Order this document by MPSW51/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit MPSW51 MPSW51A VCEO –30 –40 Vdc MPSW51 MPSW51A VCBO –40 –50 Vdc VEBO –5.0 Vdc Collector Current — Continuous IC –1000 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Operating and Storage Junction Temperature Range 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max –30 –40 — — –40 –50 — — –5.0 — — — –0.1 –0.1 — –0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) V(BR)CEO MPSW51 MPSW51A V(BR)CBO MPSW51 MPSW51A Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCB = –30 Vdc, IE = 0) (VCB = –40 Vdc, IE = 0) V(BR)EBO Vdc IEBO Vdc µAdc ICBO MPSW51 MPSW51A Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width Vdc µAdc v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 55 60 50 — — — Unit ON CHARACTERISTICS DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) (IC = –1000 mAdc, VCE = –1.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = –1000 mAdc, IB = –100 mAdc) VCE(sat) — –0.7 Vdc Base – Emitter On Voltage (IC = –1000 mAdc, VCE = –1.0 Vdc) VBE(on) — –1.2 Vdc fT 50 — MHz Cobo — 30 pF SMALL– SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –50 mAdc, VCE = –10 Vdc, f = 20 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) –1.0 VCE , COLLECTOR VOLTAGE (VOLTS) h FE , CURRENT GAIN 200 100 70 VCE = –1.0 V TJ = 25°C 50 20 –10 –20 –50 –100 –200 –500 –0.4 –0.2 –50 –100 Figure 2. Collector Saturation Region qV B, TEMPERATURE COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 2 –0.6 Figure 1. DC Current Gain VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = –1.0 V VCE(SAT) @ IC/IB = 10 0 –1.0 –2.0 IC = IC = IC = IC = –100 –250 –500 mA –1000 mA mA mA IB, BASE CURRENT (mA) –0.4 –0.2 IC = –50 mA IC, COLLECTOR CURRENT (mA) TJ = 25°C –0.6 IC = –10 mA TJ = 25°C 0 –0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –1000 –1.0 –0.8 –0.8 –5.0 –10 –20 –50 –100 –200 –500 –1000 –0.8 –1.2 –1.6 qVB for VBE –2.0 –2.4 –2.8 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. “ON” Voltages Figure 4. Temperature Coefficient –500 –1000 Motorola Small–Signal Transistors, FETs and Diodes Device Data 300 160 TJ = 25°C 200 C, CAPACITANCE (pF) f T , CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) VCE = –10 V TJ = 25°C f = 20 MHz 100 70 50 120 80 Cibo 40 Cobo 30 –10 0 –20 –50 –100 –200 –500 –1000 Cobo Cibo IC, COLLECTOR CURRENT (mA) –5.0 –1.0 –10 –15 –20 –2.0 –3.0 –4.0 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Current Gain — Bandwidth Product Figure 6. Capacitance –1.0 k I C , COLLECTOR CURRENT (mA) 1.0 ms –500 1.0 ms 100 ms TA = 25°C TC = 25°C –200 –100 –25 –5.0 DUTY CYCLE ≤ 10% MPSW51 MPSW51A –50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT –20 –10 –1.0 –2.0 –5.0 –10 –20 –30 –40 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. A B R SEATING PLANE P L F DIM A B C D F G H J K L N P R V K X X D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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