Infineon IPP65R190E6 650v coolmosâ ¢ e6 power transistor Datasheet

MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS E6
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Data Sheet
Rev. 2.0, 2011-05-13
Final
Industrial & Multimarket
650V CoolMOS™ E6 Power Transistor
1
IPA65R190E6, IPB65R190E6
IPI65R190E6, IPP65R190E6
IPW65R190E6
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS™ E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
•
•
•
•
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC1) qualified, Pb-free plating, Halogen free
drain
pin 2
gate
pin 1
Applications
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
source
pin 3
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
700
V
RDS(on),max
0.19

Qg,typ
73
nC
ID,pulse
66
A
Eoss @ 400V
5.9
µJ
Body diode di/dt
500
A/µs
Type / Ordering Code
Package
Marking
Related Links
IPW65R190E6
PG-TO247
IFX CoolMOS Webpage
IPB65R190E6
PG-TO263
IFX Design tools
IPI65R190E6
PG-TO262
IPP65R190E6
PG-TO220
IPA65R190E6
PG-TO220 FullPAK
65E6190
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Table of Contents
Table of Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Final Data Sheet
3
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Maximum ratings
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Continuous drain current
1)
ID
Values
Min.
Typ.
Max.
-
-
20.2
Unit
Note / Test Condition
A
TC= 25 °C
12.8
2)
TC= 100°C
Pulsed drain current
ID,pulse
-
-
66
A
TC=25 °C
Avalanche energy, single pulse
EAS
-
-
485
mJ
ID=3.5 A,VDD=50 V
Avalanche energy, repetitive
EAR
-
-
0.73
Avalanche current, repetitive
IAR
-
-
3.5
A
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480 V
Gate source voltage
VGS
-20
-
20
V
static
-30
ID=3.5 A,VDD=50 V
30
AC (f>1 Hz)
Power dissipation for
TO-220, TO-247, TO-262, TO-263
Ptot
-
-
151
Power dissipation for
TO-220 FullPAK
Ptot
-
-
34
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
-
60
Ncm
Mounting torque
TO-220, TO-247
Mounting torque
TO-220 FullPAK
W
50
Continuous diode forward current
2)
Diode pulse current
Reverse diode dv/dt
3)
TC=25 °C
M3 and M3.5 screws
M2.5 screws
IS
-
-
17.5
A
TC=25 °C
IS,pulse
-
-
66
A
TC=25 °C
dv/dt
-
-
15
V/ns
VDS=0...400 V,ISD  ID,
Tj=25 °C
500
A/µs
Maximum diode commutation
dif/dt
speed3)
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
Final Data Sheet
4
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Thermal characteristics
3
Thermal characteristics
Table 3
Thermal characteristics non FullPAK
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
0.83
Thermal resistance, junction ambient
RthJA
-
-
62
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Table 4
°C/W
leaded
°C
1.6 mm (0.063 in.)
from case for 10 s
Unit
Note /
Test Condition
Thermal characteristics FullPAK
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
3.7
Thermal resistance, junction ambient
RthJA
-
-
80
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Table 5
Note /
Test Condition
°C/W
leaded
°C
1.6 mm (0.063 in.)
from case for 10 s
Unit
Note /
Test Condition
Thermal characteristics SMD
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
0.83
RthJA
-
-
62
SMD version, device
on PCB, minimal
footprint
-
35
-
SMD version, device
on PCB, 6cm2 cooling
area1)
-
-
260
Thermal resistance, junction ambient
Soldering temperature,
wave- & reflow soldering allowed
Tsold
°C/W
°C
reflow MSL1
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
5
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 6
Static characteristics
Parameter
Symbol
Drain-source breakdown voltage V(BR)DSS
Values
Min.
Typ.
Max.
650
-
-
Unit
Note / Test Condition
V
VGS=0 V, ID=1.0 mA
Gate threshold voltage
VGS(th)
2.5
3
3.5
Zero gate voltage drain current
IDSS
-
-
1
-
10
-
-
-
100
nA
VGS=20 V, VDS=0 V
-
0.17
0.19

VGS=10 V, ID=7.3 A,
Tj=25 °C
-
0.44
-
-
6
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate resistance
Table 7
RG
VDS=VGS, ID=0.73 mA
VDS=650 V, VGS=0 V,
Tj=25 °C
µA
VDS=650 V, VGS=0 V,
Tj=150 °C
VGS=10 V, ID=7.3 A,
Tj=150 °C

f=1 MHz, open drain
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=100 V,
f=1 MHz
Input capacitance
Ciss
-
1620
-
Output capacitance
Coss
-
98
-
Effective output capacitance,
energy related1)
Co(er)
-
65
-
VGS=0 V,
VDS=0...480 V
Effective output capacitance, time
related2)
Co(tr)
-
308
-
ID=constant, VGS=0 V
VDS=0...480V
Turn-on delay time
td(on)
-
12
-
Rise time
tr
-
11
-
Turn-off delay time
td(off)
-
112
-
Fall time
tf
-
10
-
ns
VDD=400 V,
VGS=13 V, ID=11 A,
RG= 3.4 
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet
6
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics
Table 8
Gate charge characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Gate to source charge
Qgs
-
8.9
-
Gate to drain charge
Qgd
-
38
-
Gate charge total
Qg
-
73
-
Gate plateau voltage
Vplateau
-
5.5
-
Table 9
Unit
Note /
Test Condition
nC
VDD=480 V, ID=11 A,
VGS=0 to 10 V
V
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Diode forward voltage
VSD
-
0.9
-
V
VGS=0 V, IF=11 A,
Tj=25 °C
Reverse recovery time
trr
-
410
-
ns
Reverse recovery charge
Qrr
-
6.1
-
µC
VR=400 V, IF=11 A,
diF/dt=100 A/µs
Peak reverse recovery current
Irrm
-
28
-
A
Final Data Sheet
7
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 10
Power dissipation
Non FullPAK
Power dissipation
FullPAK
Ptot = f(TC)
Ptot = f(TC)
Table 11
Max. transient thermal impedance
Non FullPAK
Max. transient thermal impedance
FullPAK
Z(thJC)=f(tp); parameter: D=tp/T
Final Data Sheet
Z(thJC)=f(tp); parameter: D=tp/T
8
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Table 12
Safe operating area TC=25 °C
Non FullPAK
Safe operating area TC=25 °C
FullPAK
ID=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter tp
ID=f(VDS); TC=25 °C; VGS > 7V; D=0; parameter tp
Table 13
Safe operating area TC=80 °C
Non FullPAK
Safe operating area TC=80 °C
FullPAK
ID=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter tp
ID=f(VDS); TC=80 °C; VGS > 7V; D=0; parameter tp
Final Data Sheet
9
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Table 14
Typ. output characteristics Tj=25 °C
Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=7.3 A; VGS=10 V
Final Data Sheet
10
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Table 16
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
VGS=f(Qgate), ID=11 A pulsed
Table 17
Avalanche energy
Drain-source breakdown voltage
EAS=f(Tj); ID=3.5 A; VDD=50 V
VBR(DSS)=f(Tj); ID=1.0 mA
Final Data Sheet
11
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Electrical characteristics diagrams
Table 18
Typ. capacitances
Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz
EOSS=f(VDS)
Table 19
Forward characteristics of reverse diode
IF=f(VSD); parameter: Tj
Final Data Sheet
12
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Test circuits
6
Test circuits
Table 20
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
VDS
90%
VDS
VGS
10%
VGS
td(on)
td(off)
tr
ton
Table 21
tf
toff
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
VDS
ID
Table 22
Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
i
v
diF /d t
R G1
ΙF
VDS
RG2
Ι RRM
trr = tS + tF
Q rr = Q S + Q F
trr
tS
tF
QS
10% Ι RRM
QF
d irr /d t
90% Ι RRM
RG1 = RG2
Final Data Sheet
v
13
t
VRRM
SIL00088
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
7
Package outlines
Figure 1
Outlines TO-247, dimensions in mm/inches
Final Data Sheet
14
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
Figure 2
Outlines TO-220, dimensions in mm/inches
Final Data Sheet
15
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
Figure 3
Outlines TO-220 FullPAK, dimensions in mm/inches
Final Data Sheet
16
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
Figure 4
Outlines TO-262, dimensions in mm/inches
Final Data Sheet
17
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Package outlines
Figure 5
Outlines TO-263, dimensions in mm/inches
Final Data Sheet
18
Rev. 2.0, 2011-05-13
650V CoolMOS™ E6 Power Transistor
IPx65R190E6
Revision History
8
Revision History
Revision History: 2011-05-13, Rev. 2.0
Previous Revision:
Revision
Subjects (major changes since last revision)
2.0
Release of final data sheet
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Edition 2011-05-13
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Final Data Sheet
19
Rev. 2.0, 2011-05-13
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