Filtronic FPD3000SOT89 Low noise high linearity packaged phemt Datasheet

FPD3000SOT89
Datasheet v3.0
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
PACKAGE:
FEATURES (1850MHZ):
•
•
•
•
•
•
RoHS
30 dBm Output Power (P1dB)
13 dB Small-Signal Gain (SSG)
1.3 dB Noise Figure
45 dBm Output IP3
45% Power-Added Efficiency
FPD3000SOT89E: RoHS compliant
(Directive 2002/95/EC)
9
GENERAL DESCRIPTION:
TYPICAL APPLICATIONS:
The FPD3000SOT89 is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 3000 µm Schottky barrier
Gate, defined by high-resolution stepperbased photolithography. The double recessed
Gate structure minimizes parasitics to optimize
performance, with an epitaxial structure
designed for improved linearity over a range of
bias conditions and i/p power levels.
•
•
•
Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
High intercept-point LNAs
WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 50% IDSS
29
30
dBm
Small-Signal Gain
SSG
VDS = 5 V; IDS = 50% IDSS
11.5
13
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
45
%
VDS = 5 V; IDS = 50% IDSS
1.3
dB
VDS = 5 V; IDS = 25% IDSS
0.9
POUT = P1dB
Noise Figure
Output Third-Order Intercept Point
NF
IP3
(from 15 to 5 dB below P1dB)
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
42
Matched for best IP3
45
750
930
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
1100
mA
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
1.5
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
800
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
2
20
µA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 3 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 3 mA
12
16
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 3 mA
12
16
V
Thermal Resistance
RθJC
35
°C/W
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
1
ABSOLUTE MAXIMUM RATING :
PARAMETER
SYMBOL
TEST CONDITIONS
ABSOLUTE MAXIMUM
Drain-Source Voltage
VDS
-3V < VGS < -0.5V
8V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3V
Drain-Source Current
IDS
For VDS < 2V
IDss
Gate Current
IG
Forward or reverse current
30mA
PIN
Under any acceptable bias state
600mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175°C
Storage Temperature
TSTG
Non-Operating Storage
-40°C to 150°C
Total Power Dissipation
PTOT
See De-Rating Note below
3.5W
Comp.
Under any bias conditions
5dB
RF Input Power
2
Gain Compression
Simultaneous Combination of Limits
3
2 or more Max. Limits
Notes:
1
TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause
permanent damage to the device
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
4
Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT,
where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power
Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 3.5 - (0.028W/°C) x TPACK
where TPACK= source tab lead temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 65°C carrier temperature: PTOT = 3.5W – (0.028 x (65 – 22)) = 2.3W
BIASING GUIDELINES:
•
•
•
Active bias circuits provide good performance stabilization over variations of operating
temperature, but require a larger number of components compared to self-bias or dual-biased.
Such circuits should include provisions to ensure that Gate bias is applied before Drain bias,
otherwise the pHEMT may be induced to self-oscillate
Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage
supply for depletion-mode devices.
For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of
RF gain expansion prior to the onset of compression is normal for this operating point. A Class
A/B Bias of 25% to 33% of IDSS to achieve better OIP3 performance is suggested.
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
TYPICAL TUNED RF PERFORMANCE:
Drain Efficiency and PAE
Power Transfer Characteristic
32.0
3.25
31.0
45%
40%
40%
35%
35%
30%
30%
25%
25%
2.75
Pout (dBm)
Comp Point
30.0
28.0
1.25
27.0
0.75
17.0
19.0
21.0
Eff.
15%
10%
10%
-0.25
5%
5%
-0.75
23.0
0%
24.0
15.0
20%
PAE
0.25
25.0
13.0
20%
15%
26.0
23.0
11.0
PAE (%)
1.75
Drain Efficiency (%)
2.25
29.0
Gain Compression, (dB)
Output Power (dBm)
45%
0%
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
22.0
Input Power (dBm)
Input Power (dBm)
NOTE: Typical power and efficiency is shown above. The devices were biased nominally at VDS = 5V, IDS
= 50% of IDSS, at a test frequency of 1.85 GHz. The test devices were tuned (input and output tuning) for
maximum output power at 1dB gain compression.
Typical Intermodulation performance
VDS = 5V, IDS = 50% IDSS at f = 1.85GHz
-40.00
21
-42.00
3rds (dBc)
-44.00
Output Power (dBm)
19
-46.00
-48.00
17
-50.00
-52.00
15
-54.00
3rd Order IM Products (dBc)
Pout (dBm)
-56.00
13
-58.00
11
-60.00
0.7
1.7
2.8
3.8
4.7
5.7
6.8
7.8
8.8
9.8
Inout Power (dBm)
Note: pHEMT devices have enhanced
intermodulation performance. This yields OIP3
values of about P1dB + 14 dB. This IMD
enhancement is affected by the quiescent bias
and the matching applied to the device.
35
FPD3000SOT89 5V / 50%IDSS
30
MSG
MSG
20
Mag S21
TYPICAL I-V CHARACTERISTICS:
&
S21
25
15
10
DC IV Curves FPD3000SOT89
5
Note:
The recommended method for measuring
,
or
any
particular IDS, is to set the Drain-Source
IDSS
0
voltage
(VDS) 2.5
at 1.3V.
This
measurement
0.5
1.5
3.5
4.5
5.5
6.5
7.5point
8
equency (GHz)
avoids the onset of Fr
spurious
self-oscillation which
would normally distort the current measurement
(this effect has been filtered from the I-V curves
presented above). Setting the VDS > 1.3V will
generally
cause
errors
in
the
current
measurements, even in stabilized circuits.
1.2
Drain-Source Voltage (A)
1.0
0.8
VG=-1.50V
VG=-1.25V
VG=-1.00V
VG=-0.75V
VG=-0.50V
VG=-0.25V
VG=0V
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Drain-Source Voltage (V)
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
TYPICAL OUTPUT PLANE POWER CONTOURS: (VDS = 5v, IDS = 50%IDSS)
Swp Max
143
1.
0
0.
8
0.
6
Swp Max
131
1.
0
0.
8
0.
6
2.
0
2.
0
0.4
0.
3.0
3.
24dBm
25dBm
26dBm
0.
5.
0.
2
0
0.
0. 1.
8 0
0.
6
4
28dBm
0.2
10.
27dBm
2.
0
10
.0
3. 4. 5.
0 0 0
4.0
24dBm
25dBm
26dBm
27dBm
28dBm
4.
0.
29dBm0.
2
4
0
0.
8
0.
6
5.0
10.0
1.
0
10
.0
3. 4. 5.
0
0 0
2.
0
30dBm
29dBm
-10.0
-
30dBm
-
-0.2
-5.0
-
-4.0
-3.0
-0.4
-
2.
0.
0.
2.
0
0.
6
0.
8
Swp Min
1
1.
1850 MHz
Contours swept with a constant input power,
set so that optimum P1dB is achieved at the
point of output match.
Input (Source plane) Γs:
0.70 ∠ -165.5º
0.17 - j0.12 (normalized)
8.5 – j6.0 Ω
Nominal IP3 performance is obtained with
this input plane match, and the output plane
match as shown.
Swp Min
1
1.
0
900 MHz
Contours swept with a constant input power,
set so that optimum P1dB is achieved at the
point of output match.
Input (Source plane) Γs:
0.78 ∠ -147.4º
0.13 - j0.29 (normalized)
6.5 – j14.5 Ω
Nominal IP3 performance is obtained with
this input plane match, and the output plane
match as shown.
TYPICAL SCATTERING PARAMETERS (50Ω SYSTEM):
FPD3000SOT89 5V / 50%IDSS
2.
0
10.0
10.0
1 GHz
5.0
10
.0
4. 5.
0 0
4.0
3.
0
0.6
2.
0
0
4.
5.0
0.4
1.
0
0.2
0.
8
0
0.
6
0
2 GHz
10.0
0.
4
3.
3 GHz
0.2
0
1.5 GHz
0.8
0.
4
5.0
2 GHz
7 GHz
4 GHz
4.0
2.50.2GHz
0.
2
6 GHz
5 GHz
3.0
3.0
4 GHz
0.4
3.5 GHz
3 GHz
Swp Max
8GHz
2.
0
2.0
7 GHz
1.0
6 GHz
0.8
5 GHz
6
0.
0.
6
Swp Max
8GHz
1.
0
-10.0
-10.
0
1 GHz
2
-0.
-5.0
0
-0.2
-4.0
-4
.0
0
1.
0
S22
Swp Min
0.5GHz
.0
-2
-1.0
0.
8
-0.8
S11
-0
.6
.4
-0
2.
0
-3
.
-3.0
-0.4
0.
6
-5.
0.
8
1.0
FPD3000SOT89 5V / 50%IDSS
Swp Min
0.5GHz
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
S-PARAMETERS: (BIASED @ 5V, 50%IDSS)
FREQ[GHz]
0.050
0.300
0.550
0.800
1.050
1.300
1.550
1.800
2.050
2.300
2.550
2.800
3.050
3.300
3.550
3.800
4.050
4.300
4.550
4.800
5.050
5.300
5.550
5.800
6.050
6.300
6.550
6.800
7.050
7.300
7.550
7.800
8.050
S11m
0.946
0.824
0.761
0.779
0.771
0.775
0.779
0.775
0.778
0.780
0.777
0.778
0.782
0.784
0.785
0.790
0.790
0.806
0.800
0.794
0.800
0.801
0.805
0.806
0.808
0.810
0.811
0.814
0.818
0.821
0.829
0.831
0.839
S11a
-24.3
-97.5
-132.1
-150.7
-163.6
-173.0
178.6
171.1
164.5
158.1
152.3
146.8
142.6
137.7
133.2
129.0
124.8
120.7
115.1
111.6
107.0
102.6
98.0
93.8
89.5
85.4
81.3
77.4
73.2
69.0
64.8
60.2
55.5
S21m
36.120
19.282
12.243
8.992
7.020
5.802
4.934
4.306
3.834
3.444
3.131
2.878
2.636
2.459
2.286
2.146
2.017
1.896
1.821
1.728
1.648
1.576
1.516
1.461
1.411
1.360
1.317
1.272
1.232
1.189
1.149
1.108
1.066
S21a
159.0
120.3
103.2
91.8
84.0
76.3
70.1
63.6
57.8
52.0
46.1
40.4
34.9
29.4
24.0
18.7
13.3
9.0
3.4
-1.4
-6.7
-11.5
-16.5
-21.4
-26.2
-31.2
-36.3
-41.2
-46.3
-51.3
-56.4
-61.4
-66.3
S12m
0.006
0.027
0.037
0.043
0.048
0.054
0.059
0.064
0.069
0.074
0.080
0.085
0.088
0.093
0.097
0.101
0.105
0.106
0.113
0.117
0.121
0.123
0.128
0.132
0.136
0.139
0.143
0.146
0.151
0.153
0.157
0.159
0.160
S12a
79.8
56.8
45.6
40.5
38.3
35.9
34.7
31.7
29.8
27.5
24.3
22.1
19.1
15.6
12.7
9.6
5.7
4.5
1.5
-2.0
-5.4
-8.6
-11.8
-14.7
-18.0
-21.3
-24.6
-28.2
-31.7
-35.1
-38.8
-42.5
-46.5
S22m
0.175
0.384
0.478
0.507
0.522
0.529
0.528
0.532
0.529
0.531
0.531
0.534
0.537
0.544
0.545
0.551
0.555
0.575
0.574
0.575
0.577
0.580
0.583
0.583
0.586
0.588
0.593
0.592
0.601
0.607
0.614
0.623
0.634
S22a
-145.5
-150.1
-165.4
-172.3
-179.1
176.4
171.9
167.4
163.2
158.7
154.2
149.1
143.6
138.2
132.9
127.8
123.2
118.8
113.3
109.7
105.9
102.6
98.7
95.2
91.1
86.9
82.4
77.7
73.0
68.2
63.5
59.3
55.3
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
PACKAGE OUTLINE:
(dimensions in millimeters – mm)
TAPE DIMENSIONS AND PART ORIENTATION
FWYN
● Also available with horizontal
part orientation
● Hub diameter = 80mm
● Devices per reel = 1000
6
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FPD3000SOT89
Datasheet v3.0
DEVICE FOOT PRINT:
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters, noise parameters and device
model are available on request.
RELIABILITY:
A MTTF of 4.2 million hours at a channel
temperature of 150°C is achieved for the
process used to manufacture this device.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
Units in inches
ORDERING INFORMATION:
PREFERRED ASSEMBLY INSTRUCTIONS:
This package is compatible with both lead free
and leaded solder reflow processes as defined
within IPC/JEDEC J-STD-020C. The maximum
package temperature should not exceed
260°C.
HANDLING PRECAUTIONS:
To avoid damage to
the
devices
care
should be exercised
during
handling.
Proper
Electrostatic
Discharge
(ESD)
precautions should be observed at all stages
of storage, handling, assembly, and testing.
PART
NUMBER
DESCRIPTION
FPD3000SOT89
Packaged pHEMT
FPD3000SOT89E
RoHS compliant Packaged pHEMT
FPD3000SOT89(E)-BB
0.9 GHz evaluation board
FPD3000SOT89(E)-BA
1.85 GHz evaluation board
FPD3000SOT89(E)-BC
2.0 GHz evaluation board
FPD3000SOT89(E)-BD
2.2 GHz evaluation board
FPD3000SOT89(E)-BE
2.4 GHz evaluation board
FPD3000SOT89(E)-BG
2.6 GHz evaluation board
ESD/MSL RATING:
These devices should be treated as Class 0 (0250 V) using the human body model as
defined in JEDEC Standard No. 22-A114.
The device has a MSL rating of Level 2. To
determine this rating, preconditioning was
performed to the device per, the Pb-free solder
profile defined within IPC/JEDEC J-STD-020C,
Moisture / Reflow sensitivity classification for
non-hermatic solid state surface mount
devices.
7
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
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