ON BD241C Complementary silicon plastic power transistors 80â 100 volt Datasheet

BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
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Designed for use in general purpose amplifier and switching
applications.
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
Features
• Collector−Emitter Saturation Voltage −
VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min) BD241C, BD242C
• High Current Gain − Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• Compact TO−220 AB Package
• Epoxy Meets UL94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
MARKING
DIAGRAM
Machine Model, C u 400 V
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• Pb−Free Packages are Available*
TO−220AB
CASE 221A−09
STYLE 1
MAXIMUM RATINGS
Symbol
BD242B
BD241C
BD242C
Unit
Collector−Emitter Voltage
VCEO
80
100
Vdc
Collector−Emitter Voltage
VCES
90
115
Vdc
Emitter−Base Voltage
VEB
Collector Current
Continuous
Peak
IC
Base Current
IB
1.0
Adc
Total Device Dissipation @
TC = 25°C
Derate above 25°C
PD
40
W
0.32
W/°C
– 65 to + 150
°C
Rating
Operating and Storage
Junction Temperature Range
TJ, Tstg
5.0
1
2
3
BD24xx = Device Code
xx = 1C, 2B, or 2C
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
Vdc
Adc
3.0
5.0
THERMAL CHARACTERISTICS
AYWW
BD24xxG
ORDERING INFORMATION
Device
Package
Shipping
BD241C
TO−220AB
50 Units/Rail
BD241CG
TO−220AB
(Pb−Free)
50 Units/Rail
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
°C/W
BD242B
TO−220AB
50 Units/Rail
Thermal Resistance, Junction−to−Case
RqJC
3.125
°C/W
BD242BG
TO−220AB
(Pb−Free)
50 Units/Rail
BD242C
TO−220AB
50 Units/Rail
BD242CG
TO−220AB
(Pb−Free)
50 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 8
1
Publication Order Number:
BD241C/D
BD241C (NPN), BD242B (PNP), BD242C (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
VCEO
BD242B
BD241C, BD242C
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
BD242B
BD241C, BD242C
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
(VCE = 100 Vdc, VEB = 0)
BD242B
BD241C, BD242C
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
Vdc
80
100
ICEO
0.3
mAdc
ICES
200
mAdc
IEBO
1.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
25
10
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.6 Adc)
VCE(sat)
1.2
Vdc
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| • ftest.
PD, POWER DISSIPATION (WATTS)
40
30
20
10
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
160
MHz
BD241C (NPN), BD242B (PNP), BD242C (PNP)
2.0
VCC
TURN‐ON PULSE
APPROX
+ 11 V
Vin
RL
0.7
0.5
SCOPE
RK
t1
t3
APPROX
+ 11 V
t, TIME (s)
μ
Cjd%Ceb
Vin 0
VEB(off)
- 4.0 V
t1 v 7.0 ns
100 t t2 t 500 ms
t3 t 15 ns
tr @ VCC = 30 V
0.3
tr @ VCC = 10 V
0.1
td @ VBE(off) = 2.0 V
0.07
0.05
Vin
t2
TURN‐OFF PULSE
IC/IB = 10
TJ = 25°C
1.0
0.03
0.02
0.03
DUTY CYCLE [ 2.0%
APPROX - 9.0 V
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 2. Switching Time Equivalent Circuit
1.0
0.7
0.5
3.0
Figure 3. Turn−On Time
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZqJC (t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500 1.0 k
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C, TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10
5.0
1.0 ms
5.0 ms
100 ms
2.0
1.0
0.5
0.2
0.1
5.0
SECOND BREAKDOWN
LIMITED @ TJ v 150°C
THERMAL LIMITATION @ TC = 25°C
BONDING WIRE LIMITED
CURVES APPLY BELOW
RATED VCEO
BD241C, BD242C
10
20
50
IC, COLLECTOR CURRENT (AMP)
100
Figure 5. Active Region Safe Operating Area
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3
BD241C (NPN), BD242B (PNP), BD242C (PNP)
3.0
2.0
0.3
0.2
ts′
tf @ VCC = 30 V
TJ = + 25°C
200
CAPACITANCE (pF)
t, TIME (s)
μ
1.0
0.7
0.5
300
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
tf @ VCC = 10 V
0.1
100
Ceb
70
50
0.07
0.05
0.03
0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
30
0.1
2.0 3.0
Ccb
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Turn−Off Time
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Capacitance
500
hFE, DC CURRENT GAIN
300
100
70
VCE = 2.0 V
TJ = 150°C
25°C
-55°C
50
30
10
7.0
5.0
0.03
0.05 0.07 0.1
0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
TJ = 25°C
1.6
1.2
IC = 0.3 A
θV, TEMPERATURE COEFFICIENTS (mV/°C)
V, VOLTAGE (VOLTS)
TJ = 25°C
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.003 0.005 0.01 0.020.03 0.05
0.1
0.2 0.3 0.5
3.0 A
0.4
0
1.0
2.0
5.0
10
20
50
100 200
IB, BASE CURRENT (mA)
500 1000
Figure 9. Collector Saturation Region
1.4
0.2
1.0 A
0.8
Figure 8. DC Current Gain
1.2
20 30 40
1.0
2.0 3.0
+2.5
+2.0
+1.5
*APPLIES FOR IC/IB ≤ 5.0
TJ = - 65°C TO + 150°C
+1.0
+0.5
*qVC FOR VCE(sat)
0
-0.5
-1.0
-1.5
qVB FOR VBE
-2.0
-2.5
0.003 0.005 0.01 0.02
0.05
0.1
0.2 0.3
0.5
1.0 2.0 3.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
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4
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHM
BD241C (NPN), BD242B (PNP), BD242C (PNP)
IC, COLLECTOR CURRENT (A)
μ
103
102
VCE = 30 V
101
TJ = 150°C
100
100°C
10-1
REVERSE
10-2
FORWARD
25°C
10-3
-0.4 -0.3 -0.2 -0.1
ICES
0
+0.1 +0.2 +0.3
+0.4 +0.5
+0.6
107
VCE = 30 V
IC = 10 x ICES
106
105
IC ≈ ICES
IC = 2 x ICES
104
103
102
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
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5
BD241C (NPN), BD242B (PNP), BD242C (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BD241C/D
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