ETC1 CMT01N60GN92 Power field effect transistor Datasheet

CMT01N60
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
‹
Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability
‹
Avalanche Energy Specified
without degrading performance over time. In addition, this
‹
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
‹
Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a
‹
IDSS and VDS(on) Specified at Elevated Temperature
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
3
D
SOURCE
SOURCE
2
DRAIN
DRAIN
1
GATE
GATE
SOURCE
TO-92
Front View
DRAIN
TO-252
Front View
GATE
TO-251
Front View
G
S
N-Channel MOSFET
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current - Continuous
- Pulsed
Gate-to-Source Voltage - Continue
- Non-repetitive
Total Power Dissipation
Symbol
Value
Unit
A
ID
1.0
IDM
9.0
VGS
±30
V
VGSM
±40
V
PD
TO-251/252
W
50
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
TJ, TSTG
-55 to 150
℃
EAS
20
mJ
θJC
1.0
℃/W
θJA
62.5
TL
260
(VDD = 100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25Ω)
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
2005/12/05 Rev. 1.5
Champion Microelectronic Corporation
℃
Page 1
CMT01N60
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
Package
CMT01N60N251
TO-251
CMT01N60N252
TO-252
CMT01N60N92
TO-92
CMT01N60GN251*
TO-251
CMT01N60GN252*
TO-252
CMT01N60GN92*
*Note: G : Suffix for Pb Free Product
TO-92
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT01N60
Characteristic
Drain-Source Breakdown Voltage
Symbol
Min
V(BR)DSS
600
Typ
Max
Units
V
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
IDSS
mA
(VDS = 600 V, VGS = 0 V)
0.1
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
0.3
Gate-Source Leakage Current-Forward
IGSSF
100
nA
IGSSR
100
nA
4.0
V
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
VGS(th)
Gate Threshold Voltage
2.0
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) *
RDS(on)
Forward Transconductance (VDS ≧ 50 V, ID = 0.5A) *
gFS
Input Capacitance
Ciss
(VDS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz)
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
(VDD = 300 V, ID = 1.0 A,
VGS = 10 V,
Turn-Off Delay Time
RG = 18Ω) *
Fall Time
Total Gate Charge
Gate-Source Charge
(VDS = 400 V, ID = 1.0 A,
Gate-Drain Charge
VGS = 10 V)*
Internal Drain Inductance
8.0
0.5
Ω
mhos
210
Coss
28
pF
pF
Crss
4.2
pF
td(on)
8
tr
21
ns
ns
td(off)
18
ns
tf
24
Qg
8.5
Qgs
1.8
nC
nC
Qgd
4
nC
LD
4.5
nH
LS
7.5
nH
ns
14
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 1.0 A, VGS = 0 V,
dIS/dt = 100A/μs)
VSD
1.5
ton
**
trr
350
V
ns
500
ns
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
2005/12/05 Rev. 1.5
Champion Microelectronic Corporation
Page 2
CMT01N60
POWER FIELD EFFECT TRANSISTOR
TYPICAL ELECTRICAL CHARACTERISTICS
2005/12/05 Rev. 1.5
Champion Microelectronic Corporation
Page 3
CMT01N60
POWER FIELD EFFECT TRANSISTOR
2005/12/05 Rev. 1.5
Champion Microelectronic Corporation
Page 4
CMT01N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-251
2005/12/05 Rev. 1.5
Champion Microelectronic Corporation
Page 5
CMT01N60
POWER FIELD EFFECT TRANSISTOR
PACKAGE DIMENSION
TO-252
2005/12/05 Rev. 1.5
Champion Microelectronic Corporation
Page 6
CMT01N60
POWER FIELD EFFECT TRANSISTOR
2005/12/05 Rev. 1.5
Champion Microelectronic Corporation
Page 7
CMT01N60
POWER FIELD EFFECT TRANSISTOR
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications.
Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F-1, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
11F, No. 306-3, SEC. 1, Ta Tung Road,
Hsichih, Taipei Hsien 221, Taiwan
2005/12/05 Rev. 1.5
T E L : +886-2-8692 1591
F A X : +886-2-8692 1596
Champion Microelectronic Corporation
Page 8
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