ISC BDX88B Isc silicon pnp darlington power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
DESCRIPTION
·High DC Current Gain: hFE= 750(Min)@ IC= -6A
·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A
-80V(Min)- BDX88B; -100V(Min)- BDX88C
·Complement to Type BDX87/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
VALUE
BDX88
-45
BDX88A
-60
BDX88B
-80
BDX88C
-100
BDX88
-45
BDX88A
-60
BDX88B
-80
BDX88C
-100
Collector-Base Voltage
UNIT
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-18
A
IB
Base Current
-200
mA
PC
Collector Power Dissipation
@ TC=25℃
120
W
TJ
Junction Temperature
200
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
MAX
UNIT
1.45
℃/W
BDX88/A/B/C
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
BDX88/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-Emitter
Sustaining Voltage
CONDITIONS
MIN
BDX88
-45
BDX88A
-60
TYP.
MAX
IC= -100mA; IB= 0
UNIT
V
BDX88B
-80
BDX88C
-100
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -6A; IB= -24mA
-2.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -12A; IB= -120mA
-3.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -12A; IB= -120mA
-4.0
V
VBE(on)
Base-Emitter On Voltage
IC= -6A; VCE= -3V
-2.8
V
BDX88
VCB= -45V; IE= 0
VCB= -45V; IE= 0; TC= 150℃
-0.5
-5.0
BDX88A
VCB= -60V; IE= 0
VCB= -60V; IE= 0; TC= 150℃
-0.5
-5.0
BDX88B
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TC= 150℃
-0.5
-5.0
BDX88C
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TC= 150℃
-0.5
-5.0
BDX88
VCE= -22V; IB= 0
BDX88A
VCE= -30V; IB= 0
BDX88B
VCE= -40V; IB= 0
BDX88C
VCE= -50V; IB= 0
ICBO
ICEO
Collector
Cutoff Current
Collector
Cutoff Current
B
B
B
-1.0
mA
-2.0
mA
B
B
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -5A; VCE= -3V
1000
hFE-2
DC Current Gain
IC= -6A; VCE= -3V
750
hFE-3
DC Current Gain
IC= -12A; VCE= -3V
100
isc Website:www.iscsemi.cn
mA
2
18000
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