DG304B, DG306B, DG307B Vishay Siliconix CMOS Analog Switches DESCRIPTION FEATURES The DG304B, DG306B and DG307B monolithic CMOS switches were designed for applications in communications, instrumentation and process control. This series is well suited for applications requiring fast switching and nearly flat on-resistance over the entire analog range. • • • • • Designed on the Vishay Siliconix PLUS-40 CMOS process to achieve low power consumption and excellent on/off switch performance, these switches are ideal for battery powered applications, without sacrificing switching speed. • Micropower: 30 nW Break-before-make switching action is guaranteed, and an epitaxial layer prevents latchup. Single supply operation (for positive switch voltages) is allowed by connecting the V- rail to 0 V. Each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. These switches are CMOS input compatible. ± 15 V input range Fast switching - tON: 110 ns Low RDS(on): 30 Single supply operation CMOS logic levels BENEFITS • • • • Full rail-to-rail analog signal range Low signal error Wide dynamic range Low power dissipation APPLICATIONS • Low level switching circuits • Programmable gain amplifiers • Portable and battery powered systems FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION NC D1 NC S1 NC IN1 GND Plastic DIP DG306B Plastic DIP DG304B V+ NC D2 V+ 1 14 S3 2 13 S4 NC D3 3 12 D4 11 S2 D1 4 11 D2 5 10 NC S1 5 10 S2 6 9 IN2 IN1 6 9 IN2 1 14 2 13 3 12 4 8 7 GND V- 7 Top View Top View 8 V- TRUTH TABLE TRUTH TABLE Logic Switch Logic Switch 0 OFF 0 OFF 1 ON 1 ON Logic “0” 3.5 V Logic “1” 11 V Logic “0” 3.5 V Logic “1” 11 V * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71403 S11-0303-Rev. D, 28-Feb-11 www.vishay.com 1 DG304B, DG306B, DG307B Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Plastic DIP DG307B NC V+ 1 14 S3 2 13 S4 D3 3 12 D4 D1 4 11 D2 S1 5 10 S2 IN1 6 9 IN2 GND 7 Top View V- 8 Four SPST switches per package TRUTH TABLE Logic SW1, SW2 SW3, SW4 0 OFF ON 1 ON OFF Logic “0” 3.5 V Logic “1” 11 V ORDERING INFORMATION Temp. Range - 40 °C to 85 °C Package 14-Pin Plastic DIP Standard Part Number Lead (Pb)-free Part Number DG304BDJ DG304BDJ-E3 DG306BDJ DG306BDJ-E3 DG307BDJ DG307BDJ-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Limit Voltages Referenced V+ to V- 25 (V-) - 2 to (V+) + 2 or 30 mA, whichever occurs first 30 GND Digital Inputs a, VS, VD Current (Any Terminal) Continuous Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) Storage Temperature Power Dissipationb Unit 44 14-Pin Plastic DIPc 100 V mA - 65 to 150 °C 470 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 11 mW/°C above 25 °C. www.vishay.com 2 Document Number: 71403 S11-0303-Rev. D, 28-Feb-11 DG304B, DG306B, DG307B Vishay Siliconix SPECIFICATIONSa Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VIN = 3.5 V or 11 Vf Limits - 40 °C to 85 °C Temp.b Min.d Full - 15 Typ.c Max.d Unit 15 V 30 50 75 5 100 5 100 5 200 Analog Switch Analog Signal Rangee VANALOG Drain-Source On-Resistance RDS(on) Source Off Leakage Current IS(off) VD = ± 10 V, IS = 10 mA VS = ± 14 V, VD = ± 14 V Drain Off Leakage Current ID(off) Drain On Leakage Current ID(on) VD = VS = ± 14 V Room Full Room Full Room Full Room Full -5 - 100 -5 - 100 -5 - 200 ± 0.1 ± 0.1 ± 0.1 nA Digital Control IINH Input Current with Input Voltage Low IINL VIN = 15 V Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injection tOPEN Q Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Input Capacitance Off-Isolation Crosstalk (Channel-to-Channel) Room Full Room Full Room Full VIN = 5 V Input Current with Input Voltage High CIN OIRR XTALK VIN = 0 V DG305A/307A ONLY, see figure 3 CL = 1 nF, Rgen = 0 , Vgen = 0 V see figure 4 VS, VD = 0 V, f = 1 MHz VIN = 0 V VIN = 15 V VIN = 0 V, RL = 1 k VS = 1 Vrms, f = 500 kHz - 0.001 0.001 -1 Room see figure 2 f = 1 MHz -1 1 µA - 0.001 110 Room 70 Room 50 Room 30 Room 14 Room 14 Room 40 Room 6 Room 7 Room 62 Room 74 Room Full Room Full 0.001 ns pC pF dB Power Supplies Positive Supply Current I+ Negative Supply Current I- VIN = 15 V or 0 V (all inputs) - 100 100 µA - 0.001 Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 71403 S11-0303-Rev. D, 28-Feb-11 www.vishay.com 3 DG304B, DG306B, DG307B Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) TA = 25 °C R DS(on) - Drain-Source On-Resistance () R DS(on) - Drain-Source On-Resistance () 100 80 ±5V 60 ± 7.5 V 40 ± 10 V ± 15 V 20 ± 20 V 0 TA = 25 °C V- = 0 V 100 + 7.5 V 80 + 10 V 60 + 15 V + 20 V 40 20 0 - 20 - 15 - 10 -5 0 5 10 15 0 20 5 10 15 20 VD - Drain Voltage (V) VD - Drain Voltage (V) RDS(on) vs. VD and + Power Supply Voltage RDS(on) vs. VD and ± Power Supply 10 10 TA = 25 °C 9 0 8 ID(off) or IS(off) 7 6 ID(on) V T (V) I S , ID (pA) - 10 - 20 5 4 3 - 30 2 1 - 40 0 - 15 - 12 -9 -6 -3 0 3 6 9 12 15 5 10 15 20 VD or V S - Drain or Source Voltage (V) V+, V- Positive and Negative Supplies (V) Leakage Currents vs. Analog Voltage Input Switching Threshold vs. V+ and VSupply Voltages 240 240 V- = - 15 V TA = 25 °C VINH = 15 V VINL = 0 V 200 V+ = 15 V TA = 25 °C VINH = 15 V VINL = 0 V 200 tON t ON , t OFF (ns) t ON , t OFF (ns) 0 160 120 tOFF 160 tON 120 tOFF 80 80 40 40 0 www.vishay.com 4 5 10 15 0 -5 - 10 - 15 V+ - Positive Supply Voltage (V) V- - Negative Supply Voltage (V) Switching Time vs. Positive Supply Voltage Switching Time vs. Negative Supply Voltage Document Number: 71403 S11-0303-Rev. D, 28-Feb-11 DG304B, DG306B, DG307B Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 V+ = 15 V RL = CL = 0 VS = Open I+, I- (mA) 6 4 2 0 1k 10 k 100 k 1M f - Frequency (Hz) Supply Currents vs. Toggle Frequency SCHEMATIC DIAGRAM (Typical Channel) V+ S VLevel Shift/ Drive VIN V+ GND D V- Figure 1. TEST CIRCUITS + 15 V Logic "1" = Switch On V+ VS = 3 V S Logic Input D VINH 50 % VO 0V IN RL 300 15 V CL 33 pF VS V- GND 90 % 10 % 0V - 15 V CL (includes fixture and stray capacitance) VO = V S Switch Output tON tOFF RL RL + rDS(on) Figure 2. Switching Time Document Number: 71403 S11-0303-Rev. D, 28-Feb-11 www.vishay.com 5 DG304B, DG306B, DG307B Vishay Siliconix TEST CIRCUITS + 15 V V+ VS1 = 3 V VS2 = 3 V S1 D1 S2 D2 Switch Output RL1 300 V- RL2 300 CL1 33 pF CL2 33 pF VINH 50 % 0V VO1 VO2 IN GND Logic "1" = Switch On Logic Input VS1 50 % VO1 0V VS2 VO2 Switch Output 50 % 0V tBBM - 15 V CL (includes fixture and stray capacitance) Figure 3. Break-Before-Make SPDT (DG307B) + 15 V Rg V+ S IN Vg VO D VO VO CL 1 nF 3V INX ON V- GND OFF ON Q = VO x CL - 15 V Figure 4. Charge Injection APPLICATIONS HINTSa VS or VD Analog Voltage Range (V) 0 VIN Logic Input Voltage VINH(min)/VINL(max) (V) 11/3.5 0 11/3.5 - 20 to 20 0 11/3.5 0 to 15 V+ Positive Supply Voltage (V) VNegative Supply Voltage (V) GND Voltage (V) 15 - 15 20 - 20 15 0 - 15 to 15 Notes: a. Application hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. www.vishay.com 6 Document Number: 71403 S11-0303-Rev. D, 28-Feb-11 DG304B, DG306B, DG307B Vishay Siliconix APPLICATIONS - 15 V 10 k VIN 10 k VOUT + 15 V - 15 V 10 k 10 k 100 k 1 M A1 A0 DG304B Binary Input Gain 11 10 01 00 1 10 100 1000 Figure 5. Low Power Binary to 10n Gain Low Frequency Amplifier + 15 V + 15 V - 15 V - 15 V VIN1 VOUT VIN2 CMOS Logic Input Select High = V IN1 - 15 V + 15 V CMOS Logic Gain Select High = 10 x 10 x 1x DG307B GND 20 k 180 k Figure 6. Low Power Instrumentation Amplifier with Digitally Selectable Inputs and Gain Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71403. Document Number: 71403 S11-0303-Rev. D, 28-Feb-11 www.vishay.com 7 Package Information Vishay Siliconix PDIP: 14ĆLEAD 14 13 12 11 10 9 8 E E1 1 2 3 4 5 6 7 D S Q1 A A1 L 15° MAX C B1 e1 B Dim A A1 B B1 C D E E1 e1 eA L Q1 S eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 17.27 19.30 0.680 0.760 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 1.02 2.03 0.040 0.080 ECN: S-03946—Rev. C, 09-Jul-01 DWG: 5481 Document Number: 71260 05-Jul-01 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1