DMP3130L P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: • RDS(ON) < 77mΩ @ VGS = -10V • RDS(ON) < 95mΩ @ VGS = -4.5V • RDS(ON) < 150mΩ @ VGS = -2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) SOT-23 Drain D Gate Source Equivalent Circuit TOP VIEW Maximum Ratings S G TOP VIEW @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Body-Diode Continuous Current (Note 1) Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed ID IDM IS Value -30 ±12 -3.5 -2.8 -12 -2.0 Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1) Operating and Storage Temperature Range Notes: Symbol Value Unit PD RθJA 1.4 90 W °C/W TJ, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB. t ≤5 sec. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DMP3130L Document number: DS31524 Rev. 4 - 2 1 of 5 www.diodes.com November 2009 © Diodes Incorporated DMP3130L Electrical Characteristics @TA = 25°C unless otherwise specified Static Drain-Source On-Resistance Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1 ±100 V μA nA VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) -0.6 ⎯ -1.3 V RDS (ON) ⎯ ⎯ 59 73 115 77 95 150 mΩ VDS = VGS, ID = -250μA VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -4A VGS = -2.5V, ID = -3A VDS = -5V, ID = -4A VGS = 0V, IS = -3.0A Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 5) Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs VSD ⎯ ⎯ 8 0.8 ⎯ -1.25 S V Ciss Coss Crss ⎯ ⎯ ⎯ 432 87 62 864 174 124 pF pF pF VDS = -15V, VGS = 0V f = 1.0MHz Gate Resistance RG ⎯ 4.04 ⎯ Ω VDS = 0V, VGS = 0V f = 1.0MHz QG ⎯ QGS QGD td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 5.9 12 1.0 3.1 4.6 6.5 27.8 15.0 11.8 24 2.0 6.2 9.2 13.0 55.6 30.0 SWITCHING CHARACTERISTICS (Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Notes: nC VDS = -15V, VGS = -4.5V, ID = -4.0A VDS = -15V, VGS = -10V, ID = -4.0A VDS = -15V, VGS = -4.5V, ID = -4.0A ns VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω 4. Short duration pulse test used to minimize self-heating effect. 5. Guaranteed by design. Not subject to product testing 10 8 VGS = -10V VGS = -4.5V VGS = -3.0V 8 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS = -2.5V 6 4 VGS = -2.0V 6 VDS = -5V 4 2 2 TA = -55°C TA = 85°C T A = 25°C TA = 150°C VGS = -1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics DMP3130L Document number: DS31524 Rev. 4 - 2 5 0 0.5 1 1.5 2 2.5 -VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 2 of 5 www.diodes.com November 2009 © Diodes Incorporated 0.12 VGS = -2.5V 0.10 0.08 VGS = -4.5V 0.06 VGS = -10V 0.04 0.02 0 2 4 6 8 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.12 TA = 150°C 0.10 TA = 125°C TA = 85°C 0.08 TA = 25°C 0.06 T A = -55°C 0.04 0.02 0 10 0 2 4 6 8 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 10 1,000 1.6 1.4 VGS = -4.5V ID = -4.5A 1.2 Ciss C, CAPACITANCE (pF) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.14 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.14 VGS = -2.5V ID = -2A 1.0 100 Coss Crss 0.8 f = 1MHz VGS = 0V 0.6 -50 10 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature 1.5 1.2 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 30 10 ID = -250µA -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMP3130L 0.9 0.6 1 TA = 25°C 0.1 0.3 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMP3130L Document number: DS31524 Rev. 4 - 2 0.01 0.5 3 of 5 www.diodes.com 0.6 0.7 0.8 0.9 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1 November 2009 © Diodes Incorporated DMP3130L NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 160°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 9 Transient Thermal Response Ordering Information (Note 6) Part Number DMP3130L-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. YM Marking Information P5S Date Code Key Year Code 2008 V Month Code 2009 W Jan 1 Feb 2 P5S = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2010 X Mar 3 2011 Y Apr 4 May 5 Jun 6 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D Package Outline Dimensions A B C H K M K1 D J F G DMP3130L Document number: DS31524 Rev. 4 - 2 L 4 of 5 www.diodes.com SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm November 2009 © Diodes Incorporated DMP3130L Suggested Pad Layout Y NEW PRODUCT Z C X Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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