SAVANTIC BU2520A Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BU2520A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits of
large screen colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7.5
V
IC
Collector current (DC)
10
A
ICM
Collector current (Pulse)
25
A
IB
Base current
6
A
IBM
Base current(peak)
9
A
PC
Collector power dissipation
125
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
BU2520A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter breakdown voltage
IC=100mA; IB=0;L=25mH
700
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7.5
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.2A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
1.3
V
ICES
Collector cut-off current
VCE=rated; VBE=0
T=125°C
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=7.5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=0.1A ; VCE=5V
6
13
26
hFE-2
DC current gain
IC=6A ; VCE=5V
5
7
10
Collector capacitance
IE=0 VCB=10V;f=1MHz
CC
CONDITIONS
2
MIN
TYP.
MAX
UNIT
V
13.5
115
V
pF
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
BU2520A
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