Fairchild NM27LV010T250 1,048,576-bit (128k x 8) low voltage eprom Datasheet

NM27LV010
1,048,576-Bit (128k x 8) Low Voltage EPROM
General Description
Features
The NM27LV010 is a high performance Low Voltage Electrically
Programmable Read Only Memory. It is manufactured using
Fairchild’s AMG™ EPROM technology. This technology allows
the part to operate at speeds as fast as 200 ns.
■ 3.0V to 3.6V operation
■ 200 ns access time
■ Low current operation
— 8 mA ICC active current @ 5 MHz (typ.)
— 20µA ICC standby current @ 5 MHz (typ.)
This Low Voltage and Low Power EPROM is designed with power
sensitive hand held and portable battery products in mind. This
allows for code storage of firmware for applications like notebook
computers, palm top computers, cellular phones, and HDD.
■ Ultra low power operation
— 66 µW standby power @ 3.3V
— 50 mW active power @ 3.3V
■ Surface mount package options|
— 32-pin TSOP
— 32-pin PLCC
Small outline packages are just as critical to portable applications
as Low Voltage and Low Power.
The NM27LV010 is one member of Fairchild’s growing Low
Voltage product Family.
Block Diagram
Vcc
Data Outputs O0 - O7
GND
Vpp
OE
PGM
CE
Output Enable,
Chip Enable &
Program Logic
Output
Buffers
Y
Decoder
A0 - A16
Address
Inputs
1,048,576-Bit
Cell Matrix
X
Decoder
DS011377-1
AMG™ is a trademark of WSI, Incorporated.
© 1998 Fairchild Semiconductor Corporation
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
July 1998
PLCC Pin Configuration
A12
A15
A16
XX/VPP
VCC
XX/PGM
XX
TSOP Pin Configuration
4
2
1 32 31 30
29
28
27
26
25
24
23
22
21
5
6
7
8
9
10
11
12
13
14 15 16 17 18 19 20
A14
A13
A8
A9
A11
OE
A10
CE
O7
O1
O2
GND
O3
O4
O5
O6
A7
A6
A5
A4
A3
A2
A1
A0
O0
3
A11
A9
A8
A13
A14
NC
PGM
VCC
VPP
A16
A15
A12
A7
A6
A5
A4
DS011377-6
1
2
3
4
5
6
7
8 8 x 20 MM
9
TSOP
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
O7
O6
O5
O4
O3
VSS
O2
O1
O0
A0
A1
A2
A3
DS011377-2
Top View
Top View
Commercial Temperature Range
(0°C to +70°C) VCC = 3.3 ± 0.3
Industrial Temperature Range
(-40°C to +85°C) VCC = 3.3 ± 0.3
Parameter/Order Number
Access Time (ns)
Parameter/Order Number
Access Time (ns)
NM27LV010 V, T 200
200
NM27LV010 VE, TE
200
NM27LV010 V, T 250
250
NM27LV010 VE, TE
250
Package Types: NM27LV010 V, T
Pin Names
A0–A16
V = PLCC
Addresses
CE
Chip Enable
OE
Output Enable
O0–O7
Outputs
PGM
Program
XX
Don’t Care (During Read)
VPP
Programming Voltage
T = TSOP
• All packages conform to the JEDEC standard.
• All versions are guaranteed to function for slower speeds.
• Consult the Fairchild Sales office on new released products
and packages.
• Consult the Fairchild representative for custom products for
your specific application.
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Connection Diagrams
Storage Temperature
All Output Voltages with
Respect to Ground (Note 10)
VCC + 1.0V
to GND - 0.6V
-65°C to +150°C
All Input Voltages except A9 with
Respect to Ground (Note 10)
VPP and A9 with Respect to Ground
VCC Supply Voltage with
Respect to Ground
Operating Range
-0.6V to +7V
Range
-0.6V to +14V
-0.6V to +7V
ESD Protection
Temperature
VCC
Tolerance
Commercial
0°C to +70°C
3.3V
±0.3V
Industrial
-40°C to +85°C
3.3V
±0.3V
>2000V
DC Electrical Characteristics Over Operating Range with VPP = VCC
Symbol
Min
Max
Units
VIL
Input Low Level
Parameter
Test Conditions
-0.3
0.7
V
VIH
Input High Level
2.0
VCC + 0.3
V
0.4
V
VOL1
Output Low Voltage (TTL)
IOL = 2.0 mA
VOH1
Output High Voltage (TTL)
IOH = -2.0 mA
VOL2
Output Low Voltage
IOL = 100 µA
VOH2
Output High Voltage (CMOS)
IOH = -100 µA
ISB1
VCC Standby Current
(CMOS)
ISB2
2.4
V
0.2
V
CE = VCC ± 0.3V
50
µA
VCC Standby Current (TTL)
CE = VIH
100
µA
ICC
VCC Active Current
CE = OE = VIL,
I/O = 0 µA
15
mA
IPP
VPP Supply Current
VPP = VCC
10
µA
VPP
VPP Read Voltage
ILI
Input Load Current
VIN = 3.0V or GND
ILO
Output Leakage Current
VOUT = 3.0V or GND
VCC - 0.3
f = 5 MHz
VCC - 0.7
-1
VCC
V
1
µA
10
µA
AC Electrical Characteristics Over Operating Range with VPP = VCC
Symbol
Parameter
200
Min
250
Max
Min
Units
Max
tACC
Address to Output Delay
200
250
tCE
CE to Output Delay
200
250
tOE
OE to Output Delay
70
75
tDF
(Note 2)
Output Disable to Output Float
50
50
tOH
(Note 2)
Output Hold from Addresses,
CE or OE , Whichever
Occurred First
0
ns
0
3
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Absolute Maximum Ratings (Note 1)
Symbol
Parameter
CIN
COUT
Conditions
Input Capacitance
VIN = 0V
Output Capacitance
VOUT = 0V
Typ
Max
Units
9
15
pF
12
15
pF
AC Test Conditions
Output Load
1 TTL Gate and CL = 100 pF (Note 8)
≤5 ns
Input Rise and Fall Times
Input Pulse Levels
0.45V to 2.4V
Timing Measurement Reference Level
Inputs
Outputs
0.8V and 2V
0.8V and 2V
AC Waveforms (Note 6) , (Note 7) , and (Note 9)
ADDRESS
2.0V
0.8V
CE
2.0V
0.8V
Address Valid
,,
,
t CF
(Note 2, 4, 5)
t CE
OE
2.0V
0.8V
t OE
(Note 3)
OUTPUT
2.0V
0.8V
t DF
(Note 2, 4, 5)
Hi-Z
Valid Output
t ACC
t OH
(Note 3)
DS011377-3
Note 1: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operations sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Note 2: This parameter is only sampled and is not 100% tested.
Note 3: OE may be delayed up to tACC - tCE after the falling edge of CE without impacting tACC.
Note 4: The tDF and tCF compare level is determined as follows:
High to TRI-STATE®, the measured VOH1 (DC) - 0.10V;
Low to TRI-STATE, the measured VOL1 (DC) + 0.10V.
Note 5: TRI-STATE may be attained using OE or CE .
Note 6: The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.2 µF ceramic capacitor be used on every device
between VCC and GND.
Note 7: The outputs must be restricted to VCC + 1.0V to avoid latch-up and device damage.
Note 8: 1 TTL Gate: IOL = 1.6 mA, IOH = -400 µA.
CL: 100pF includes fixture capacitance.
Note 9: VPP may be connected to VCC except during programming.
Note 10: Inputs and outputs can undershoot to -2.0V for 20 ns Max.
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Capacitance (Note 2) TA = +25°C, 1 = 1 MHz
Symbol
Parameter
Conditions
Min
Typ
Max
Units
tAS
Address Setup Time
1
µs
tOES
OE Setup Time
1
µs
tCES
CE Setup Time
1
µs
tDS
Data Setup Time
1
µs
tVPS
VPP Setup Time
1
µs
tVCS
VCC Setup Time
1
µs
tAH
Address Hold Time
0
µs
tDH
Data Hold Time
1
µs
tDF
Output Enable to Output
Float Delay
tPW
Program Pulse Width
105
µs
tOE
Data Valid from OE
CE/PGM = VIL
100
ns
IPP
VPP Supply Current
during Programming Pulse
CE/PGM = VIL
20
mA
ICC
VCC Supply Current
20
mA
TA
Temperature Ambient
20
25
30
°C
VCC
Power Supply Voltage
6.25
6.5
6.75
V
VPP
Programming Supply Voltage
12.5
12.75
13.0
V
tFR
Input Rise, Fall Time
CE/PGM = VIL
0
60
45
50
ns
5
ns
VIL
Input Low Voltage
VIH
Input High Voltage
2.4
tIN
Input Timing Reference Voltage
0.8
2.0
V
Output Timing Reference Voltage
0.8
2.0
V
tOUT
0.0
0.45
4.0
V
V
Programming Waveform (Note 13)
Program
Addresses
2.0V
0.8V
Program Verify
Address N
t AH
t AS
2.0V
Data
Hi-Z
Data In Stable
ADD N
0.8V
t DS
Data Out Valid
ADD N
t DH
t DF
VCC
VPP
6.25V
t VCS
12.75V
t VPS
t CES
CE
PGM
2.0V
0.8V
tOES
tOE
t PW
OE
2.0V
0.8V
DS011377-4
Note 11: Fairchild’s standard product warranty applies to devices programmed to specifications described herein.
Note 12: VCC must be applied simultaneously or before VPP and removed simultaneously or after VPP. The EPROM must not be inserted into or removedfrom a board with
voltage applied to VPP or VCC.
Note 13: The maximum absolute allowable voltage which may be applied to the VPP pin during programming is 14V. Care must be taken when switching the VPP supply to
prevent any overshoot from exceeding this 14V maximum specification. At least a 0.1 µF capacitor is required across VPP, VCC to GND to suppress spurious voltage transients
which may damage the device.
Note 14: During power up the PGM pin must be brought high (≥ VIH) either coincident with or before power is applied to VPP.
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Programming Characteristics (Note 11), (Note 12), (Note 13) and (Note 14)
NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
LV Turbo Programming Algorithm Flow Chart
VCC = 6.5V VPP = 12.75V
n=0
ADDRESS = FIRST LOCATION
PROGRAM ONE 50µs PULSE
INCREMENT n
NO
DEVICE
FAILED
YES
n = 10?
FAIL
VERIFY
BYTE
PASS
LAST
ADDRESS
?
NO
INCREMENT
ADDRESS
n=0
YES
ADDRESS = FIRST LOCATION
VERIFY
BYTE
FAIL
PASS
INCREMENT
ADDRESS
NO
PROGRAM ONE
50 µs
PULSE
LAST
ADDRESS
?
YES
CHECK ALL BYTES
1ST: VCC = VPP = 5.0V
2ND: VCC = VPP = 3.0V
DS011377-5
Note:
The standard National Semiconductor algorithm may also be used but it will have longer programming time.
FIGURE 1.
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DEVICE OPERATION
The six modes of operation of the EPROM are listed in Table 1. It
should be noted that all inputs for the six modes are at TTL levels.
The power supplies required are VCC and VPP. The VPP power
supply must be at 12.75V during the three programming modes,
and must be at 3.3V in the other three modes. The VCC power
supply must be at 6.5V during the three programming modes, and
at 3.3V in the other three modes.
When the address and data are stable, an active low, TTL program
pulse is applied to the PGM input. A program pulse must be
applied at each address location to be programmed. The EPROM
is programmed with the LV Turbo Programming Algorithm shown
in Figure 1. Each Address is programmed with a series of 50 µs
pulses until it verifies good, up to a maximum of 10 pulses. Most
memory cells will program with a single 50 µs pulse. (The standard
National Semiconductor Algorithm may also be used, but it will
have longer programming time.)
Read Mode
The EPROM has two control functions, both of which must be
logically active in order to obtain data at the outputs. Chip Enable
(CE) is the power control and should be used for device selection.
Output Enable (OE) is the output control and should be used to
gate data to the output pins, independent of device selection.
Assuming that addresses are stable, address access time (tACC)
is equal to the delay from CE to output (tCE). Data is available at
the outputs tOE after the falling edge of OE, assuming that CE has
been low and addresses have been stable for at least tACC –tOE.
The EPROM must not be programmed with a DC signal applied to
the PGM input.
Programming multiple EPROM in parallel with the same data can
be easily accomplished due to the simplicity of the programming
requirements. Like inputs of the parallel EPROM may be connected together when they are programmed with the same data.
A low level TTL pulse applied to the PGM input programs the
paralleled EPROM.
Standby Mode
The EPROM has a standby mode which reduces the active power
dissipation by over 99%, from 50 mW to 0.17 mW. The EPROM
is placed in the standby mode by applying a CMOS high signal to
the CE input. When in standby mode, the outputs are in a high
impedance state, independent of the OE input.
Program Inhibit
Programming multiple EPROM’s in parallel with different data is
also easily accomplished. Except for CE, all like inputs (including
OE and PGM) of the parallel EPROM may be common. A TTL low
level program pulse applied to an EPROM’s PGM input with CE at
VIL and VPP at 12.75V will program that EPROM. A TTL high level
CE input inhibits the other EPROM’s from being programmed.
Output Disable
The EPROM is placed in output disable by applying a TTL high
signal to the OE input. When in output disable all circuitry is
enabled, except the outputs are in a high impedance state (TRISTATE).
Program Verify
A verify should be performed on the programmed bits to determine
whether they were correctly programmed. The verify may be
performed with V PP at 6.25V. VPP must be at VCC, except during
programming and program verify.
Output OR-Tying
Because the EPROM is usually used in larger memory arrays,
Fairchild has provided a 2-line control function that accommodates this use of multiple memory connections. The 2-line control
function allows for:
AFTER PROGRAMMING
Opaque labels should be placed over the EPROM window to
prevent unintentional erasure. Covering the window will also
prevent temporary functional failure due to the generation of photo
currents.
1. the lowest possible memory power dissipation, and
2. complete assurance that output bus contention will not
occur.
MANUFACTURER’S IDENTIFICATION CODE
To most efficiently use these two control lines, it is recommended
that CE be decoded and used as the primary device selecting
function, while OE be made a common connection to all devices
in the array and connected to the READ line from the system
control bus. This assures that all deselected memory devices are
in their low power standby modes and that the output pins are
active only when data is desired from a particular memory device.
The EPROM has a manufacturer’s identification code to aid in
programming. When the device is inserted in an EPROM programmer socket, the programmer reads the code and then
automatically calls up the specific programming algorithm for the
part. This automatic programming control is only possible with
programmers which have the capability of reading the code.
Programming
The Manufacturer’s Identification code, shown in Table 2, specifically identifies the manufacturer and device type. The code for the
NM27LV010 is “8F86”, where “8F” designates that it is made by
Fairchild Semiconductor, and “86” designates a 1 Megabit (128k
x 8) part.
CAUTION: Exceeding 14V on pin 1 (VPP) will damage the EPROM.
Initially, and after each erasure, all bits of the EPROM are in the
“1’s” state. Data is introduced by selectively programming “0’s”
into the desired bit locations. Although only “0’s” will be programmed, both “1’s” and “0’s” can be presented in the data word.
The only way to change a “0” to a “1” is by ultraviolet light erasure.
The code is accessed by applying 12V ±0.5V to address pin A9.
Addresses A1–A8, A10–A16, and all control pins are held at VIL.
Address pin A0 is held at VIL for the manufacturer’s code, and held
at VIH for the device code. The code is read on the lower eight data
pins, O0–07. Proper code access is only guaranteed at 25°C ±
5°C.
The EPROM is in the programming mode when the VPP power
supply is at 12.75V and OE is at VIH. It is required that at least a
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
0.1 µF capacitor be placed across VPP and VCC to ground to
suppress spurious voltage transients which may damage the
device. The data to be programmed is applied 8 bits in parallel to
the data output pins. The levels required for the address and data
inputs are TTL.
Functional Description
ring. Incomplete erasure will cause symptoms that can be misleading. Programmers, components, and even system designs
have been erroneously suspected when incomplete erasure was
the problem.
ERASURE CHARACTERISTICS
The erasure characteristics of the device are such that erasure
begins to occur when exposed to light with wavelengths shorter
than approximately 4000 Angstroms (Å). It should be noted that
sunlight and certain types of fluorescent lamps have wavelengths
in the 3000Å – 4000Å range.
SYSTEM CONSIDERATION
The power switching characteristics of EPROMs require careful
decoupling of the devices. The supply current, ICC, has three
segments that are of interest to the system designer: the standby
current level, the active current level, and the transient current
peaks that are produced by voltage transitions on input pins. The
magnitude of these transient current peaks is dependent on the
output capacitance loading of the device. The associated VCC
transient voltage peaks can be suppressed by properly selected
decoupling capacitors. It is recommended that at least a 0.1 µF
ceramic capacitor be used on every device between VCC and
GND. This should be a high frequency capacitor of low inherent
inductance. In addition, at least a 4.7 µF bulk electrolytic capacitor
should be used between VCC and GND for each eight devices. The
bulk capacitor should be located near where the power supply is
connected to the array. The purpose of the bulk capacitor is to
overcome the voltage drop caused by the inductive effects of the
PC board traces.
The recommended erasure procedure for the EPROM is exposure to short wave ultraviolet light which has a wavelength of
2537Å. The integrated dose (i.e., UV intensity x exposure time) for
erasure should be a minimum of 30W-sec/cm2 .
The EPROM should be placed within 1 inch of the lamp tubes
during erasure. Some lamps have a filter on their tubes which
should be removed before erasure.
An erasure system should be calibrated periodically. The distance
from lamp to device should be maintained at one inch. The erasure
time increases as the square of the distance from the lamp (if
distance is doubled the erasure time increases by factor of 4).
Lamps lose intensity as they age. When a lamp has aged, the
system should be checked to make certain full erasure is occur-
Mode Selection
The modes of operation of the NM27LV010 are listed in Table 1. A single 3.3V power supply is required in the read mode. All inputs are
TTL levels except for VPP and A9 for device signature.
TABLE 1. Modes Selection
Pins
CE
OE
PGM
VPP
VCC
Outputs
VIL
VIL
X
VCC
3.3V
DOUT
X (Note 15)
VIH
X
VCC
3.3V
High Z
Mode
Read
Output Disable
Standby
VIH
X
X
VCC
3.3V
High Z
Programming
VIL
VIH
VIL
12.75V
6.25V
DIN
Program Verify
VIL
VIL
VIH
12.75V
12.75V
DOUT
Program Inhibit
VIH
VIH
X
12.75V
6.25V
High Z
Note 15: X can be VIL or VIH .
TABLE 2. Manufacturer’s Identification Code
Pins
A0
(12)
A9
(26)
O7
(21)
O6
(20)
O5
(19)
O4
(18)
O3
(17)
O2
(15)
O1
(14)
O0
(13)
Hex
Data
Manufacturer Code
VIL
12V
1
0
0
0
1
1
1
1
8F
Device Code
VIH
12V
1
0
0
0
0
1
1
0
86
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Functional Description (Continued)
20.0 ± 0.2
0.96 - 1.06
8.0 ± 0.2
32
1
0.5
16
17
0.15-0.25 TYP
0.150±0.08
(Leadframe
Thickness)
18.4 ± 0.1
0.10
See Detail A
1.27 MAX
0°-5°
0-0.25
0.4-0.6
DETAIL A
Typical
32-Lead TSOP Package (T)
Order Number NM27LV010TXXX
Package Number MBH32A
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NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Physical Dimensions inches (millimeters) unless otherwise noted
NM27LV010 1,048,576-Bit (128k x 8) Low Voltage EPROM
Physical Dimensions inches (millimeters) unless otherwise noted
0.485-0.495
[12.32-12.57]
0.007[0.18] S B D-E S
0.449-0.453
[11.40-11.51]
-A0.045
[1.143]
0.002[0.05] S B
0.000-0.010
[0.00-0.25]
Polished Optional
-H-
0.106-0.112
[2.69-2.84]
0.007[0.18] S B D-E S
Base
Plane
0.023-0.029
[0.58-0.74]
0.015
[0.38] Min Typ
-D1
30
60
°
4
29
5
0.490-0530
[12.45-13.46]
0.400
( [10.16] )
0.549-0.553
[13.94-14.05]
-G0.541-0.545
[13.74-13-84]
-B0.585-0.595
[14.86-15.11]
0.015[0.38] S
C
D-E, F-G S
-F-
13
21
14
-J-
0.007[0.18] M
A F-G S
0.007[0.18] S
0.007[0.18] S
See detail A
-E-
0.002[0.05] S A
0.013-0.021
TYP
[0.33-0.53]
0.050
20
0.123-0.140
[3.12-3.56]
A F-G S
-C0.004[0.10]
0.118-0.129
[3.00-3.28]
0.010[0.25] L
B A D-E, F-G S
B
,,
0.042-0.048
45°X [1.07-1.22]
B
0.020
[0.51]
0.025
[0.64] Min
D-E, F-G S
0.005 Max
[0.13]
0.0100
[0.254]
0.045
[1.14]
Detail A
Typical
Rotated 90°
0.021-0.027
[0.53-0.69]
0.025
[0.64] Min
C
0.078-0.095
[1.98-2.41]
R
0.030-0.040
[0.76-1.02]
0.065-0.071
[1.65-1.80]
0.053-0.059
[1.65-1.80]
0.007[0.18] S
0.031-0.037
[0.79-0.94]
0.006-0.012
[0.15-0.30]
0.026-0.032
Typ
[0.66-0.81]
H D-E, F-G S
0.027-0.033
[0.69-0.84]
0.019-0.025
[0.48-0.64]
Section B-B
Typical
32-Lead PLCC Package
Order Number NM27LV010VXXX
Package Number VA32A
Life Support Policy
Fairchild's products are not authorized for use as critical components in life support devices or systems without the express written
approval of the President of Fairchild Semiconductor Corporation. As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, and whose failure to perform, when properly
used in accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a significant
injury to the user.
Fairchild Semiconductor
Americas
Customer Response Center
Tel. 1-888-522-5372
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,
or to affect its safety or effectiveness.
Fairchild Semiconductor
Europe
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+44 (0) 1793-856858
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+49 (0) 8141-6102-0
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Fairchild Semiconductor
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Fairchild does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and Fairchild reserves the right at any time without notice to change said circuitry and specifications.
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