AMD AM29F010

SUPPLEMENT
Am29F010 Known Good Die
1 Megabit (128 K x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 5.0 V ± 10% for read, erase, and program
operations
— Simplifies system-level power requirements
■ High performance
— 90 or 120 ns maximum access time
■ Low power consumption
— 30 mA max active read current
■ Embedded Algorithms
— Embedded Erase algorithm automatically
pre-programs and erases the chip or any
combination of designated sector
— Embedded Program algorithm automatically
programs and verifies data at specified address
■ Minimum 100,000 program/erase cycles
guaranteed
■ Compatible with JEDEC standards
— 50 mA max program/erase current
— Pinout and software compatible with
single-power-supply flash
— <25 µA typical standby current
— Superior inadvertent write protection
■ Flexible sector architecture
— Eight uniform sectors
— Any combination of sectors can be erased
— Supports full chip erase
■ Sector protection
— Hardware-based feature that disables/reenables program and erase operations in any
combination of sectors
— Sector protection/unprotection can be
implemented using standard PROM
programming equipment
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■ Data Polling and Toggle Bits
— Provides a software method of detecting
program or erase cycle completion
■ Tested to datasheet specifications at
temperature
■ Quality and reliability levels equivalent to
standard packaged components
Publication# 21116 Rev: B Amendment/0
Issue Date: January 1998
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29F010 in Known Good Die (KGD) form is a 1
Mbit, 5.0 Volt-only Flash memory. AMD defines KGD as
standard product in die form, tested for functionality
and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.
Am29F010 Features
The Am29F010 device is organized as eight uniform
sectors of 16 Kbytes each for flexible erase capability.
This device is designed to be programmed in-system
with the standard system 5.0 Volt V CC supply. A power
supply providing 12.0 Volt V PP is not required for
program or erase operations.
The Am29F010 in KGD form offers access times of 90
ns and 120 ns, allowing high speed microprocessors to
operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE) controls.
The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents
serve as input to an internal state machine that controls
the erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the programming and erase operations. Reading data out of
the device is similar to reading from other Flash or
EPROM devices.
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase command sequence. This invokes the Embedded Erase
algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the device is ready
to read array data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is erased
when shipped from the factory.
The hardware data protection measures include a
low VCC detector automatically inhibits write operations
during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory,
and is implemented using standard EPROM programmers.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F010 data sheet, publication number
16736, for full electri cal specifications for the
Am29F010 in KGD form.
Device programming occurs by executing the program
command sequence. This invokes the Embedded
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S U P P L E M E N T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F010 KGD
Speed Option (VCC = 5.0 V ± 10%)
-90
-120
Max Access Time, tACC (ns)
90
120
Max CE# Access, tCE (ns)
90
120
Max OE# Access, tOE (ns)
35
50
DIE PHOTOGRAPH
Orientation relative to
top left corner of
Gel-Pak
Orientation relative to
leading edge of tape
and reel
DIE PAD LOCATIONS
7 6
5 4 3
2
1
30
29 28 27 26
25
8
AMD logo location
9
24
10 11 12 13 14 15 16 17 18 19 20 21 22 23
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S U P P L E M E N T
PAD DESCRIPTION
Pad Center (mils)
Pad
Pad Center (millimeters)
Signal
X
Y
X
Y
1
VCC
0.00
0.00
0.00
0.00
2
A16
–33.20
–1.30
–0.84
–0.03
3
A15
–41.60
–1.30
–1.06
–0.03
4
A12
–49.90
–1.30
–1.27
–0.03
5
A7
–58.30
–1.30
–1.48
–0.03
6
A6
–66.60
–1.30
–1.69
–0.03
7
A5
–75.00
–1.30
–1.91
–0.03
8
A4
–74.40
–10.50
–1.89
–0.27
9
A3
–75.60
–158.20
–1.92
–4.02
10
A2
–69.40
–166.80
–1.76
–4.24
11
A1
–56.10
–166.80
–1.42
–4.24
12
A0
–46.10
–166.80
–1.17
–4.24
13
D0
–36.30
–166.90
–0.92
–4.24
14
D1
–25.90
–166.90
–0.66
–4.24
15
D2
–13.30
–166.90
–0.34
–4.24
16
VSS
–4.30
–166.90
–0.11
–4.24
17
D3
4.70
–166.90
0.12
–4.24
18
D4
17.30
–166.90
0.44
–4.24
19
D5
27.60
–166.90
0.70
–4.24
20
D6
40.20
–166.90
1.02
–4.24
21
D7
50.60
–166.90
1.29
–4.24
22
CE#
60.60
–166.80
1.54
–4.24
23
A10
74.00
–166.80
1.88
–4.24
24
OE#
81.40
–158.20
2.07
–4.02
25
A11
80.20
–10.40
2.04
–0.26
26
A9
80.80
–1.30
2.05
–0.03
27
A8
72.40
–1.30
1.84
–0.03
28
A13
64.10
–1.30
1.63
–0.03
29
A14
55.70
–1.30
1.41
–0.03
30
WE#
47.40
–1.30
1.20
–0.03
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
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S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD KGD products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
Am29F010
-90
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing
process and product technology reflected in this
document. It is entered in the revision field of AMD
standard product nomenclature.
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)
PACKAGE TYPE AND MINIMUM ORDER QUANTITY
DP = Waffle Pack
245 die per 5 tray stack
DG =
Gel-Pak® Die Tray
486 die per 6 tray stack
DT =
Surftape™ (Tape and Reel)
2500 per 7-inch reel
DW =
Gel-Pak® Wafer Tray (sawn wafer on frame)
Call AMD sales office for minimum order quantity
SPEED OPTION
See Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F010 Known Good Die
1 Megabit (128 K x 8-Bit) CMOS Flash Memory—Die Revision 1
5.0 Volt-only Program and Erase
Valid Combinations
Am29F010-90
Am29F010-120
1/13/98
DPC 1, DPI 1, DPE 1,
DGC 1, DGI 1, DGE 1,
DTC 1, DTI 1, DTE 1,
DWC 1, DWI 1, DWE 1
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F010 Known Good Die
5
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29F010 product qualification database supplement
for KGD. AMD implements quality assurance procedures throughout the product test flow. In addition, an
Wafer Sort 1
Bake
24 hours at 250°C
Wafer Sort 2
Wafer Sort 3
High Temperature
Packaging for Shipment
off-line quality monitoring program (QMP) further guarantees AMD quality standards are met on Known Good
Die products. These QA procedures also allow AMD to
produce KGD products without requiring or implementing burn-in.
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Shipment
Figure 1. AMD KGD Product Test Flow
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S U P P L E M E N T
PHYSICAL SPECIFICATIONS
MANUFACTURING INFORMATION
Die dimensions . . . . . . . . . . . . . . 174 mils x 189 mils
4.42 mm x 4.80 mm
Manufacturing and Test. . . . . . . . . Fab 14, Austin, TX
Die Thickness . . . . . . . . . . . . . ~20 mils or ~0.51 mm
Preparation for Shipment . . . . . . . . Penang, Malaysia
Bond Pad Size . . . . . . . . . . . . . . 4.47 mils x 4.47 mils
113.48 µm x 113.48 µm
Fabrication Process . . . . . . . . . . . . . . . . . CS19AFDS
Pad Area Free of Passivation . . . . . . . . . .19.98 mils2
12,878 µm2
Manufacturing ID. . . . . . . . . . . . . . . . . . . . . . 98108AK
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .30
SPECIAL HANDLING INSTRUCTIONS
Bond Pad Metalization . . . . . . . . . . . . . . . . . . Al/Si/Cu
Processing
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded (optional)
DC OPERATING CONDITIONS
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250°C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
VCC (Supply Voltage) . . . . . . . . . . . . . . .4.5 V to 5.5 V
Storage
Junction Temperature Under Bias . .TJ (max) = 130°C
For Read-only . . . . . . . . . . .TJ (max) = 140°C
Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all
standard ESD handling procedures.
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
Operating Temperature . . . Commercial 0°C to +70°C
Industrial –40°C to +85°C
Extended –55°C to +125°C
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S U P P L E M E N T
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to AMD Products under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants articles of its manufacture against
defective materials or workmanship for a period of
ninety (90) days from date of shipment. This warranty
does not extend beyond AMD’s customer, and does
not extend to die which has been affixed onto a board
or substrate of any kind. The liability of AMD under this
warranty is limited, at AMD’s option, solely to repair or
to replacement with equivalent articles, or to make an
appropriate credit adjustment not to exceed the original
sales price, for articles returned to AMD, provided that:
(a) The Buyer promptly notifies AMD in writing of each
and every defect or nonconformity in any article for
which Buyer wishes to make a warranty claim against
AMD; (b) Buyer obtains authorization from AMD to
return the article; (c) the article is returned to AMD,
transportation charges paid by AMD, F.O.B. AMD’s factory; and (d) AMD’s examination of such article discloses to its satisfaction that such alleged defect or
nonconformity actually exists and was not caused by
negligence, misuse, improper installation, accident or
unauthorized repair or alteration by an entity other than
AMD. The aforementioned provisions do not extend
the original warranty period of any article which has
either been repaired or replaced by AMD.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’S
PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYERS SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING ARTICLES AND AMD
S HA LL N OT IN AN Y EV EN T BE LIAB LE FOR
DAMAGES BY REASON OF FAILURE OF ANY
PRODUCT TO FUNCTION PROPERLY OR FOR ANY
SPECIAL, INDIRECT, CONSEQUENTIAL, INCIDENTAL OR EXEMPLARY DAMAGES, INCLUDING
BUT NOT LIMITED TO, LOSS OF PROFITS, LOSS
OF USE OR COST OF LABOR BY REASON OF THE
FACT THAT SUCH ARTICLES SHALL HAVE BEEN
DEFECTIVE OR NON CONFORMING.
Buyer agrees that it will make no warranty representations to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty. Buyer assumes all responsibility for
successful die prep, die attach and wire bonding processes. Due to the unprotected nature of the AMD
Products which are the subject hereof, AMD assumes
no responsibility for environmental effects on die.
AMD products are not designed or authorized for use
as components in life support appliances, devices or
systems where malfunction of a product can reasonably be expected to result in a personal injury. Buyer’s
use of AMD products for use in life support applications
is at Buyer’s own risk and Buyer agrees to fully indemnify AMD for any damages resulting in such use or
sale.
REVISION SUMMARY FOR AM29F010
KNOWN GOOD DIE
Formatted to match current template. Updated Distinctive Characteristics and General Description sections
using the current main data sheet.
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
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