PHILIPS BLF7G24L-100 Power ldmos transistor Datasheet

BLF7G24L-100;
BLF7G24LS-100
Power LDMOS transistor
Rev. 4 — 22 July 2011
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation f
IDq
VDS
PL(AV)
Gp
D
ACPR885k ACPR5M
(MHz)
(mA)
(V)
(W)
(dB)
(%)
(dBc)
(dBc)
IS-95
2300 to 2400
900
28
20
18
27
46[1]
-
1 carrier W-CDMA
2300 to 2400
900
28
30
18.7
33
-
40[2]
[1]
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
[2]
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits







Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
 RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF7G24L-100 (SOT502A)
1
drain
2
gate
3
source
1
1
3
[1]
2
2
3
sym112
BLF7G24LS-100 (SOT502B)
1
drain
2
gate
3
source
1
1
3
[1]
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF7G24L-100
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
SOT502A
BLF7G24LS-100
-
earless flanged LDMOST ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
ID
drain current
-
28
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
5. Thermal characteristics
Table 5.
BLF7G24L-100_7G24LS-100
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 100 W
0.3
K/W
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
2 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
V(BR)DSS drain-source breakdown voltage
VGS = 0 V; ID = 1 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 150 mA
1.5
1.8
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
5
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
25.1 29
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
500
nA
gfs
forward transconductance
VDS = 10 V; ID = 5.35 A
-
10.5 -
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V;
ID = 5.25 A
-
0.1

-
7. Test information
Remark: All testing performed in a class-AB production test circuit.
Table 7.
Functional test information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f1 = 2300 MHz; f2 = 2400 MHz; RF performance at VDS = 28 V; IDq = 900 mA;
Tcase = 25 C; unless otherwise specified.
Symbol
Parameter
PL(AV)
average output power
Conditions
-
Min Typ Max Unit
20
-
W
Gp
power gain
17.3 18
-
dB
RLin
input return loss
-
14 -
dB
D
drain efficiency
22
27
%
ACPR885k
adjacent channel power ratio (885 kHz)
-
46 40
-
dBc
7.1 Ruggedness in class-AB operation
The BLF7G24L-100 and BLF7G24LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 900 mA; PL = 100 W (CW); f = 2300 MHz.
BLF7G24L-100_7G24LS-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
3 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
001aan495
19.5
ηD
(%)
(2)
Gp
(dB)
001aan496
50
(1)
40
(2)
(1)
18.5
30
20
17.5
10
0
16.5
0
20
40
60
80
0
20
40
60
PL (W)
VDS = 28 V; IDq = 900 mA.
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(1) f = 2300 MHz
(2) f = 2400 MHz
(2) f = 2400 MHz
Fig 1.
80
PL (W)
Single carrier IS-95 power gain as a function of
load power; typical values
001aan497
−20
Fig 2.
Single carrier IS-95 drain efficiency as a
function of load power; typical values
001aan498
−30
APCR885
(dBc)
APCR1980
(dBc)
−30
−40
(2)
−40
−50
(2)
(1)
(1)
−50
−60
−60
−70
−70
0
20
40
60
80
−80
0
20
40
PL (W)
VDS = 28 V; IDq = 900 mA.
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
(2) f = 2400 MHz
Single carrier IS-95 ACPR at 885 kHz as a
function of load power; typical values
BLF7G24L-100_7G24LS-100
Product data sheet
80
PL (W)
(1) f = 2300 MHz
Fig 3.
60
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of load power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
4 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
001aan499
12
001aan500
200
PL(M)
(W)
PAR
(dB)
(1)
160
(2)
8
120
(1)
80
4
(2)
40
0
0
0
20
40
60
80
0
20
40
PL (W)
VDS = 28 V; IDq = 900 mA.
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
(2) f = 2400 MHz
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
BLF7G24L-100_7G24LS-100
Product data sheet
80
PL (W)
(1) f = 2300 MHz
Fig 5.
60
Fig 6.
Single carrier IS-95 peak power as a function
of load power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
7.3 Pulsed CW
001aan501
19.5
ηD
(%)
(2)
Gp
(dB)
001aan502
60
50
(2)
(1)
18.5
(1)
40
30
17.5
20
10
16.5
0
40
80
120
160
0
40
80
PL (W)
VDS = 28 V; IDq = 900 mA.
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
(2) f = 2400 MHz
Pulsed CW power gain as a function of load
power; typical values
BLF7G24L-100_7G24LS-100
Product data sheet
160
PL (W)
(1) f = 2300 MHz
Fig 7.
120
Fig 8.
Pulsed CW drain efficiency as a function of
load power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
6 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
7.4 Single carrier W-CDMA
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel
bandwidth is 3.84 MHz.
001aan503
19.5
001aan504
60
ηD
(%)
Gp
(dB)
50
(2)
18.5
40
(1)
(1)
(2)
30
17.5
20
10
16.5
0
20
40
60
80
100
PL (W)
0
VDS = 28 V; IDq = 900 mA.
20
(1) f = 2300 MHz
(2) f = 2400 MHz
(2) f = 2400 MHz
Single carrier W-CDMA power gain as a
function of load power; typical values
001aan505
−10
80
100
PL (W)
Fig 10. Single carrier W-CDMA drain efficiency as a
function of load power; typical values
001aan506
−20
APCR5M
(dBc)
APCR10M
(dBc)
−20
−30
−30
60
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
Fig 9.
40
−40
(2)
(2)
(1)
−40
−50
(1)
−50
−60
−60
0
20
40
60
80
100
PL (W)
−70
VDS = 28 V; IDq = 900 mA.
0
20
(1) f = 2300 MHz
(2) f = 2400 MHz
(2) f = 2400 MHz
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
function of load power; typical values
Product data sheet
60
80
100
PL (W)
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
BLF7G24L-100_7G24LS-100
40
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
function of load power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
7 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
001aan507
8
001aan508
250
PL(M)
(W)
PAR
(dB)
200
6
(1)
(1)
150
(2)
(2)
4
100
2
50
0
0
0
20
40
60
80
100
PL (W)
0
VDS = 28 V; IDq = 900 mA.
20
(1) f = 2300 MHz
(2) f = 2400 MHz
(2) f = 2400 MHz
Fig 13. Single carrier W-CDMA peak-to-average power
ratio as a function of load power;
typical values
Product data sheet
60
80
100
PL (W)
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
BLF7G24L-100_7G24LS-100
40
Fig 14. Single carrier W-CDMA peak output power as a
function of load power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
8 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D
D1
0.045 0.785
0.035 0.745
0.210 0.133
0.170 0.123
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
Fig 15. Package outline SOT502A
BLF7G24L-100_7G24LS-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
9 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 16. Package outline SOT502B
BLF7G24L-100_7G24LS-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
10 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
9. Abbreviations
Table 8.
Abbreviations
Acronym
Description
3GPP
Third Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
IS-95
Interim Standard 95
ESD
ElectroStatic Discharge
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
N-CDMA
Narrowband Code Division Multiple Access
PAR
Peak-to-Average power Ratio
RF
Radio Frequency
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
10. Revision history
Table 9.
Revision history
Document ID
Release date Data sheet status
BLF7G24L-100_7G24LS-100 v.4 20110722
Modifications:
•
Product data sheet
Change notice Supersedes
-
BLF7G24L-100_7G24LS-100
v.3
The status of this data sheet has been changed to Product data sheet
BLF7G24L-100_7G24LS-100 v.3 20110405
Preliminary data sheet -
BLF7G24L-100_7G24LS-100
v.2
BLF7G24L-100_7G24LS-100 v.2 20100714
Objective data sheet
-
BLF7G24L-100_7G24LS-100
v.1
BLF7G24L-100_7G24LS-100 v.1 20100414
Objective data sheet
-
-
BLF7G24L-100_7G24LS-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
11 of 14
BLF7G24L-100; BLF7G24LS-100
NXP Semiconductors
Power LDMOS transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
11.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
BLF7G24L-100_7G24LS-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
12 of 14
NXP Semiconductors
BLF7G24L-100; BLF7G24LS-100
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF7G24L-100_7G24LS-100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 22 July 2011
© NXP B.V. 2011. All rights reserved.
13 of 14
NXP Semiconductors
BLF7G24L-100; BLF7G24LS-100
Power LDMOS transistor
13. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 4
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 22 July 2011
Document identifier: BLF7G24L-100_7G24LS-100
Similar pages