DIODES ZXMC4559DN8

ZXMC4559DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.9A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor Drive
• LCD backlighting
Q1 = N-CHANNEL
Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMC4559DN8TA
7’‘
12mm
500 units
ZXMC4559DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
• ZXMC
4559
Top view
ISSUE 5 - MAY 2005
1
SEMICONDUCTORS
ZXMC4559DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL N-Channel
P-Channel
UNIT
Drain-Source Voltage
V DSS
60
-60
V
Gate-Source Voltage
Continuous Drain Current @V GS =10V; T A =25⬚C (b) (d)
V GS
⫾20
⫾20
V
ID
4.7
-3.9
A
@V GS =10V; T A =25⬚C (b) (d)
3.7
-2.8
A
@V GS =10V; T A =25⬚C (a) (d)
3.6
-2.6
A
Pulsed Drain Current (c)
I DM
22.2
-18.3
A
Continuous Source Current (Body Diode) (b)
IS
3.4
-3.2
A
Pulsed Source Current (Body Diode)(c)
I SM
22.2
Power Dissipation at TA=25°C (a) (d)
Linear Derating Factor
PD
1.25
W
10
mW/°C
Power Dissipation at TA=25°C (a) (e)
Linear Derating Factor
PD
1.8
W
14
mW/°C
Power Dissipation at TA=25°C (b) (d)
Linear Derating Factor
PD
2.1
W
17
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
-18.3
A
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a) (d)
R ⍜JA
VALUE
100
UNIT
°C/W
Junction to Ambient (b) (e)
R ⍜JA
69
°C/W
Junction to Ambient (b) (d)
R ⍜JA
58
°C/W
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum junction temperature.
(d) For a device with one active die.
(e) For device with 2 active die running at equal power.
ISSUE 5 - MAY 2005
SEMICONDUCTORS
2
ZXMC4559DN8
CHARACTERISTICS
ISSUE 5 - MAY 2005
3
SEMICONDUCTORS
ZXMC4559DN8
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
V (BR)DSS
60
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
I D =250␮A, V GS =0V
V DS =60V, V GS =0V
Zero Gate Voltage Drain Current
I DSS
1.0
␮A
Gate-Body Leakage
I GSS
100
nA
V GS =⫾20V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
V
Static Drain-Source On-State
R DS(on)
I =250␮A, V DS = V GS
D
V GS =10V, I D =4.5A
1.0
Resistance (1)
(1) (3)
0.055
⍀
0.075
⍀
g fs
10.2
S
Input Capacitance
C iss
1063
pF
Output Capacitance
C oss
104
pF
C rss
64
pF
ns
Forward Transconductance
DYNAMIC (3)
Reverse Transfer Capacitance
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
3.5
Rise Time
tr
4.1
ns
Turn-Off Delay Time
t d(off)
26.2
ns
Fall Time
tf
10.6
ns
Gate Charge
Qg
11.0
nC
V GS =4.5V, I D =4.0A
V DS =15V,I D =4.5A
V DS =30V, V GS =0V,
f=1MHz
V DD =30V, I D =1A
R G ≅6.0⍀, V GS =10V
V DS =30V,V GS =5V,
I D =4.5A
Total Gate Charge
Qg
20.4
nC
Gate-Source Charge
Q gs
4.1
nC
V DS =30V,V GS =10V,
Q gd
5.1
nC
I D =4.5A
V SD
0.85
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
1.2
V
T J =25°C, I S =5.5A,
V GS =0V
Reverse Recovery Time (3)
t rr
22
ns
T J =25°C, I F =2.2A,
Reverse Recovery Charge (3)
Q rr
21.4
nC
di/dt= 100A/␮s
NOTES
(1) Measured under pulsed conditions. Width ⱕ300␮s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 5 - MAY 2005
SEMICONDUCTORS
4
ZXMC4559DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
V (BR)DSS
-60
TYP.
MAX.
UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V
I D =-250␮A, V GS =0V
V DS =-60V, V GS =0V
Zero Gate Voltage Drain Current
I DSS
-1.0
␮A
Gate-Body Leakage
I GSS
100
nA
V GS =⫾20V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
V
Static Drain-Source On-State
R DS(on)
I =-250␮A, V DS = V GS
D
V GS =-10V, I D =-2.9A
-1.0
0.085
Resistance (1)
Forward Transconductance
DYNAMIC (3)
0.125
(1) (3)
⍀
⍀
g fs
7.2
S
Input Capacitance
C iss
1021
pF
Output Capacitance
C oss
83.1
pF
Reverse Transfer Capacitance
C rss
56.4
pF
ns
V GS =-4.5V, I D =-2.4A
V DS =-15V,I D =-2.9A
V DS =-30 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
3.5
Rise Time
tr
4.1
ns
V DD =-30V, I D =-1A
Turn-Off Delay Time
t d(off)
35
ns
R G 6.0⍀, V GS =-10V
Fall Time
tf
Gate Charge
Qg
10
ns
12.1
nC
V DS =-30V,V GS =-5V,
I D =-2.9A
Total Gate Charge
Qg
24.2
nC
Gate-Source Charge
Q gs
2.5
nC
Gate-Drain Charge
Q gd
3.7
nC
V SD
-0.85
V DS =-30V,V GS =-10V,
I D =-2.9A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
-0.95
V
T J =25°C, I S =-3.4A,
V GS =0V
Reverse Recovery Time (3)
t rr
29.2
ns
Reverse Recovery Charge (3)
Q rr
39.6
nC
T J =25°C, I F =-2A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width ⱕ300␮s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 5 - MAY 2005
5
SEMICONDUCTORS
ZXMC4559DN8
N-CHANNEL TYPICAL CHARACTERISTICS
10V
T = 150°C
4.5V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
10
4V
3.5V
1
3V
0.1
VGS
2.5V
0.01
0.1
1
4.5V
10V
10
4V
3.5V
1
3V
2.5V
0.1
VGS
2V
0.01
10
0.1
VDS Drain-Source Voltage (V)
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.4
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
10
T = 150°C
1
T = 25°C
0.1
VDS = 10V
0.01
2
3
4
RDS(on)
1.0
0.8
50
100
150
Normalised Curves v Temperature
T = 25°C
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
0
Tj Junction Temperature (°C)
100
2.5V
VGS
100
3V
3.5V
10
4V
4.5V
1
10V
0.1
0.01
VGS = VDS
ID = 250uA
0.4
-50
5
Typical Transfer Characteristics
0.01
VGS(th)
0.6
VGS Gate-Source Voltage (V)
1000
VGS = 10V
ID = 4.5A
1.2
0.1
1
T = 150°C
10
0.1
0.01
0.2
10
ID Drain Current (A)
T = 25°C
1
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
1.2
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
ISSUE 5 - MAY 2005
SEMICONDUCTORS
6
ZXMC4559DN8
N-CHANNEL TYPICAL CHARACTERISTICS
10
1600
C Capacitance (pF)
VGS Gate-Source Voltage (V)
VGS = 0V
f = 1MHz
1400
1200
1000
CISS
800
COSS
600
CRSS
400
200
0
0.1
1
10
VDS - Drain - Source Voltage (V)
ID = 4.5A
8
6
4
2
VDS = 30V
0
0
5
10
15
20
25
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
ISSUE 5 - MAY 2005
7
SEMICONDUCTORS
ZXMC4559DN8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 5 - MAY 2005
SEMICONDUCTORS
8
ZXMC4559DN8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 5 - MAY 2005
9
SEMICONDUCTORS
ZXMC4559DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
⍜
L
H
E
Pin 1
c
A
A1
e
MIN
MAX
MIN
MAX
A
0.053
0.069
1.35
1.75
A1
0.004
0.010
0.10
0.25
D
0.189
0.197
4.80
5.00
H
0.228
0.244
5.80
6.20
E
0.150
0.157
3.80
4.00
L
0.016
0.050
0.40
1.27
e
Seating Plane
b
MILLIMETRES
DIM
D
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
0.050 BSC
1.27 BSC
b
0.013
0.020
0.33
0.51
c
0.008
0.010
0.19
0.25
⍜
0⬚
8⬚
0⬚
8⬚
h
0.010
0.020
0.25
0.50
© Zetex Semiconductors plc 2005
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 5 - MAY 2005
SEMICONDUCTORS
10