DIODES ZXMC3A17DN8TC

ZXMC3A17DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel : V(BR)DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A
P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
Q1 = N-channel
Q2 = P-channel
• Motor drive
• LCD backlighting
PINOUT
ORDERING INFORMATION
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY PER REEL
ZXMC3A17DN8TA
7”
12mm
500 units
ZXMC3A17DN8TC
13”
12mm
2500 units
DEVICE MARKING
Top View
• ZXMC
3A17
ISSUE 1 - OCTOBER 2005
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SEMICONDUCTORS
ZXMC3A17DN8
ADVANCE INFORMATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
N-channel
P-channel
UNIT
Drain-Source Voltage
V DSS
30
-30
V
Gate-Source Voltage
V GS
±20
±20
V
ID
5.4
4.3
4.1
-4.4
-3.6
-3.4
A
I DM
23
-20
A
IS
2.6
-2.5
A
I SM
23
-20
A
Continuous Drain Current
(V GS = 10V; T A =25°C) (b)(d)
(V GS = 10V; T A =70°C) (b)(d)
(V GS = 10V; T A =25°C) (a)(d)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C
(b)
(a) (d)
PD
Linear Derating Factor
Power Dissipation at T A =25°C (a) (e)
Linear Derating Factor
PD
Power Dissipation at T A =25°C (b) (d)
Linear Derating Factor
PD
T j , T stg
Operating and Storage Temperature Range
1.25
W
10
mW/°C
1.8
W
14
mW/°C
2.1
W
17
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
(a) (d)
R ⍜JA
100
°C/W
Junction to Ambient (a) (e)
R ⍜JA
70
°C/W
(b) (d)
R ⍜JA
60
°C/W
Junction to Ambient
Junction to Ambient
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300␮s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with two active die running at equal power.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2
ZXMC3A17DN8
ADVANCE INFORMATION
CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
3
SEMICONDUCTORS
ZXMC3A17DN8
ADVANCE INFORMATION
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown
Voltage
V (BR)DSS
30
Zero Gate Voltage Drain
Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold
Voltage
V GS(th)
Static Drain-Source On-State
R DS(on)
TYP.
MAX.
UNIT
CONDITIONS
V
I D = 250␮A, V GS =0V
0.5
␮A
V DS =30V, V GS =0V
100
nA
V GS =±20V, V DS =0V
V
I D = 250␮A, V DS =V GS
STATIC
1.0
Resistance (1)
Forward
0.050
⍀
V GS = 10V, I D = 7.8A
0.065
⍀
V GS = 4.5V, I D = 6.8A
V DS = 10V, I D = 7.8A
g fs
10
S
Input Capacitance
C iss
600
pF
Output Capacitance
C oss
104
pF
Reverse Transfer Capacitance
C rss
58.5
pF
Transconductance (1) (3)
DYNAMIC (3)
V DS = 25V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On-Delay Time
t d(on)
2.9
ns
Rise Time
tr
6.4
ns
Turn-Off Delay Time
t d(off)
16
ns
Fall Time
tf
11.2
ns
Gate Charge
Qg
6.9
nC
V DD = 15V, I D =3.5A
R G ≅ 6.0⍀,
V GS = 10V
V DS = 15V, V GS = 5V
I D = 3.5A
Total Gate Charge
Qg
12.2
nC
Gate-Source Charge
Q gs
1.7
nC
Gate-Drain Charge
Q gd
2.4
nC
V SD
0.85
V DS = 15V, V GS = 10V
I D = 3.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
0.95
V
T j =25°C, I S = 3.2A,
V GS =0V
(1)
(2)
(3)
Reverse Recovery Time (3)
t rr
18.8
ns
Reverse Recovery Charge (3)
Q rr
14.1
nC
T j =25°C, I F = 3.5A,
di/dt=100A/␮s
Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%.
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
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SEMICONDUCTORS
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ZXMC3A17DN8
ADVANCE INFORMATION
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
V (BR)DSS
-30
TYP.
MAX.
UNIT
CONDITIONS
V
I D = -250␮A, V GS =0V
STATIC
Drain-Source Breakdown
Voltage
I DSS
-1.0
␮A
V DS = -30V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-Source Threshold
V GS(th)
V
I D = -250␮A, V DS =V GS
Zero Gate Voltage Drain
Current
-1.0
Voltage
Static Drain-Source
R DS(on)
On-State Resistance (1)
0.070
⍀
V GS = -10V, I D = -3.2A
0.110
⍀
V GS = -4.5V, I D = -2.5A
V DS = -15V, I D = -3.2A
g fs
6.4
S
Input Capacitance
C iss
630
pF
Output Capacitance
C oss
113
pF
Reverse Transfer
Capacitance
C rss
78
pF
Forward
Transconductance (1) (3)
DYNAMIC (3)
V DS = -15V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On-Delay Time
t d(on)
1.7
ns
Rise Time
tr
2.9
ns
Turn-Off Delay Time
t d(off)
29.2
ns
Fall Time
tf
8.7
ns
Gate Charge
Qg
8.3
nC
V DD = -15V, I D = -1A
R G ≅ 6.0⍀,
V GS = -10V
V DS = -15V, V GS = -5V
I D = -3.2A
Total Gate Charge
Qg
15.8
nC
Gate-Source Charge
Q gs
1.8
nC
V DS = -15V, V GS =
-10V
Gate Drain Charge
Q gd
2.8
nC
I D = -3.2A
V SD
-0.85
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
-0.95
V
T j =25°C, I S = -2.5A,
V GS =0V
Reverse Recovery Time (3)
t rr
19.5
ns
Reverse Recovery Charge (3)
Q rr
16.3
nC
T j =25°C, I S = -1.7A,
di/dt=100A/␮s
NOTES:
(1)
(2)
(3)
Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%.
Switching characteristics are independent of operating junction temperature.
For design aid only, not subject to production testing.
ISSUE 1 - OCTOBER 2005
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SEMICONDUCTORS
ZXMC3A17DN8
ADVANCE INFORMATION
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
6
ZXMC3A17DN8
ADVANCE INFORMATION
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
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SEMICONDUCTORS
ZXMC3A17DN8
ADVANCE INFORMATION
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
8
ZXMC3A17DN8
ADVANCE INFORMATION
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 1 - OCTOBER 2005
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SEMICONDUCTORS
ZXMC3A17DN8
SO8 PACKAGE OUTLINE (Conforms to JEDEC MS-012AA Iss. C)
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
⍜
0°
8°
0°
8°
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
-
-
-
-
-
1.27 BSC
Min
Max
0.050 BSC
© Zetex Semiconductors plc 2005
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For the latest product information, log on to www.zetex.com
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
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