GOOD-ARK BAS86 Small-signal diode schottky diode Datasheet

BAS86
Small-Signal Diode
Schottky Diode
Features
For general purpose applications.
This diode features low turn-on voltage. This device are
protected by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
Metal-on-silicon Schottky barrier device which is protected by a
PN junction guard ring.
The low forward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
This diode is also available in the DO-35 case with type
designation BAT86.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05g
Cathode Band Color: Green
Maximum Ratings and Thermal Characteristics
(TA=25oC unless otherwise noted.)
Parameter
Symbol
Value
Unit
Continuous reverse voltage
VR
50
Volts
Forward continuous current at Tamb=25oC
IF
200
(1)
mA
Repetitive peak forward current
at tp<1s, υ<0.5, Tamb=25oC
IFRM
500
(1)
mA
Power dissipation at Tamb=25oC
Ptot
200
(1)
300
(1)
Thermal resistance junction to ambient air
Junction temperature
Ambient operating temperature range
Storage temperature range
Notes:
RθJA
mW
o
C/W
125
o
C
Tamb
-65 to +125
o
C
TS
-65 to +150
o
C
Tj
1. Valid provided that electrodes are kept at ambient temperature.
699
Electrical Characteristics
(TJ=25oC unless otherwise noted.)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
V(BR)R
IR=10uA (pulsed)
50
-
-
Volts
IR
VR=25V
-
0.2
0.5
uA
Forward voltage
VF
Pulse Test tp<300us, δ<2%
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
-
0.200
0.275
0.365
0.460
0.700
0.300
0.380
0.450
0.600
0.900
Capacitance
Ctot
VR=1V, f=1MHz
-
-
8
pF
trr
IF=10mA, IR=10mA,
IR=1mA
-
-
5
ns
Reverse breakdown voltage
Leakage current
Reverse recovery time
700
Volt
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