IRF IRL5Y024CM Simple drive requirement Datasheet

PD - 94018A
HEXFET® POWER MOSFET
THRU-HOLE (TO-257AA)
IRL5Y024CM
55V, N-CHANNEL
Product Summary
Part Number
BVDSS
IRL5Y024CM
55V
RDS(on)
0.069Ω
ID
17A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
17
11
68
35
0.28
±16
49
11
3.5
4.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
C
g
For footnotes refer to the last page
www.irf.com
1
10/27/00
IRL5Y024CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
Test Conditions
55
—
—
V
VGS = 0V, ID = 250µA
—
0.06
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
—
1.0
6.0
—
—
—
—
—
—
—
—
—
0.069
0.085
0.109
2.0
—
25
250
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
15
3.7
8.5
11
133
25
66
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
520
140
57
—
—
—
VGS = 10V, ID = 11A ➃
VGS = 5.0V, ID = 11A
VGS = 4.0V, ID = 9.0A
VDS = VGS, ID = 250µA
VDS = 25V, IDS = 11A ➃
VDS = 55V ,VGS=0V
VDS = 44V,
VGS = 0V, TJ =125°C
VGS = 16V
VGS = -16V
VGS =5.0V, ID = 11A
VDS = 44V
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
µA
nA
nC
VDD = 28V, ID = 11A,
VGS =5.0V, RG = 12Ω
ns
nH
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
17
68
1.3
70
120
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 11A, VGS = 0V ➃
Tj = 25°C, IF = 11A, di/dt ≥ 100A/µs
VDD ≤ 30V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
3.57
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRL5Y024CM
100
100
VGS
15V
12V
10V
8.0V
5.0V
4.0V
3.0V
BOTTOM 2.5V
VGS
15V
12V
10V
8.0V
5.0V
4.0V
3.0V
BOTTOM 2.5V
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
2.5V
1
20µs PULSE WIDTH
Tj = 25°C
10
2.5V
1
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
10
15
V DS = 15V
20µs PULSE WIDTH
4
6
8
10
12
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
2
100
Fig 2. Typical Output Characteristics
2.5
TJ = 25 ° C
1
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
1
ID = 17A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRL5Y024CM
1000
VGS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
15
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C iss
600
400
C oss
200
C rss
10
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
8
12
16
20
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
ID, Drain-to-Source Current (A)
100
ISD , Reverse Drain Current (A)
4
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
TJ = 150 ° C
TJ = 25 ° C
1
V GS = 0 V
0.8
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
0.1
0.2
1.4
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
VDS = 44V
VDS = 27V
VDS = 11V
12
0
1
ID = 11A
2.6
10
100µs
1ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRL5Y024CM
20
RD
VDS
VGS
I D , Drain Current (A)
16
D.U.T.
RG
+
-VDD
12
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
P DM
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRL5Y024CM
15V
L
VDS
D .U .T.
RG
IA S
5.0V
20V
D R IV E R
+
- VD D
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
100
TOP
80
BOTTOM
60
40
20
0
25
V (B R )D S S
ID
5.0A
7.0A
11A
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
5.0V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
www.irf.com
IRL5Y024CM
Footnotes:
 Repetitive Rating; Pulse width limited by
ƒ ISD ≤ 11A, di/dt ≤ 222 A/µs,
maximum junction temperature.
‚ VDD = 25 V, Starting TJ = 25°C, L= 0.8mH
Peak IAS = 11A, RG= 25Ω
„ Pulse width ≤ 400 µs; Duty Cycle ≤ 2%
VDD ≤ 55V, TJ ≤ 150°C
Case Outline and Dimensions — TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
www.irf.com
7