ISC IPD122N10N3 N-channel mosfet transistor Datasheet

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤12.2mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High frequency switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
59
A
IDM
Drain Current-Single Pulsed
236
A
PD
Total Dissipation @TC=25℃
94
W
Tj
Max. Operating Junction Temperature
175
℃
-55~175
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
Rth(j-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
isc website:www.iscsemi.cn
1
MAX
UNIT
1.6
℃/W
75
℃/W
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID=1mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=46μA
RDS(on)
Drain-Source On-Resistance
IGSS
MIN
TYP
MAX
100
V
3.5
V
VGS=10V; ID=46A
12.2
mΩ
Gate-Source Leakage Current
VGS= 20V
0.1
μA
IDSS
Drain-Source Leakage Current
VDS=100V; VGS= 0V
1
μA
VSD
Diode forward voltage
IF=46A, VGS = 0V
1.2
V
isc website:www.iscsemi.cn
2
2
UNIT
isc & iscsemi is registered trademark
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