IXYS IXGL200N60B3 Genx3 600v igbt Datasheet

IXGL200N60B3
GenX3TM 600V IGBT
VCES =
IC110 =
VCE(sat) ≤
tfi(typ) =
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
Symbol
Test Conditions
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
IC25
TC = 25°C (limited by leads)
150
A
IC110
TC = 110°C (chip capability)
ICM
TC = 25°C, 1ms
SSOA
VGE = 15V, TVJ = 125°C, RG = 1Ω
(RBSOA)
Clamped inductive load @ VCE ≤ 600V
PC
TC = 25°C
Maximum Ratings
90
A
600
A
ICM = 300
A
400
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
TL
Maximum lead temperature for soldering
300
°C
TSOLD
Plastic body for 10s
260
°C
VISOL
50/60Hz, RMS, 1 minute
2500
V~
IISOL ≤ 1mA
3000
V~
20..120/4.5..27
N/lb.
8
g
FC
t = 1s
Mounting force
Weight
G C C E E
G = Gate
E = Emitter
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
z
z
z
z
z
ICES
VCE = VCES
VGE = 0V
Advantages
z
z
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
IC = 200A
TJ = 125°C
© 2008 IXYS CORPORATION, All rights reserved
1.35
1.65
1.75
Silocon chip on Direct-Copper Bond
(DCB) substrate
Isolated mounting surface
Square RBSOA
High current handling capability
2500V electrical isolation
High power density
Low gate drive requirement
Applications
Characteristic Values
Min.
Typ.
Max.
600
3.0
C = Collector
Features
z
BVCES
VGE(th)
600V
90A
1.50V
183ns
5.0
V
V
200
2
μA
mA
±100
nA
1.50
V
V
V
z
z
z
z
z
z
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS99917B(05/08)
IXGL200N60B3
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
IC = 60A, VCE = 10V, Note 1
95
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg
Qge
Qgc
td(on)
IC = 100A, VGE = 15V, VCE = 0.5 • VCES
Inductive load, TJ = 25°°C
tri
Eon
IC = 100A, VGE = 15V
td(off)
VCE = 300V, RG = 1Ω
160
S
26
1260
97
nF
pF
pF
750
115
245
nC
nC
nC
44
ns
83
1.6
ns
mJ
310
450
ns
tfi
183
300
ns
Eoff
2.9
4.5
mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
42
80
2.4
430
300
4.2
ns
ns
mJ
ns
ns
mJ
0.11
0.31 °C/W
°C/W
Inductive load, TJ = 125°°C
IC = 100A, VGE = 15V
VCE = 300V, RG = 1Ω
RthJC
RthCS
NOTE: BOTTOM HEATSINK MEETS 2,500Vrms ISOLATION TO
THE OTHER PINS.
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGL200N60B3
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
200
350
VGE = 15V
11V
9V
180
160
140
120
100
80
200
150
6V
6V
60
7V
250
7V
IC - Amperes
IC - Amperes
VGE = 15V
11V
9V
300
100
40
20
50
5V
5V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1
2
3
160
7
8
9
125
150
VGE = 15V
1.20
VCE(sat) - Normalized
9V
140
IC - Amperes
6
1.25
VGE = 15V
13V
11V
180
5
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
200
4
VCE - Volts
VCE - Volts
120
7V
100
80
60
I
C
= 200A
I
C
= 150A
I
C
= 100A
1.15
1.10
1.05
1.00
0.95
0.90
40
20
0.85
5V
0
0.80
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
-25
VCE - Volts
0
25
50
75
100
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
160
3.4
3.2
TJ = 25ºC
140
3.0
120
IC - Amperes
2.8
VCE - Volts
2.6
I
2.4
2.2
C
= 200A
150A
100A
2.0
1.8
TJ = 125ºC
25ºC
- 40ºC
100
80
60
40
1.6
20
1.4
1.2
0
5
6
7
8
9
10
11
VGE - Volts
© 2008 IXYS CORPORATION, All rights reserved
12
13
14
15
3.5
4.0
4.5
5.0
VGE - Volts
5.5
6.0
6.5
IXGL200N60B3
Fig. 8. Gate Charge
Fig. 7. Transconductance
16
250
TJ = - 40ºC
225
200
25ºC
I C = 100A
I G = 10mA
12
175
125ºC
150
VGE - Volts
g f s - Siemens
VCE = 300V
14
125
100
10
8
6
75
4
50
2
25
0
0
0
20
40
60
80
100
120
140
160
180
200
0
100
200
IC - Amperes
300
400
500
600
700
800
QG - NanoCoulombs
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
100,000
350
10,000
250
IC - Amperes
Capacitance - PicoFarads
300
Cies
1,000
Coes
200
150
100
100
TJ = 125ºC
50
Cres
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
RG = 1Ω
dV / dt < 10V / ns
0
100
200
VCE - Volts
300
400
500
600
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1.000
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_200N60B3(97)3-28-08-A
IXGL200N60B3
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
4.5
3.5
5.0
3.0
Eoff
4.5
= 100A
3.0
---
- MilliJoules
3.0
Eon -
2.0
TJ = 125ºC , VGE = 15V
VCE = 300V
2.5
1.5
I C = 50A
2.0
1.0
1.5
2
3
4
5
6
7
8
9
3.0
2.5
1.5
2.0
1.2
TJ = 25ºC
1.5
0.6
0.5
0.3
50
10
55
60
65
70
4.5
2.0
1.2
1.5
0.9
I C = 50A
1.0
0.5
65
75
85
95
105
115
- MilliJoules
1.5
t f - Nanoseconds
on
1.8
2.5
55
1300
290
I
C
800
270
700
260
I
C
600
= 50A
500
240
0.3
125
400
230
300
1
2
3
4
5
500
340
300
480
320
tf
280
460
300
RG = 1Ω, VGE = 15V
440
420
td(off) - - - -
RG = 1Ω , VGE = 15V
400
VCE = 300V
380
180
360
TJ = 25ºC
340
80
85
IC - Amperes
© 2008 IXYS CORPORATION, All rights reserved
90
95
400
I C = 50A, 100A
380
360
340
160
320
300
120
75
420
180
140
70
440
200
300
100
65
460
VCE = 300V
220
120
60
10
480
240
320
55
td(off) - - - -
260
140
50
9
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115
280
125
t d(off) - Nanoseconds
260
160
8
500
280
t f - Nanoseconds
TJ = 125ºC
200
7
Fig. 17. Inductive Turn-off
Switching Times vs. Junction Temperature
320
220
6
RG - Ohms
t d(off) - Nanoseconds
t f - Nanoseconds
900
= 100A
280
Fig. 16. Inductive Turn-off
Switching Times vs. Collector Current
tf
1100
1000
250
0.6
1200
300
TJ - Degrees Centigrade
240
0.0
100
t d(off) - Nanoseconds
I C = 100A
45
95
td(off) - - - TJ = 125ºC, VGE = 15V
VCE = 300V
310
2.1
3.0
35
90
tf
320
2.4
VCE = 300V
25
85
330
E
Eoff - MilliJoules
----
RG = 1Ω , VGE = 15V
3.5
80
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
2.7
4.0
75
IC - Amperes
Fig. 14. Inductive Switching
Energy Loss vs. Junction Temperature
Eon
0.9
1.0
RG - Ohms
Eoff
1.8
0.0
0.5
1
2.1
TJ = 125ºC
- MilliJoules
on
Eoff
2.4
VCE = 300V
3.5
on
2.5
2.7
E
3.5
----
RG = 1Ω , VGE = 15V
4.0
E
Eoff - MilliJoules
C
Eoff - MilliJoules
I
4.0
Eon
IXGL200N60B3
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
150
td(on) - - - -
TJ = 125ºC, VGE = 15V
C
= 100A
90
80
I
C
= 50A
4
5
6
7
8
9
60
42
TJ = 25ºC, 125ºC
40
40
38
20
30
50
3
44
40
60
2
70
50
70
30
46
VCE = 300V
50
10
55
60
65
70
75
80
85
90
95
t d(on) - Nanoseconds
100
I
t d(on) - Nanoseconds
110
td(on) - - - -
RG = 1Ω , VGE = 15V
80
120
VCE = 300V
1
48
tr
t r - Nanoseconds
tr
130
t r - Nanoseconds
90
140
36
100
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
90
48
80
46
t r - Nanoseconds
70
tr
44
td(on) - - - -
RG = 1Ω , VGE = 15V
60
42
VCE = 300V
50
40
I
C
= 50A
40
t d(on) - Nanoseconds
I C = 100A
38
30
25
35
45
55
65
75
85
95
105
115
36
125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_200N60B3(97)3-28-08-A
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