ASI BLW83 Npn silicon rf power transistor Datasheet

BLW83
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW83 is Designed for use
in transmitting amplifiers operatimg in
theh.f. and v.h.f. bands and for
applications as linear amplifier in
class-A and AB.
PACKAGE STYLE .380 4L FLG
B
FEATURES:
.112 x 45°
• PG = 20 dB min. at 10 W/30 MHz
• IMD3 = -30 dBc max. at 10 W (PEP)
• Omnigold™ Metalization System
A
E
C
B
E
Ø.125 NOM.
FULL R
J
.125
C
D
E
F
I
GH
MAXIMUM RATINGS
IC
3.0 A
VCES
65 V
VCEO
36 V
B
.785 / 19.94
C
.720 / 18.29
.730 / 18.54
4.0 V
D
.970 / 24.64
.980 / 24.89
VEBO
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
.385 / 9.78
E
PDISS
80 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.2 °C/W
F
.004 / 0.10
.006 / 0.15
G
.085 / 2.16
.105 / 2.67
H
.160 / 4.06
.240 / 6.10
.255 / 6.48
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.180 / 4.57
.280 / 7.11
I
J
CHARACTERISTICS
MAXIMUM
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 10 mA
65
V
BVCEO
IC = 50 mA
36
V
BVEBO
IE = 10 mA
4.0
V
ICES
VCE = 36 V
hFE
VCE = 5.0 V
Cob
VCB = 12.5 V
GPE
IMD3
VCC = 26 V
POUT = 10 W (PEP)
IC = 1.25 A
10
f = 1.0 MHz
ICQ = 25 mA
f = 30 MHz
5
mA
100
--pF
100
20
21
-30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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dB
dB
REV. A
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