DIODES ZXMP3A17DN8TC

ZXMP3A17DN8
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.070 ; ID= -4.4A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
SO8
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor Drive
• LCD backlighting
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP3A17DN8TA
7’‘
12mm
500 units
ZXMP3A17DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
ZXMP
3A17D
Top view
ISSUE 1 - OCTOBER 2005
1
ZXMP3A17DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-30
V
Gate-Source Voltage
V GS
⫾20
V
Continuous Drain [email protected] GS =10V; T A =25⬚C (b)(d)
@V GS =10V; T A =70⬚C (b)(d)
@V GS =10V; T A =25⬚C (a)(d)
ID
-4.4
-3.6
-3.4
A
A
A
Pulsed Drain Current (c)
I DM
-16.2
A
Continuous Source Current (Body Diode)(b)
IS
-2.5
A
Pulsed Source Current (Body Diode)(c)
I SM
-16.2
A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
PD
1.8
14
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
PD
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)(d)
R θJA
100
°C/W
Junction to Ambient (b)(e)
R θJA
70
°C/W
Junction to Ambient (b)(d)
R θJA
60
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
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ZXMP3A17DN8
RDS(on)
10 Limited
1
DC
1s
100m
10m
Max Power Dissipation (W)
-ID Drain Current (A)
CHARACTERISTICS
100ms
10ms
Single Pulse
Tamb=25°C
One active die
100m
1ms
100µs
1
10
-VDS Drain-Source Voltage (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Two active die
One active die
20
60
80 100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
110
Tamb=25°C
100
90 One active die
80
70
60 D=0.5
50
40
Single Pulse
30 D=0.2
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10 100 1k
MaximumPower (W)
Thermal Resistance (°C/W)
40
Single Pulse
Tamb=25°C
One active die
100
10
1
100µ 1m
10m 100m
1
10
100
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 1 - OCTOBER 2005
3
1k
ZXMP3A17DN8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
-30
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
I D =-250µA, V GS =0V
␮A
V DS =-30V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
⍀
⍀
I =-250␮A, V DS = V GS
D
V GS =-10V, I D =-3.2A
V GS =-4.5V, I D =-2.5A
V DS =-15V,I D =-3.2A
-1.0
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
V
-1.0
0.070
0.110
g fs
6.4
S
Input Capacitance
C iss
630
pF
Output Capacitance
C oss
113
pF
Reverse Transfer Capacitance
C rss
78
pF
DYNAMIC (3)
V DS =-15 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
1.74
ns
Rise Time
tr
2.87
ns
Turn-Off Delay Time
t d(off)
29.2
ns
Fall Time
tf
8.72
ns
Gate Charge
Qg
8.28
nC
Total Gate Charge
Qg
15.8
nC
Gate-Source Charge
Q gs
1.84
nC
Gate-Drain Charge
Q gd
2.80
nC
Diode Forward Voltage (1)
V SD
-0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD =-15V, I D =-1A
R G =6.0Ω, V GS =-10V
V DS =-15V,V GS =-5V,
I D =-3.2A
V DS =-15V,V GS =-10V,
I D =-3.2A
SOURCE-DRAIN DIODE
-1.2
V
T J =25°C, I S =-2.5A,
V GS =0V
19.5
ns
16.3
nC
T J =25°C, I F =-1.7A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXMP3A17DN8
TYPICAL CHARACTERISTICS
10V
4V
-ID Drain Current (A)
3.5V
3V
2.5V
1
-VGS
2V
0.1
0.01
0.1
10V
T = 150°C
5V
-ID Drain Current (A)
T = 25°C
10
1
4V
3.5V
3V
2.5V
1
2V
-VGS
0.1
1.5V
0.01
10
5V
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.4
1
T = 25°C
-VDS = 10V
0.1
1
RDS(on) Drain-Source On-Resistance (Ω)
Normalised RDS(on) and VGS(th)
T = 150°C
2
3
VGS = -10V
ID = -3.2A
1.2
RDS(on)
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0.6
-50
4
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
2V
T = 25°C
-ISD Reverse Drain Current (A)
-ID Drain Current (A)
10
-VGS
10
2.5V
3V
3.5V
1
4V
5V
10V
0.1
0.1
1
10
T = 150°C
1
T = 25°C
0.1
0.01
0.2
10
-ID Drain Current (A)
On-Resistance v Drain Current
0.4
0.6
0.8
1.0
-VSD Source-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
ISSUE 1 - OCTOBER 2005
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ZXMP3A17DN8
TYPICAL CHARACTERISTICS
10
VGS = 0V
f = 1MHz
800
600
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
1000
CISS
COSS
400
CRSS
200
0
0.1
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ID = -3.2A
8
6
4
2
VDS = -15V
0
0
5
10
15
20
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
ISSUE 1 - OCTOBER 2005
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ZXMP3A17DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
⍜
L
H
E
Pin 1
c
A
A1
e
MIN
MAX
MIN
MAX
A
0.053
0.069
1.35
1.75
A1
0.004
0.010
0.10
0.25
D
0.189
0.197
4.80
5.00
H
0.228
0.244
5.80
6.20
E
0.150
0.157
3.80
4.00
L
0.016
0.050
0.40
1.27
e
Seating Plane
b
MILLIMETRES
DIM
D
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
0.050 BSC
1.27 BSC
b
0.013
0.020
0.33
0.51
c
0.008
0.010
0.19
0.25
⍜
0⬚
8⬚
0⬚
8⬚
h
0.010
0.020
0.25
0.50
© Zetex Semiconductors plc 2005
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United Kingdom
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Fax: (49) 89 45 49 49 49
[email protected]
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Fax: (1) 631 360 8222
[email protected]
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Fax: (852) 24250 494
[email protected]
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
[email protected]
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - OCTOBER 2005
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