oC, IC = 5A, VGE = 15V
-
2.2
-
2.2
V
VGEP
IC = 5A, VCE = 10V
5.3 (Typ)
V
On-State Gate Charge
QG(ON)
IC = 5A, VCE = 10V
13.4 (Typ)
nC
Turn-On Delay Time
tD(ON)
Resistive Load, IC = 5A,
VCE = 400V, RL = 80Ω,
TJ = +150oC, VGE = 10V,
RG = 25Ω
Gate-Emitter Plateau Voltage
Rise Time
tRI
Turn-Off Delay Time
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = WOFF x
Frequency)
Turn-Off Delay Time
130 (Typ)
ns
1400 (Typ)
ns
WOFF
0.64 (Typ)
mJ
tD(OFF)I
Fall Time
ns
ns
tFI
tD(OFF)
Fall Time
45 (Typ)
35 (Typ)
tFI
Inductive Load (See Figure 13),
IC = 5A, VCE(CLP) = 400V, RL =
80Ω, L = 50µH, TJ = +150oC, VGE =
10V, RG = 25Ω
-
375
-
375
ns
-
1200
-
1200
ns
-
1.2
-
1.2
mJ
Turn-Off Energy Loss Per Cycle
(Off Switching Dissipation = WOFF x
Frequency)
WOFF
Thermal Resistance Junction-toCase (IGBT)
RθJC
-
1.67
-
1.67
Thermal Resistance of Diode
RθJC
-
2.0
-
2.0
oC/W
Diode Forward Voltage
VEC
IEC = 10A
-
1.7
-
1.7
V
Diode Reverse Recovery Time
tRR
IEC = 10A, dIEC/dt = 100A/µs
-
60
-
60
ns
o
C/W
Typical Performance Curves
10
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
PULSE TEST, VCE = 10V
PULSE DURATION = 250µs
DUTY CYCLE < 2%
TC = -55oC
8
6
4
TC = -55oC
TC = +25oC
2
TC = +150oC
VGE = 15V
10
12
8
VGE = 6.0V
VGE = 10V
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%
TC = +25oC
6
VGE = 5.5V
VGE = 5.0V
4
VGE = 4.5V
2
VGE = 4.0V
0
0
0
2
4
6
8
0
10
2
4
6
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VGE , GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TYPICAL TRANSFER CHARACTERISTICS
FIGURE 2. TYPICAL SATURATION CHARACTERISTICS
3-26
10
HGTP10N40F1D, HGTP10N50F1D
Typical Performance Curves (Continued)
18
o
TJ = +150 C
3
ICE, DC COLLECTOR CURRENT (A)
VCE(ON), SATURATION VOLTAGE (V)
4
VGE = 10V
2
VGE = 15V
1
16
VGE = 15V
14
12
10
VGE = 10V
8
6
4
2
0
0
1
10
+25
100
FIGURE 3. SATURATION VOLTAGE vs COLLECTOR-EMITTER
CURRENT (TYPICAL)
0.5
tD(OFF)I , TURN-OFF DELAY (µs)
C, CAPACITANCE (pF)
+125
+150
L = 50µH
800
600
CISS
400
200
COSS
CRSS
0.4
0.3
VGE = 15V, RG = 50Ω
0.2
VGE = 10V, RG = 50Ω
VGE = 15V, RG = 25Ω
VGE = 10V, RG = 25Ω
0.1
0.0
5
10
15
20
25
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
10
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 5. CAPACITANCE vs COLLECTOR-TO-EMITTER
VOLTAGE (TYPICAL)
FIGURE 6. TURN-OFF DELAY vs COLLECTOR-TO-EMITTER
CURRENT (TYPICAL)
2
WOFF , TURN-OFF SWITCHING LOSS (mJ)
10
TJ = +150oC, VGE = 10V
RG = 25Ω, L = 50µH
tFI, FALL TIME (µs)
+100
TJ +150oC, VCE = 400V
f = 1MHz
0
+75
FIGURE 4. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
1000
0
+50
TC , CASE TEMPERATURE (oC)
ICE, COLLECTOR-EMITTER CURRENT (A)
1
VCE = 400V
0
TJ = +150oC, VGE = 10V
RG = 25Ω, L = 50µH
VCE = 400V
1.0
VCE = 200V
0.1
1
10
100
1
10
100
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. FALL TIME vs COLLECTOR-TO-EMITTER CURRENT
(TYPICAL)
3-27
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT (TYPICAL)
HGTP10N40F1D, HGTP10N50F1D
TJ = +150oC, TC = +100oC, VGE = 10V
RG = 25Ω, PT = 75W, L = 50µH
VCE = 200V
100
fMAX1 = 0.05/tD(OFF)I
fMAX2 = (PD - PC)/WOFF
VCE = 400V
10
1
1
10
100
ICE, COLLECTOR-EMITTER CURRENT (A)
NOTE:
PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
500
RL = 100Ω
IG(REF) = 0.33mA
GATEEMITTER
VOLTAGE
VGE = 10V
VCC = BVCES
375
VCC = BVCES
250
5
0.75 BVCES 0.75 BVCES
125
0.50 BVCES 0.50 BVCES
0.25 BVCES 0.25 BVCES
COLLECTOR-EMITTER VOLTAGE
0
0
IG(REF)
20
FIGURE 9. MAXIMUM OPERATING FREQUENCY vs COLLECTOR
CURRENT AND VOLTAGE (TYPICAL)
IG(REF)
80
TIME (µs)
IG(ACT)
IG(ACT)
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS AT
CONSTANT GATE CURRENT
tRR, REVERSE RECOVERY TIME (ns)
IEC , EMITTER-COLLECTOR CURRENT (A)
100
TJ = +150oC
TJ = +100oC
10
1.0
TJ = +25oC
TJ = -50oC
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
dIEC/dt ≥ 100A/µs
VR = 30V, TJ = +25oC
60
50
40
30
20
10
2.0
0
2
4
6
8
10
12
14
16
IEC , EMITTER-COLLECTOR CURRENT (A)
VEC , EMITTER-COLLECTOR VOLTAGE (V)
FIGURE 11. TYPICAL FORWARD VOLTAGE
FIGURE 12. TYPICAL REVERSE RECOVERY TIME
Test Circuit
RL
L = 50µH
1/RG = 1/RGEN + 1/RGE
VCC
400V
RGEN = 50Ω
20V
0V
RGE = 50Ω
FIGURE 13. INDUCTIVE SWITCHING TEST CIRCUIT
3-28
10
+
-
VGE, GATE-EMITTER VOLTAGE (V)
1000
VCE, COLLECTOR-EMITTER VOLTAGE (V)
fOP , MAXIMUM OPERATING FREQUENCY (KHz)
Typical Performance Curves (Continued)
HGTP10N40F1D, HGTP10N50F1D
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