Preliminary Datasheet CR08AS-12A 600V - 0.8A - Thyristor Low Power Use R07DS0489EJ0300 Rev.3.00 May 22, 2013 Features • Non-Insulated Type • Planar Type • Surface Mounted type • IT (AV) : 0.8 A • VDRM : 600 V • IGT: 100 μA Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK) 1 2 2, 4 3 3 4 1. 2. 3. 4. Cathode Anode Gate Anode 1 Applications Solid state relay, strobe flasher, igniter, and hybrid IC Maximum Ratings Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Note1 DC off-state voltage Note1 Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Mass Voltage class Symbol Unit 12 VRRM VRSM VR(DC) VDRM VD(DC) 600 720 480 600 480 Symbol IT(RMS) IT(AV) Ratings 1.26 0.8 Unit A A ITSM 10 A I2 t 0.42 A2 s PGM PG(AV) VFGM VRGM IFGM Tj Tstg — 0.5 0.1 6 6 0.3 – 40 to +125 – 40 to +125 50 W W V V A °C °C mg V V V V V Conditions Commercial frequency, sine half wave Note2 180° conduction, Ta=51°C 60Hz sine half wave, 1full cycle, peak value, non-repetitive Value corresponding to 1cycle of half wave 60Hz, surge on-state current Typical value Notes: 1. With gate to cathode resistance RGK = 1 kΩ R07DS0489EJ0300 Rev.3.00 May 22, 2013 Page 1 of 7 CR08AS-12A Preliminary Electrical Characteristics Parameter Repetitive peak reverse current Symbol IRRM Min. — Typ. — Max. 0.5 Unit mA Repetitive peak off-state current IDRM — — 0.5 mA On-state voltage VTM — — 1.5 V Gate trigger voltage VGT — — 0.8 V Gate non-trigger voltage VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM RGK = 1 kΩ Gate trigger current IGT 1 — 100 μA Tj = 25°C, VD = 6 V, Note3 IT = 0.1 A Holding current IH — 1.5 3 mA Rth(j-a) — — 65 °C/W Tj = 25°C, VD = 12 V RGK = 1 kΩ Junction to ambient Note2 Thermal resistance Test conditions Tj = 125°C, VRRM applied RGK = 1 kΩ Tj = 125°C, VDRM applied RGK = 1 kΩ Tj = 25°C, ITM = 2.5 A instantaneous value Tj = 25°C, VD = 6 V, IT = 0.1 A Note3 Notes: 2. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm). 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1kΩ Switch 2 60Ω TUT V1 6V DC VGT Switch 1 : IGT measurement Switch 2 : VGT measurement (Inner resistance of voltage meter is about 1kΩ) R07DS0489EJ0300 Rev.3.00 May 22, 2013 Page 2 of 7 CR08AS-12A Preliminary Performance Curves Maximum On-State Characteristics 10 Surge On-State Current (A) Ta = 25°C 101 100 1 2 3 4 Gate Voltage (V) 101 102 Gate Trigger Current vs. Junction Temperature PGM = 0.5W IGT = 100μA (Tj = 25°C) 10−1 VGD = 0.2V 10−1 IFGM = 0.3A 100 101 102 103 Typical Example 102 101 100 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to ambient) 1.0 Gate Trigger Voltage (V) 2 Gate Characteristics PG(AV) = 0.1W VGT = 0.8V 10−2 10−2 4 Conduction Time (Cycles at 60Hz) VFGM = 6V 100 6 On-State Voltage (V) 102 101 8 0 100 5 × 100 (%) 0 Gate Trigger Current (Tj = t°C) Gate Trigger Current (Tj = 25°C) 10−1 Distribution 0.8 Typical Example 0.6 0.4 0.2 0 –40 –20 0 20 40 60 80 100 120 Junction Temperature (°C) R07DS0489EJ0300 Rev.3.00 May 22, 2013 Transient Thermal Impedance (°C/W) On-State Current (A) 102 Rated Surge On-State Current 100 101 103 25×25×t0.7 Aluminum Board 102 103 10−1 100 102 101 100 10−3 10−2 Time (s) Page 3 of 7 CR08AS-12A Preliminary Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Half Wave) 160 θ = 30° 60° 90° 120° 180° 1.4 1.2 1.0 0.8 0.6 θ 0.4 360° 0.2 0 Resistive, inductive loads 0 Ambient Temperature (°C) Average Power Dissipation (W) 1.6 60 θ = 30° 40 90° 180° 60° 120° 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Half Wave) Maximum Average Power Dissipation (Single-Phase Full Wave) 1.6 θ 360° 100 80 65°C/W 60 90°C/W 40 20 R th(j–a) = 200°C/W 0 Average Power Dissipation (W) Ambient Temperature (°C) 80 Average On-State Current (A) θ = 30° 60° 90° 120° 180° 1.4 1.2 1.0 0.8 0.6 0.4 θ 0.2 360° θ Resistive loads 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) Average On-State Current (A) Allowable Ambient Temperature vs. Average On-State Current (Single-Phase Full Wave) Maximum Average Power Dissipation (Rectangular Wave) 1.6 25×25×t0.7 140 Aluminum Board θ θ 360° 120 Resistive loads Natural convection 100 80 60 40 60° 120° θ = 30° 90° 180° 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) R07DS0489EJ0300 Rev.3.00 May 22, 2013 Average Power Dissipation (W) 160 Ambient Temperature (°C) Resistive, inductive loads Natural convection 100 Average On-State Current (A) Resistive, inductive loads 140 Natural convection θ = 180° 120 0 θ 360° 120 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 160 0 25×25×t0.7 140 Aluminum Board 90° 180° θ = 30° 60° 120° 270° DC 1.4 1.2 1.0 0.8 0.6 θ 0.4 360° 0.2 0 Resistive, inductive loads 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Average On-State Current (A) Page 4 of 7 CR08AS-12A Preliminary Allowable Ambient Temperature vs. Average On-State Current (Rectangular Wave) × 100 (%) 100 Resistive, inductive loads Natural convection 80 60 20 90° 180° DC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 120 100 RGK = 1kΩ 80 60 40 20 0 –40 0 40 80 120 160 Breakover Voltage vs. Gate to Cathode Resistance Breakover Voltage vs. Rate of Rise of Off-State Voltage Typical Example 100 80 60 40 20 Tj = 125°C 101 Typical Example 140 Junction Temperature (°C) 120 0 10−1 160 Average On-State Current (A) × 100 (%) 0 100 101 102 Breakover Voltage (dv/dt = vV/μs) Breakover Voltage (dv/dt = 1V/μs) × 100 (%) Breakover Voltage (RGK = rkΩ) Breakover Voltage (RGK = 1kΩ) θ = 30° 60° 120° 270° 160 Typical Example 140 Tj = 125°C RGK = 1kΩ 120 100 80 60 40 20 0 0 10 101 102 103 Gate to Cathode Resistance (kΩ) Rate of Rise of Off-State Voltage (V/μs) Holding Current vs. Junction Temperature Holding Current vs. Gate to Cathode Resistance Distribution Typical Example IGT(25°C) = 35μA 100 10−1 RGK = 1kΩ 10−2 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) R07DS0489EJ0300 Rev.3.00 May 22, 2013 × 100 (%) 40 Breakover Voltage (Tj = t°C) Breakover Voltage (Tj = 25°C) 360° 0 Holding Current (mA) θ 120 Holding Current (RGK = rkΩ) Holding Current (RGK = 1kΩ) Ambient Temperature (°C) 160 25×25×t0.7 140 Aluminum Board Breakover Voltage vs. Junction Temperature 600 Typical Example 500 400 300 200 100 Tj = 25°C 0 −1 10 100 101 102 Gate to Cathode Resistance (kΩ) Page 5 of 7 CR08AS-12A Preliminary Turn-On Time vs. Gate Current Turn-Off Time vs. Junction Temperature 102 40 VD = 100V RL = 47Ω RGK = 1kΩ Ta = 25°C 101 100 VD = 50V, VR = 50V 35 IT = 2A, RGK = 1kΩ Turn-Off Time (μs) Turn-On Time (μs) Typical Example 30 Typical Example 25 Distribution 20 15 10 5 101 0 102 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Repetitive Peak Reverse Voltage vs. Junction Temperature Gate Trigger Current vs. Gate Current Pulse Width Typical Example 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) × 100 (%) 160 100 104 Gate Trigger Current (tw) Gate Trigger Current (DC) Repetitive Peak Reverse Voltage (Tj = t°C) Repetitive Peak Reverse Voltage (Tj = 25°C) × 100 (%) 10−1 −1 10 103 Typical Example VD = 6V RL = 60Ω Ta = 25°C 102 101 0 10 101 102 103 Gate Current Pulse Width (μs) Thermal Impedance vs. Board Dimensions Thermal resistance (°C/W) 320 280 240 Without Epoxy Plate 200 160 120 80 t0.7 Aluminum Board 40 10×10 Epoxy Plate With Copper Foil 0 0 10 20 30 40 50 60 70 80 Board Dimensions (mm) Regular Square One Side R07DS0489EJ0300 Rev.3.00 May 22, 2013 Page 6 of 7 CR08AS-12A Preliminary Package Dimensions 1.5 1.5 3.0 2.5 ± 0.1 4.25 Max 0.53 Max 0.48 Max MASS[Typ.] 0.050g 1.5 ± 0.1 0.44 Max 0.8 Min φ1 0.4 4.5 ± 0.1 1.8 Max Previous Code UPAK / UPAKV Unit: mm (1.5) 0.44 Max (0.2) RENESAS Code PLZZ0004CA-A (2.5) JEITA Package Code SC-62 (0.4) Package Name UPAK Ordering Information Orderable Part Number CR08AS-12A-T14 #B10 Packing Embossed Tape Quantity 4000 pcs. 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