PROCESS CPD69 General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 42.5 x 42.5 MILS Die Thickness 12.5 MILS Anode Bonding Pad Area 32 x 32 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 6,200 PRINCIPAL DEVICE TYPES CMR1-02 Series CMR1-02M Series CXR1-04 CXR1-04C CZR1-04 CZR1-04C R5 (5-April 2011) w w w. c e n t r a l s e m i . c o m PROCESS CPD69 Typical Electrical Characteristics R5 (5-April 2011) w w w. c e n t r a l s e m i . c o m