MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 Features • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 300 Vdc Collector-Emitter Voltage V(BR)CEO 300 Vdc Emitter-Base Voltage V(BR)EBO 6.0 Vdc IC 150 mAdc Collector Current − Continuous 2 EMITTER 3 3 1 THERMAL CHARACTERISTICS Rating 1 BASE 2 2 Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 °C Tstg −55+ 150 °C Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 − Vdc Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) V(BR)CBO 300 − Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc, IE = 0) V(BR)EBO 6.0 − Vdc Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) ICBO − 0.1 A Emitter−Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) IEBO Storage Temperature Range 1 SC−59 CASE 318D (SCALE 2:1) SC−70 (SOT−323) CASE 419 (SCALE 2:1) MARKING DIAGRAMS ELECTRICAL CHARACTERISTICS DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 1.0 mAdc) (VCE = 10 Vdc, IC = 30 mAdc) Collector-Emitter Saturation Voltage (Note 2) (IC = 20 mAdc, IB = 2.0 mAdc) 1D = Device Marking Code M = Date Code ORDERING INFORMATION Device − A 0.1 − hFE1 hFE2 25 40 − − VCE(sat) − 0.5 MSD42WT1 Package Shipping† SC−70/SOT−323 3000/Tape & Reel MSD42WT1G SC−70/SOT−323 3000/Tape & Reel MSD42T1 Vdc J1D M 1D M SC−59 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤ 300 s, D.C. ≤ 2%. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 6 1 Publication Order Number: MSD42WT1/D MSD42WT1, MSD42T1 120 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 100 80 25°C 60 40 −55°C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 C, CAPACITANCE (pF) Ceb @ 1MHz 10 1.0 0.1 0.1 Ccb @ 1MHz 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 3. “ON” Voltages http://onsemi.com 2 MSD42WT1, MSD42T1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G 0.05 (0.002) J N C SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 SCALE 10:1 0.7 0.028 mm inches SC−70/SOT−323 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR K H DIM A B C D G H J K L N S MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 MSD42WT1, MSD42T1 PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE F A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. L 3 S 2 DIM A B C D G H J K L S B 1 D G J C MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.09 0.18 0.20 0.60 1.25 1.65 2.50 3.00 INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0034 0.0070 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181 K H SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm inches SC−59 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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