Hittite HMC261 Gaas mmic medium power distributed amplifier, 20 - 40 ghz Datasheet

HMC261
v01.0500
MICROWAVE CORPORATION
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
AMPLIFIERS - CHIP
1
Typical Applications
Features
The HMC261 is ideal for:
Stable Gain vs. Temperature: 14dB ± 1.5dB
• MMW Point-to-Point Radios
High Reverse Isolation: 40 ~ 50 dB
• LMDS
P1dB Output Power: +12 dBm
• VSAT
Small Size: 1.3mm x 1.7mm
• SATCOM
General Description
Functional Diagram
The HMC261 chip is a GaAs MMIC distributed
amplifier which covers the frequency range of 20
to 40 GHz. The chip can easily be integrated into
Multi-Chip Modules (MCMs) due to its small (2.21
mm2) size. The chip utilizes a GaAs PHEMT process, operating from a single bias supply of + 3 to
+4V with a P1dB output power of +12 dBm. All data
is with the chip in a 50 ohm test fixture connected
via 0.025 mm (1 mil) diameter wire bonds of minimal
length 0.31 mm (<12 mils). The HMC261 may be
used to drive the LOs of HMC mixers such as the
HMC203, HMC292, HMC294, or HMC329.
Electrical Specifications, TA = +25° C, Vdd = +4V
Parameter
Min.
Frequency Range
1-2
Typ.
Max.
Min.
20 - 40
Gain
8
13
Input Return Loss
3
Output Return Loss
Typ.
Max.
27 - 32
18
Units
GHz
11
14
14
dB
9
6
8
dB
4
10
7
8
dB
Reverse Isolation
32
45
40
45
dB
Output Power for 1 dB Compression (P1dB)
8
12
9
12
dBm
S a t u r a t e d O u t p u t Po w e r ( P s a t )
11
13
11
13
dBm
Output Third Order Intercept (IP3)
20
23
20
23
dBm
Noise Figure
7.5
13
7
10
dB
Supply Current (ldd)
75
90
75
90
mA
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
MICROWAVE CORPORATION
HMC261
v01.0500
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
MMIC SUB-HARMONICALLY
PUMPED
MIXER @
17Vdd
- 25
GHz
GainGaAs
vs. Temperature
@ Vdd = +4V
Gain
vs. Temperature
= +3V
20
20
18
18
-55 C
16
12
10
8
+85 C
6
12
10
8
+85 C
6
+25 C
4
4
2
2
0
+25 C
0
15
20
25
30
35
40
15
20
FREQUENCY (GHz)
Return Loss @ Vdd = +4V
0
0
-2
S11 (Input)
35
40
35
40
35
40
S11 (Input)
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
-4
-6
-8
-10
-12
-14
S22 (Output)
-6
-8
-10
-12
-14
S22 (Output)
-16
-18
-18
-20
-20
15
20
25
30
35
40
15
20
FREQUENCY (GHz)
25
30
FREQUENCY (GHz)
Reverse Isolation @ Vdd = +3V
Reverse Isolation @ Vdd = +4V
0
0
-10
-10
REVERSE ISOLATION (dB)
REVERSE ISOLATION (dB)
30
Return Loss @ Vdd = +3V
-2
-16
25
FREQUENCY (GHz)
AMPLIFIERS - CHIP
14
GAIN (dB)
GAIN (dB)
-55 C
16
14
1
-20
-30
-40
-50
-60
-20
-30
-40
-50
-60
-70
-70
15
20
25
30
FREQUENCY (GHz)
35
40
15
20
25
30
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1-3
HMC261
v01.0500
MICROWAVE CORPORATION
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
1
P1dB Output Power vs.
Temperature @ Vdd = +4V
Noise Figure vs. Vdd
15
20
14
18
P1dB OUTPUT (dBm)
Noise Figure (dB)
12
11
10
9
Vdd= +4V
8
-55C
14
12
10
8
+85C
6
4
6
Vdd= +3V
2
5
20
22
24
26
28
30
32
34
36
38
0
40
20
22
24
26
FREQUENCY (GHz)
28
30
32
34
36
38
40
34
36
38
40
FREQUENCY (GHz)
Output IP3 vs.
Temperature @ Vdd = +4V
Output IP3 vs.
Temperature @ Vdd = +3V
30
+25C
THIRD ORDER INTERCEPT (dBm)
30
-55C
25
20
+85C
15
10
-55C
25
20
+25C
15
+85C
10
20
22
24
26
28
30
32
FREQUENCY (GHz)
1-4
+25C
16
7
THIRD ORDER INTERCEPT (dBm)
AMPLIFIERS - CHIP
13
34
36
38
40
20
22
24
26
28
30
32
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
HMC261
v01.0500
MICROWAVE CORPORATION
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
Absolute Maximum Ratings
+5.5 Vdc
Input Power (RFin) (Vdd= +3V)
+16 dBm
Channel Temperature (Tc)
175 °C
Thermal Resistance ( jc)
(Channel Backside)
90 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
1
AMPLIFIERS - CHIP
Supply Voltage (Vdd)
Outline Drawing (See Die Handling, Mounting, Bonding Note)
Vdd
Backside is
Ground
RF IN
RF OUT
ALL DIMENSIONS IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
BOND PAD SPACING, CTR-CTR: 0.150 (0.006)
BACKSIDE METALLIZATION: GOLD
BOND PAD METALLIZATION: GOLD
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1-5
MICROWAVE CORPORATION
HMC261
v01.0500
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
AMPLIFIERS - CHIP
1
MMIC Assembly Techniques for HMC261
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling,
Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick
alumina thin film substrates are recommended for bringing RF to
and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin
film substrates must be used, the die should be raised 0.150mm
(6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the
0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum
heat spreader (moly-tab) which is then attached to the ground
plane (Figure 2).
Figure 3: Typical HMC261 Assembly
Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire
length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended.
1-6
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
MICROWAVE CORPORATION
v01.0500
HMC261
GaAs MMIC MEDIUM POWER
DISTRIBUTED AMPLIFIER, 20 - 40 GHz
Handling Precautions
Follow these precautions to avoid permanent damage.
1
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal
and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent
tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet,
tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool
temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should
be 290 deg. C.
AMPLIFIERS - CHIP
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports)
0.076 mm x 0.013 mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at [email protected]
1-7
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