PHILIPS BAT56 Schottky barrier diode Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BAT56
Schottky barrier diode
Preliminary specification
File under Discrete Semiconductors, SC01
Philips Semiconductors
December 1993
Philips Semiconductors
Preliminary specification
Schottky barrier diode
FEATURES
• Low leakage current
BAT56
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
• Low turn-on and high breakdown
voltage
VR
continuous reverse voltage
• Ultra-fast switching speed.
IF
continuous forward current
30
mA
VF
forward voltage
IF = 1 mA
410
mV
DESCRIPTION
IR
reverse current
VR = 60 V
200
nA
Tj
junction temperature
150
°C
Cd
diode capacitance
VR = 1 V
1.6
pF
Silicon epitaxial Schottky barrier
diode with an integrated guard ring for
stress protection. Intended for high
speed switching, circuit protection
and voltage clamping applications.
60
PIN CONFIGURATION
The diode is encapsulated in a
SOD123 SMD plastic package.
k
a
MAM058
Top view
Fig.1 Simplified outline (SOD123) and symbol.
December 1993
2
V
Philips Semiconductors
Preliminary specification
Schottky barrier diode
BAT56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
−
60
V
IF
continuous forward current
−
30
mA
IFRM
repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
−
100
mA
IFSM
non-repetitive peak forward
current
tp < 10 ms
−
250
mA
Tstg
storage temperature
−65
+150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
THERMAL RESISTANCE
SYMBOL
Rth j-a
PARAMETER
THERMAL RESISTANCE
from junction to ambient; note 1
500 K/W
Note
1. Printed-circuit board mounting (SOD123 standard conditions).
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
CONDITIONS
forward voltage
MIN.
MAX.
UNIT
IF = 0.1 mA
−
330
mV
IF = 1 mA
−
410
mV
IF = 15 mA
−
1
V
V(BR)R
reverse breakdown voltage
IR = 10 µA
60
−
V
IR
reverse current
VR = 30 V; note 1
−
100
nA
VR = 60 V; note 1
−
200
nA
Cd
diode capacitance
VR = 1 V; f = 1 MHz
−
1.6
pF
Note
1. Pulsed test: tp = 300 µs ; δ = 0.02.
December 1993
3
Philips Semiconductors
Preliminary specification
Schottky barrier diode
BAT56
MRA803
10 2
MRA805
10 2
IR
(µA)
IF
(mA)
(1)
10
10
(2)
1
1
10 1
(3)
10 1
10
(1)
10 2
0
2
(2) (3) (4)
0.2
0.4
0.6
0.8
10 3
1
0
20
(1)
Tamb = 125 °C.
(2)
Tamb = 85 °C.
(1)
Tamb = 150 °C.
(3)
Tamb = 25 °C.
(2)
Tamb = 85 °C.
(4)
Tamb = −40 °C.
(3)
Tamb = 25 °C.
Fig.2 Forward current as a function of
forward voltage.
Cd
(pF)
1.5
1
0.5
0
0
20
40
60
80
VR (V)
f = 1 MHz.
Fig.4 Diode capacitance as a function of
reverse voltage.
December 1993
60
80
Fig.3 Reverse current as a function of
reverse voltage.
MRA804
2
40
VR (V)
VF (V)
4
Philips Semiconductors
Preliminary specification
Schottky barrier diode
BAT56
PACKAGE OUTLINE
17 o max (2x)
andbook, full pagewidth
12 o max (2x)
0.55
0.40
1.35
max
0.19
0.12
0.1
max
0.25
min
,,,
,,,
,,,
,,,
,,,
5o max (2x)
12 o max (2x)
cathode colour band
1.7
1.4
0.70
0.50
A
2.85
2.55
3.85
3.55
0.2 M
Dimensions in mm.
Fig.5 SOD123.
December 1993
5
A
MBA038 - 2
Philips Semiconductors
Preliminary specification
Schottky barrier diode
BAT56
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
December 1993
6
Philips Semiconductors
Preliminary specification
Schottky barrier diode
BAT56
NOTES
December 1993
7
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