SPICE MODEL: 2N7002V/VA 2N7002V/VA NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · · · · Dual N-Channel MOSFET Low On-Resistance SOT-563 Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed Low Input/Output Leakage B C Ultra-Small Surface Mount Package D G SEE NOTE 1 Mechanical Data M K Case: SOT-563 · · · Moisture Sensitivity: Level 1 per J-STD-020C · · · Marking: See Page 2 Min Max Typ A 0.15 0.30 0.25 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D Lead Free By Design/RoHS Compliant (Note 3) · · Dim Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 H 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.56 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L D2 G1 S1 D2 S1 G1 S2 G2 D1 G2 S2 D1 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Ordering & Date Code Information: See Page 2 Maximum Ratings 2N7002VA (KAY Marking Code) 2N7002V (KAS Marking Code) Weight: 0.006 grams (approximate) @ TA = 25°C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS £ 1.0MW VDGR 60 V Gate-Source Voltage (Note 3) Continuous Pulsed VGSS ±20 ±40 V Drain Current (Note 3) Continuous ID 280 mA Drain Current (Note 3) Pulsed IDM 1.5 A Pd 150 mW RqJA 833 °C/W Tj, TSTG -55 to +150 °C Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. No purposefully added Lead. DS30448 Rev. 3 - 2 1 of 3 www.diodes.com 2N7002V/VA ã Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition BVDSS 60 70 ¾ V VGS = 0V, ID = 10mA IDSS ¾ ¾ 1.0 500 µA VDS = 60V, VGS = 0V IGSS ¾ ¾ ±100 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 ¾ 2.5 V VDS = VGS, ID = 250mA RDS (ON) ¾ ¾ ¾ ¾ 7.5 13.5 W VGS = 5V, ID = 0.05A, VGS = 10V, ID = 0.5A, Tj = 125°C ID(ON) 0.5 1.0 ¾ A VGS = 10V, VDS = 7.5V gFS 80 ¾ ¾ mS Input Capacitance Ciss ¾ ¾ 50 pF Output Capacitance Coss ¾ ¾ 25 pF Reverse Transfer Capacitance Crss ¾ ¾ 5.0 pF Turn-On Delay Time tD(ON) ¾ ¾ 20 ns Turn-Off Delay Time tD(OFF) ¾ ¾ 20 ns OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = 25°C @ TC = 125°C Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Satic Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Ordering Information (Note 5) Notes: Device Packaging Shipping 2N7002V-7 SOT-563 3000/Tape & Reel 2N7002VA-7 SOT-563 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information D2 G1 S1 KAS YM S2 G2 D1 KAS = 2N7002V Product Type Marking Code (See Note 1) YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September S1 D2 G1 KAY YM G2 S2 D1 KAY = 2N7002VA Product Type Marking Code (See Note 1) YM = Date Code Marking Y = Year ex: R = 2004 M = Month ex: 9 = September Date Code Key Year 2004 2005 2006 2007 2008 2009 Code R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30448 Rev. 3 - 2 2 of 3 www.diodes.com 2N7002V/VA Pd, POWER DISSIPATION (mW) NEW PRODUCT 250 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Derating Curve - Total DS30448 Rev. 3 - 2 3 of 3 www.diodes.com 2N7002V/VA