DIODES ZXM66P03N8TC

ZXM66P03N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
TAPE WIDTH
QUANTITY
PER REEL
ZXM66P03N8TA
7”
12mm
500 units
S
8
ZXM66P03N8TC
13”
12mm
2500 units
S
2 1
D
7
D
S
6
D
4
DEVICE
5
REEL SIZE
3
ORDERING INFORMATION
DEVICE MARKING
• ZXM
Top View
66P03
ISSUE 1 - JANUARY 2006
1
SEMICONDUCTORS
ZXM66P03N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-30
V
Gate- Source Voltage
V GS
±20
V
ID
-7.9
-6.3
-6.25
A
I DM
-28
A
IS
I SM
-4.1
A
-28
A
Power Dissipation at T A =25°C (a)
Linear Derating Factor
PD
1.56
12.5
W
mW/°C
Power Dissipation at T A =25°C (b)
Linear Derating Factor
PD
2.5
20
W
mW/°C
T j :T stg
-55 to +150
°C
Continuous Drain Current V GS =-10V; T A =25°C(b)
V GS =-10V; T A =70°C(b)
V GS =-10V; T A =25°C(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
R θJA
80
°C/W
Junction to Ambient (b)
R θJA
50
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature.
ISSUE 1 - JANUARY 2006
SEMICONDUCTORS
2
ZXM66P03N8
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
Drain-Source Breakdown Voltage
V (BR)DSS
-30
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State
Resistance (1)
R DS(on)
Forward Transconductance (1)(3)
g fs
14.4
S
Input Capacitance
C iss
1979
pF
Output Capacitance
C oss
743
pF
Reverse Transfer Capacitance
C rss
279
pF
Turn-On Delay Time
t d(on)
7.6
ns
Rise Time
tr
16.3
ns
Turn-Off Delay Time
t d(off)
94.6
ns
Fall Time
tf
39.6
ns
Gate Charge
Qg
36
nC
Total Gate Charge
Qg
62.5
nC
Gate-Source Charge
Q gs
4.9
nC
Gate Drain Charge
Q gd
19.6
nC
STATIC
V
I D =-250µA, V GS =0V
-1
µA
V DS =-24V, V GS =0V
-100
nA
-1.0
V
0.025 Ω
0.035 Ω
V GS =±20V, V DS =0V
I =-250µA, V DS =
D
V GS
V GS =-10V, I D =-5.6A
V GS =-4.5V, I D =-2.8A
V DS =-15V,I D =-5.6A
DYNAMIC (3)
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =-15V, I D =-5.6A
R G =6.2Ω, V GS =-10V
V DS =-15V,V GS =-5V
I D =-5.6A
V DS =-15V,V GS =-10V
I D =-5.6A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
-0.95 V
Reverse Recovery Time (3)
t rr
35
ns
Reverse Recovery Charge(3)
Q rr
39.9
nC
T j =25°C, I S =-5.6A,
V GS =0V
T j =25°C, I F =-5.6A,
di/dt= 100A/µs
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JANUARY 2006
3
SEMICONDUCTORS
ZXM66P03N8
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Min
Max
Min
Max
A
4.80
4.98
0.189
0.196
B
1.27 BSC
0.05 BSC
C
0.53 REF
0.02 REF
D
0.36
0.46
0.014
0.018
E
3.81
3.99
0.15
0.157
F
1.35
1.75
0.05
0.07
G
0.10
0.25
0.004
0.010
J
5.80
6.20
0.23
0.24
K
0°
8°
0°
8°
L
0.41
1.27
0.016
0.050
© Zetex Semiconductors plc 2006
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for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JANUARY 2006
SEMICONDUCTORS
4