Production specification PNP Silicon Epitaxial Planar Transistor BC807W FEATURES Pb z For general AF applications. z High collector current. z High current gain. z Low collector-emitter saturation voltage. z Complements the BC817W. Lead-free APPLICATIONS z SOT-323 For general purpose amplification and switching. ORDERING INFORMATION Type No. BC807-16W/25W/40W Marking Package Code 5A/5B/5C SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA ICM Peak Collector Current -1 A IB Base Current -0.1 A IBM Peak Base Ccurrent -0.2 A PC Collector Dissipation 250 mW Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ F044 Rev.A www.gmicroelec.com 1 Production specification PNP Silicon Epitaxial Planar Transistor BC807W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO -45 V Emitter-base breakdown voltage V(BR)EBO -5 V Collector cut-off current Emitter cut-off current DC current gain IC=-10mA,IB=0 IE=-10μA,IC=0 TYP MAX UNIT VCB=-20V,IE=0 -0.1 μA VCB=-20V,IE=0,TA=150℃ -50 μA VEB=-4V,IB=0 -0.1 μA ICBO IEBO hFE VCE=-1V,IC=-100mA BC807-16W BC807-25W BC807-40W 100 160 250 VCE=-1V,IC=-300mA BC807-16W BC807-25W BC807-40W 60 100 170 160 250 350 250 400 600 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.7 V Base-emitter voltage VBE(sat) IC=-500mA, IB=-50mA -1.2 V Transition frequency fT VCE=-5V, IC=-50mA f=100MHz 200 MHz Collector-base capacitance Ccb VCB=-10V,f=1MHz 10 pF Emitter-base capacitance Ceb VEB=-0.5V,f=1MHz 60 pF F044 Rev.A www.gmicroelec.com 2 Production specification PNP Silicon Epitaxial Planar Transistor BC807W TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified F044 Rev.A www.gmicroelec.com 3 Production specification PNP Silicon Epitaxial Planar Transistor F044 Rev.A BC807W www.gmicroelec.com 4 Production specification PNP Silicon Epitaxial Planar Transistor BC807W PACKAGE OUTLINE Plastic surface mounted package SOT-323 A SOT-323 E K B C D J G Dim Min Max A 2.00 2.20 B 1.15 1.35 C 0.95 Typical D 0.30 Typical E 0.25 0.40 G 1.2 1.4 H 0.02 0.10 H J K 0.10 Typical 2.20 2.40 All Dimensions in mm SOLDERING FOOTPRINT 0.65 0.65 1.90 0.90 0.70 Unit : mm PACKAGE INFORMATION Device Package Shipping BC807W SOT-323 3000/Tape&Reel F044 Rev.A www.gmicroelec.com 5