Infineon BB837 Silicon tuning diode Datasheet

BB837 /BB857...
Silicon Tuning Diode
For SAT -indoor-units
High capacitance ratio
Low series resistance
Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB837
BB857
1
2
Type
BB837
BB857
Package
SOD323
SCD80
Configuration
single
single
LS (nH) Marking
1.8
M
0.6
OO
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
30
Peak reverse voltage
VRM
35
Forward current
IF
20
mA
Operating temperature range
Top
-55 ... 150
°C
Storage temperature
Tstg
-55 ... 150
Value
Unit
V
R 5k
1
Nov-07-2002
BB837 /BB857...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Reverse current
IR
nA
VR = 30 V
-
-
10
VR = 30 V, TA = 85 °C
-
-
200
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
6
6.6
7.2
VR = 25 V, f = 1 MHz
0.5
0.55
0.65
VR = 28 V, f = 1 MHz
0.45
0.52
-
CT1 /CT25
10.2
12
-
CT1 /CT28
9.7
12.7
-
CT/CT
-
-
5
%
rS
-
1.5
-
Capacitance ratio
-
VR = 1 V, VR = 25 V, f = 1 MHz
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance matching1)
VR = 1V ... 28V, f = 1 MHz
Series resistance
VR = 5 V, f = 470 MHz
1For
details please refer to Application Note 047
2
Nov-07-2002
BB837 /BB857...
Diode capacitance CT = (VR )
Normalized diode capacitance
C(TA) /C(25°C)= (TA ); f = 1MHz
f = 1MHz
10
1.035
-
pF
1V
1.025
CTA/C 25
8
CT
7
6
2V
1.02
25V
1.015
28V
1.01
5
1.005
4
1
0.995
3
0.99
2
0.985
1
0.98
0 0
10
10
1
V
10
0.975
-30
2
-10
10
30
50
70
VR
Reverse current IR =
VR = 28V
TA = Parameter
(VR)
10 3
3
pA
80°C
pA
60°C
10 2
2
IR
28°C
IR
10
100
TA
Reverse current I R = (TA)
10
°C
10 1
10
1
10 0
10
0
-30
-10
10
30
50
70
°C
10 -1 0
10
100
TA
10
1
V
10
2
VR
3
Nov-07-2002
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