Kexin BAW56T Switching diode Datasheet

Diodes
SMD Type
Switching Diode
BAS16T;BAW56T
BAV70T;BAV99T
SOT-523
Unit: mm
+0.1
1.6-0.1
+0.1
1.0-0.1
+0.05
0.2-0.05
+0.01
0.1-0.01
+0.05
0.8-0.05
1
+0.15
1.6-0.15
2
0.55
Features
0.35
3
+0.25
0.3-0.05
0.5
+0.1
-0.1
+0.1
0.8-0.1
+0.05
0.75-0.05
1. Base
2. Emitter
3. Collecter
Absolute Maximum Ratings Ta = 25
Parameter
(T a mb =25
Power dissipation
)
Forward Current
Reverse Voltage
Operating and storage junction temperature range
Symbol
Limits
Unit
PD
150
mW
IF
75
mA
VR
85
V
T J , T stg
-55 to +150
Electrical Characteristics Ta = 25
Param eter
Sym bol
Reverse breakdown voltage
V (BR)
Reverse voltage leakage current
Forward
IR
voltage
VF
Diode capacitance
CD
Reverse recovery tim e
t rr
Conditions
Min
I R = 100
85
A
Max
Unit
V
V R =75 V
2
V R =25 V
0.03
I F =1 m A
715
I F =10 m A
855
I F = 50 m A
1000
I F =150 m A
1250
V R =0 V,f=1MHz
1.5
pF
4
ns
A
mV
Marking
Type
BAS16T
BAW56T
BAV70T
BAV99T
Marking
A2
JD
JJ
JE
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