AP9936GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ DC-DC Application
D2
▼ Dual N-channel Device
D1
D2
D1
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
S2
SO-8
S1
BVDSS
30V
RDS(ON)
50mΩ
ID
G2
5A
G1
Description
D2
D1
AP9936 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G2
G1
S1
S2
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Rating
Units
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@TA=25℃
Drain Current, VGS @ 10V3
5
A
ID@TA=70℃
Drain Current, VGS @ 10V3
4
A
Symbol
VDS
1
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
0.016
W/℃
TSTG
Linear Derating Factor
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201501094
AP9936GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=5A
-
-
50
mΩ
VGS=4.5V, ID=3.9A
-
-
80
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=15V, ID=5A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=5A
-
6.1
-
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=5V
-
3.3
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
6.7
-
ns
tr
Rise Time
ID=1.5A
-
6.4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22.1
-
ns
tf
Fall Time
RD=10Ω
-
2.1
-
ns
Ciss
Input Capacitance
VGS=0V
-
240
-
pF
Coss
Output Capacitance
VDS=25V
-
145
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Min.
Typ.
VD=VG=0V , VS=1.2V
-
-
1.67
A
Tj=25℃, IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
Forward On Voltage
2
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9936GM-HF
40
50
10V
8.0V
8.0V
ID , Drain Current (A)
ID , Drain Current (A)
40
10V
T A =150 o C
T A =25 o C
5.0V
30
20
4.0V
30
6.0V
20
4.0V
10
V GS =3.0V
10
V GS =3.0V
0
0
0
2
4
0
6
2
V DS , Drain-to-Source Voltage (V)
4
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
120
I D =5A
V GS =10V
I D =5A
T A =25 ℃
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
100
80
60
1.4
1.2
1
40
0.8
0.6
20
2
4
6
8
10
-50
12
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.5
2
o
o
Tj=25 C
VGS(th) (V)
IS(A)
Tj=150 C
1
1.5
1
0.1
0.5
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9936GM-HF
f=1.0MHz
1000
10
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
12
8
Coss
100
6
Crss
4
2
10
0
0
2
4
6
8
10
1
12
8
Q G , Total Gate Charge (nC)
15
22
29
V DS , Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8 . Typical Capacitance Characteristics
1
100
ID (A)
10
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Single Pulse
0.01
Rthja=135oC/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
td(on)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
QG
5V
QGS
QGD
10%
VGS
tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP9936GM-HF
MARKING INFORMATION
Part Number
9936GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5