UOT MID-32H22 T-1 package npn phototransistor Datasheet

T-1 PACKAGE
NPN PHOTOTRANSISTOR
Description
MID-32H22
Package Dimensions
The MID-32H22 is a NPN silicon phototransistor mou-
Unit : mm (inches )
φ 3.55±0.25
(.140±.010)
nted in a lensed , special dark plastic package. The lens-
φ 3.10±0.20
(.122±.008)
ing effect of the package allows an acceptance half view
angle of 20° that is measured from the optical axis to
4.28±0.20
(.169±.008)
the half power point .
5.28±0.30
(.208±.012)
3.85
(.152)
23.40MIN
(.920)
0.50 TYP.
(.020)
Features
l
Wide range of collector current
l
Lensed for high sensitivity
l
Low cost plastic package
l
Good spectral matching IRED (λp 880/850 nm) type
l
Acceptance view angle : 40o
1.00MIN
(.040)
2.54
(.100)
C
E
Notes :
1. Tolerance is ± 0.25mm (.010") unless otherwise noted .
2. Protruded resin under flange is 1.5 mm (.059") max
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o
@ TA=25 C
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-32H22
Optical-Electrical Characteristics
o
Ee=0.1mW/cm2
VCC =5V, RL=1KΩ
IC=1mA
VCE=10V
Ee=0
VCE=5V
Ee=0.1mW/cm2
1000
100
10
1
0.1
0.01
0.001
0
40
80
120
TA - Ambient Temperature -oC
FIG.1 COLLECTOR DARK CURRENT
VS AMBIENT TEMPERATURE
200
Vcc = 5 V
VRL= 1 V
F = 100 Hz
PW = 1 ms
160
120
80
40
0
0
2
4
6
8
10
RL - Load Resistance - KΩ
FIG.3 RISE AND FALL TIME
VS LOAD RESISTANCE
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
V(BR)CEO
30
V
V(BR)ECO
5
V
600
700
800
900
1000
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
Typ.
Max.
VCE(SAT)
0.4
Tr
Tf
15
15
100
IC(ON)
0.4
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vce = 5
V
µS
ICEO
nA
mΑ
V
Ee = 0.1 mW/cm2
@λ= 940 nm
-75
-25
25
75
125
TA - Ambient Temperature -oC
FIG.2 NORMALIZED COLLECTOR CURRENT
VS AMBIENT TEMPERATURE
Relative Sensitivity
Relative Spectral Sensitivity
Tr Tf Rise and Fall Time - µS
Iceo-Collector Dark Current -µA
Typical Optical-Electrical Characteristic Curves
Min.
IC Normalized Collector Current
Ee=0
Ie=0.1mA
Ee=0
Ic=0.5mA
Symbol
Relative Collector Current (mA)
Test Conditions
Ic=0.1mA
Parameter
Collector-Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector-Emitter
Saturation Voltage
Rise Time
Fall Time
Collector Dark
Current
On State Collector
Current
@ TA=25 C
Unit
10
Vce = 5 V
8
6
4
2
0
0
0.1 0.2 0.3 0.4 0.5 0.6
Ee - Irradiance - mW/cm2
FIG.4 RELATIVE COLLECTOR CURRENT
VS IRRADIANCE
0° 10° 20°
30°
40°
1.0
0.9
50°
60°
70°
80
90°
0.8
0.5 0.3 0.1 0.2 0.4 0.6
FIG.6 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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