Lyontek LY6251216ML-70LLIT 512k x 16 bit low power cmos sram Datasheet

®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
REVISION HISTORY
Revision
Rev. 0.1
Rev. 0.2
Rev. 0.3
Rev. 0.4
Rev. 0.5
Rev. 0.6
Rev. 1.0
Description
Initial Issue
Added ISB Spec.
Revised FEATURES & ORDERING INFORMATION Lead
free and green package available to Green package available
Added packing type in ORDERING INFORMATION
Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS
Revised VDR
Revised ORDERING INFORMATION in page 11
Deleted E grade
Revised ISB1 in page 3
Revised Notes item 1 and 2 in page 4
Issue Date
Oct.14.2007
Feb.1.2008
May.20.2009
Sep.11.2009
Aug.30.2010
Apr.12.2011
Aug.29.2013
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
Rev. 1.1
Rev. 1.2
Revised ORDERING INFORMATION
Revised VIL(max) from 0.6V to 0.8V
Deleted WRITE CYCLE Notes :
1.WE#,CE#, LB#, UB# must be high during all address transitions.
In page 8
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
May 8.2014
Jun.29.2016
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
FEATURES
GENERAL DESCRIPTION
„ Fast access time : 55/70ns
„ Low power consumption:
Operating current : 45/30mA (TYP.)
Standby current : 8μA (TYP.) LL-version
„ Single 4.5V ~ 5.5V power supply
„ All inputs and outputs TTL compatible
„ Fully static operation
„ Tri-state output
„ Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
„ Data retention voltage : 1.5V (MIN.)
„ Green package available
„ Package : 44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
The LY6251216 is a 8,388,608-bit low power CMOS
static random access memory organized as 524,288
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of operating
temperature.
The LY6251216 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY6251216 operates from a single power
supply of 4.5V ~ 5.5V and all inputs and outputs are
fully TTL compatible
PRODUCT FAMILY
Product
Family
LY6251216
LY6251216(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
Speed
4.5 ~ 5.5V
4.5 ~ 5.5V
55/70ns
55/70ns
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
Vcc
Vss
A0-A18
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
WE#
OE#
LB#
UB#
Power Dissipation
Standby(ISB1,TYP.) Operating(Icc,TYP.)
8µA(LL)
45/30mA
8µA(LL)
45/30mA
SYMBOL
DESCRIPTION
A0 - A18
Address Inputs
DQ0 – DQ15 Data Inputs/Outputs
DECODER
I/O DATA
CIRCUIT
512Kx16
MEMORY ARRAY
CE#
Chip Enable Input
WE#
Write Enable Input
OE#
Output Enable Input
LB#
Lower Byte Control
UB#
Upper Byte Control
VCC
Power Supply
VSS
Ground
COLUMN I/O
CONTROL
CIRCUIT
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2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
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1
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
PIN CONFIGURATION
A
LB# OE#
A0
A1
B
DQ8 UB#
A3
A4
CE# DQ0
C
DQ9 DQ10 A5
A6
DQ1 DQ2
D
Vss DQ11 A17
A7
DQ3 Vcc
E
Vcc DQ12 NC
A16 DQ4 Vss
F
DQ14 DQ13 A14
A15 DQ5 DQ6
G
DQ15 NC
A12
A13 WE# DQ7
A10
H
A18
A8
A9
1
2
3
4
TFBGA
A2
NC
A11
NC
5
6
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
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®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on VCC relative to VSS
Voltage on any other pin relative to VSS
SYMBOL
VT1
VT2
Operating Temperature
TA
Storage Temperature
Power Dissipation
DC Output Current
TSTG
PD
IOUT
RATING
-0.5 to 6.5
-0.5 to VCC+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
OE#
H
X
L
L
L
L
L
L
L
L
X
X
H
H
L
L
L
X
X
X
WE# LB#
X
X
H
H
H
H
H
L
L
L
X
H
L
X
L
H
L
L
H
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
DOUT
High – Z
DOUT
High – Z
DOUT
DOUT
DIN
High – Z
DIN
High – Z
DIN
DIN
UB#
X
H
X
L
H
L
L
H
L
L
H = VIH, L = VIL, X = Don't care.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
SUPPLY CURRENT
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
VCC
*1
Input High Voltage
VIH
*2
Input Low Voltage
VIL
Input Leakage Current
ILI
VCC ≧ VIN ≧ VSS
Output Leakage
VCC ≧ VOUT ≧ VSS
ILO
Current
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL
IOL = 2mA
Cycle time = Min.
- 55
CE# = VIL,
ICC
II/O = 0mA
- 70
Average Operating
Other pins at VIL or VIH
Power supply Current
Cycle time = 1µs
ICC1 CE#≦0.2V, II/O = 0mA
Other pins at 0.2V or VCC-0.2V
CE# = VIH
ISB
Other pins at VIL or VIH
Standby Power
-LL
Supply Current
CE# ≧VCC-0.2V
ISB1
Other pins at 0.2V or VCC-0.2V -LLI
MIN.
4.5
2.4
- 0.2
-1
TYP.
5.0
-
*4
MAX.
5.5
VCC+0.3
0.8
1
UNIT
V
V
V
µA
-1
-
1
µA
2.4
-
-
0.4
V
V
-
45
60
mA
-
30
50
mA
-
6
12
mA
-
0.2
2
mA
-
8
30
µA
-
8
50
µA
Notes:
1. VIH(max) = VCC + 2.0V for pulse width less than 6ns.
2. VIL(min) = VSS - 2.0V for pulse width less than 6ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at VCC = VCC(TYP.) and TA = 25℃
CAPACITANCE (TA = 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
-
MAX
6
8
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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UNIT
pF
pF
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
PARAMETER
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
LB#, UB# Access Time
LB#, UB# to High-Z Output
LB#, UB# to Low-Z Output
(2) WRITE CYCLE
PARAMETER
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
LB#, UB# Valid to End of Write
SYM.
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
tBA
tBHZ*
tBLZ*
SYM.
tWC
tAW
tCW
tAS
tWP
tWR
tDW
tDH
tOW*
tWHZ*
tBW
LY6251216-55
MIN.
MAX.
55
55
55
30
10
5
20
20
10
55
25
10
-
LY6251216-70
MIN.
MAX.
70
70
70
35
10
5
25
25
10
70
30
10
-
UNIT
LY6251216-55
MIN.
MAX.
55
50
50
0
45
0
25
0
5
20
45
-
LY6251216-70
MIN.
MAX.
70
60
60
0
55
0
30
0
5
25
60
-
UNIT
*These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE# and OE# Controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
LB#,UB#
tBA
OE#
tOE
tOH
tOHZ
tBHZ
tCHZ
tOLZ
tBLZ
tCLZ
Dout
High-Z
Data Valid
High-Z
Notes :
1.WE#is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low, LB# or UB# = low.
3.Address must be valid prior to or coincident with CE# = low, LB# or UB# = low transition; otherwise tAA is the limiting parameter.
4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
6
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
WRITE CYCLE 1 (WE# Controlled) (1,2,4,5)
tWC
Address
tAW
CE#
tCW
tBW
LB#,UB#
tAS
tWP
tWR
WE#
tWHZ
Dout
TOW
High-Z
(4)
tDW
(4)
tDH
Data Valid
Din
WRITE CYCLE 2 (CE# Controlled) (1,4,5)
tWC
Address
tAW
CE#
tAS
tWR
tCW
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
tDH
Data Valid
Din
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
7
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
WRITE CYCLE 3 (LB#,UB# Controlled) (1,4,5)
tWC
Address
tAW
tWR
CE#
tAS
tCW
tBW
LB#,UB#
tWP
WE#
tWHZ
Dout
High-Z
(4)
tDW
tDH
Data Valid
Din
Notes :
1.A write occurs during the overlap of a low CE#, low WE#, LB# or UB# = low.
2.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed
on the bus.
3.During this period, I/O pins are in the output state, and input signals must not be applied.
4.If the CE#, LB#, UB# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
5.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
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®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
VCC for Data Retention
VDR
CE#≧VCC - 0.2V
VCC = 1.5V
-LL
CE# ≧VCC-0.2V
Data Retention Current
IDR
Other pins at 0.2V or VCC-0.2V -LLI
Chip Disable to Data
See Data Retention
tCDR
Retention Time
Waveforms (below)
Recovery Time
tR
tRC* = Read Cycle Time
MIN.
1.5
TYP.
-
MAX.
5.5
UNIT
V
-
5
30
µA
-
5
50
µA
0
-
-
ns
tRC*
-
-
ns
DATA RETENTION WAVEFORM
Low Vcc Data Retention Waveform (1) (CE# controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
CE#
VIH
tR
CE# ≧ Vcc-0.2V
VIH
Low Vcc Data Retention Waveform (2) (LB#, UB# controlled)
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tCDR
LB#,UB#
VIH
tR
LB#,UB# ≧ Vcc-0.2V
VIH
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
9
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
PACKAGE OUTLINE DIMENSION
44-pin 400mil TSOP-Ⅱ Package Outline Dimension
SYMBOLS
A
A1
A2
b
c
D
E
E1
e
L
ZD
y
Θ
DIMENSIONS IN MILLMETERS
MIN.
NOM.
MAX.
1.20
0.05
0.10
0.15
0.95
1.00
1.05
0.30
0.45
0.12
0.21
18.212
18.415
18.618
11.506
11.760
12.014
9.957
10.160
10.363
0.800
0.40
0.50
0.60
0.805
0.076
o
o
o
3
6
0
DIMENSIONS IN MILS
MIN.
NOM.
MAX.
47.2
2.0
3.9
5.9
37.4
39.4
41.3
11.8
17.7
4.7
8.3
717
725
733
453
463
473
392
400
408
31.5
15.7
19.7
23.6
31.7
3
o
o
o
0
3
6
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
10
®
LY6251216
Rev. 1.2
512K X 16 BIT LOW POWER CMOS SRAM
48-ball 6mm × 8mm TFBGA Package Outline Dimension
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
11
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
ORDERING INFORMATION
Package Type
Access Time
(Speed)(ns)
44-Pin 400mil
TSOP-II
55
Power
Type
Ultra
Low Power
Temperature
Range(℃)
0℃~70℃
-40℃~85℃
70
Ultra
Low Power
0℃~70℃
-40℃~85℃
Packing
Type
Tray
LY6251216ML-55LL
Tape Reel
LY6251216ML-55LLT
Tray
LY6251216ML-55LLI
Tape Reel
LY6251216ML-55LLIT
Tray
LY6251216ML-70LL
Tape Reel
LY6251216ML-70LLT
Tray
LY6251216ML-70LLI
Tape Reel
LY6251216ML-70LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
12
Lyontek Item No.
®
LY6251216
512K X 16 BIT LOW POWER CMOS SRAM
Rev. 1.2
ORDERING INFORMATION
Package Type
Access Time
(Speed)(ns)
48-ball 6mmx8mm
TFBGA
55
Power
Type
Ultra
Low Power
Temperature
Range(℃)
0℃~70℃
-40℃~85℃
70
Ultra
Low Power
0℃~70℃
-40℃~85℃
Packing
Type
Tray
LY6251216GL-55LL
Tape Reel
LY6251216GL-55LLT
Tray
LY6251216GL-55LLI
Tape Reel
LY6251216GL-55LLIT
Tray
LY6251216GL-70LL
Tape Reel
LY6251216GL-70LLT
Tray
LY6251216GL-70LLI
Tape Reel
LY6251216GL-70LLIT
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
13
Lyontek Item No.
®
LY6251216
Rev. 1.2
512K X 16 BIT LOW POWER CMOS SRAM
THIS PAGE IS LEFT BLANK INTENTIONALLY.
Lyontek Inc. reserves the rights to change the specifications and products without notice.
2F, No.17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
14
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