SPICE MODELS: MMBT2907AT MMBT2907AT Lead-free PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction A Complementary NPN Type Available (MMBT2222AT) C Ultra-Small Surface Mount Package SOT-523 TOP VIEW Lead Free/RoHS Compliant (Note 2) E B G Mechanical Data · · · · · · · · · B C H Case: SOT-523 K Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 J Moisture Sensitivity: Level 1 per J-STD-020C M N L D Terminals: Solderable per MIL-STD-202, Method 208 C Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking (See Page 2): 2F B Ordering & Date Code Information, See Page 4 E Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D ¾ ¾ 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0° 8° ¾ All Dimensions in mm Weight: 0.002 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -600 mA Power Dissipation (Note 1) Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30269 Rev. 7 - 2 1 of 4 www.diodes.com MMBT2907AT ã Diodes Incorporated Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -60 ¾ V IC = -10mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO -60 ¾ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ¾ V IE = -10mA, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 125°C OFF CHARACTERISTICS (Note 3) Collector Cutoff Current ICBO ¾ -10 nA mA Collector Cutoff Current ICEX ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V IBL ¾ -50 nA VCE = -30V, VEB(OFF) = -0.5V hFE 75 100 100 100 50 ¾ ¾ ¾ 300 ¾ ¾ IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = Collector-Emitter Saturation Voltage VCE(SAT) ¾ -0.4 -1.6 V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(SAT) ¾ -1.3 -2.6 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo ¾ 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo — 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 fT 200 ¾ MHz Turn-On Time toff ¾ 45 ns Delay Time td ¾ 10 ns Rise Time tr ¾ 40 ns Turn-Off Time toff ¾ 100 ns Storage Time ts ¾ 80 ns Fall Time tf ¾ 30 ns Base Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain -10V -10V -10V -10V -10V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE = -20V, IC = -50mA, f = 100MHz SWITCHING CHARACTERISTICS Note: 3. VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA Short duration test pulse used to minimize self-heating effect. DS30269 Rev. 7 - 2 2 of 4 www.diodes.com MMBT2907AT 35 200 f = 1MHz 30 150 CT, CAPACITANCE (pF) Pd, POWER DISSIPATION (mW) Note 1 100 50 25 20 Cibo 15 10 Cobo 5 0 0 0 40 80 120 160 200 0 -1.4 IC = -300mA IC = -10mA VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR-EMITTER VOLTAGE (V) 6 8 10 12 14 16 18 20 -0.6 -1.6 IC = -100mA IC = -1mA IC = -30mA -1.0 -0.8 -0.6 -0.4 -0.2 0 -0.001 IC = 10 IB -0.5 -0.4 -0.3 TA = 150°C TA = 25°C -0.2 -0.1 TA = -50°C 0 -0.01 -0.1 -1 -1 -100 -10 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Fig. 4, Collector-Emitter Saturation Voltage vs. Collector Current IB, BASE CURRENT (mA) Fig. 3, Typical Collector Saturation Region 1000 -1.0 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = -5V hFE, DC CURRENT GAIN 4 VR, REVERSE VOLTAGE (V) Fig. 2, Typical Capacitance Characteristics TA, AMBIENT TEMPERATURE (ºC) Fig. 1, Power Derating Curve, Total Package -1.2 2 TA = 150°C 100 TA = 25°C TA = -50°C 10 VCE = -5V -0.9 TA = -50°C -0.8 -0.7 -0.6 TA = 25°C -0.5 -0.4 TA = 150°C -0.3 -0.2 1 -10 -1 -100 -1000 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base-Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs Collector Current DS30269 Rev. 7 - 2 -0.1 3 of 4 www.diodes.com MMBT2907AT fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = -5V 100 10 1 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs. Collector Current Ordering Information Notes: (Note 4) Device Packaging Shipping MMBT2907AT-7-F SOT-523 3000/Tape & Reel 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information 2F = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2FYM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code J K L M N P R S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30269 Rev. 7 - 2 4 of 4 www.diodes.com MMBT2907AT